Patents by Inventor Hideaki Fukuda

Hideaki Fukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10395917
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: August 27, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Publication number: 20190172708
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: November 15, 2018
    Publication date: June 6, 2019
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Publication number: 20190012279
    Abstract: This computer system is configured by connecting a plurality of computers via a communication network. At least one computer among the computers has a storage device and a communication device. The communication device has: a controller that controls data transmission/reception via the communication network; and an intermediate memory that stores data transmitted/received between the storage device and other calculators on the communication network.
    Type: Application
    Filed: August 24, 2016
    Publication date: January 10, 2019
    Inventors: Sho TAKIZAWA, Hideaki FUKUDA, Kyohei IDE
  • Publication number: 20180366314
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: February 22, 2018
    Publication date: December 20, 2018
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Patent number: 10147600
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: December 4, 2018
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Publication number: 20180223429
    Abstract: A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes: providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by thermal ALD in the reaction chamber; and without breaking a vacuum, continuously depositing a second oxide film on the first oxide film by PEALD in the reaction chamber.
    Type: Application
    Filed: January 24, 2018
    Publication date: August 9, 2018
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Publication number: 20180211834
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: January 17, 2018
    Publication date: July 26, 2018
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Publication number: 20180119283
    Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.
    Type: Application
    Filed: November 1, 2016
    Publication date: May 3, 2018
    Inventors: Atsuki Fukazawa, Masaru Zaitsu, Masaki Tokunaga, Hideaki Fukuda
  • Patent number: 9905416
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: February 27, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Patent number: 9875893
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: January 23, 2018
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Publication number: 20170342559
    Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.
    Type: Application
    Filed: April 19, 2017
    Publication date: November 30, 2017
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Publication number: 20170338111
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: January 10, 2017
    Publication date: November 23, 2017
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Patent number: 9812320
    Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: November 7, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R. A. Van Aerde, Suvi Haukka, Atsuki Fukuzawa, Hideaki Fukuda
  • Patent number: 9812319
    Abstract: A method for forming a film filled in a trench of a substrate without seam or void includes: depositing a conformal SiN film in a trench of a substrate placed in a reaction space, using a halide compound as a precursor, until the trench is filled with the conformal SiN film serving as a filled film which has a seam and/or void; and then oxidizing the filled film without deposition of film to make the filled film expand until the seam and/or void of the filled film are/is diminished.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: November 7, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Publication number: 20170133216
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: January 24, 2017
    Publication date: May 11, 2017
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Patent number: 9627221
    Abstract: A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: April 18, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Masaru Zaitsu, Atsuki Fukazawa, Hideaki Fukuda
  • Publication number: 20170051405
    Abstract: A method for forming a SiN or SiCN film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducts one or more process cycles, each process cycle including: (i) feeding a precursor in a pulse to a reaction space where the substrate is place, said precursor having a Si—N—Si bond in its skeletal structure to which at least one halogen group is attached; and (ii) applying RF power to the reaction space in the presence of a reactant gas and in the absence of any precursor to form a monolayer constituting a SiN or SiCN film.
    Type: Application
    Filed: August 18, 2015
    Publication date: February 23, 2017
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Patent number: 9576790
    Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: February 21, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Viljami J. Pore, Yosuke Kimura, Kunitoshi Namba, Wataru Adachi, Hideaki Fukuda, Werner Knaepen, Dieter Pierreux, Bert Jongbloed
  • Patent number: 9564314
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: February 7, 2017
    Assignee: ASM International N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Patent number: 9564309
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: February 7, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka