Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: Provided is a superior, novel heterocyclic compound with improved solubility in oil such as sesame oil and benzyl benzoate, which has a broader treatment spectrum, causes less side effects, and is superior in tolerability and safety, and use thereof. A heterocyclic compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: Provided is a superior, novel heterocyclic compound with improved solubility in oil such as sesame oil and benzyl benzoate, which has a broader treatment spectrum, causes less side effects, and is superior in tolerability and safety, and use thereof. A heterocyclic compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.

Abstract: Provided is a superior, novel heterocyclic compound with improved solubility in oil such as sesame oil and benzyl benzoate, which has a broader treatment spectrum, causes less side effects, and is superior in tolerability and safety, and use thereof. A heterocyclic compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: A semiconductor device including a transistor formed on a first surface of a silicon layer; a first insulating film formed on the first surface of said silicon layer and covering said transistor; a wiring section formed in the first insulating film and electrically connected to the transistor; a supporting substrate formed on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; and an adjusting insulating film for adjusting a threshold voltage of said transistor, the adjusting insulating film being formed on a second surface of said silicon layer opposing the first surface of said silicon layer. Some embodiments may include a probing electrode electrically connected to the transistor and an opening in the silicon layer for exposing the probing electrode.

Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: A semiconductor device includes: a semiconductor layer; an element isolation region formed in the semiconductor layer for separation between a memory element part and a logic element part; first and second field-effect transistors formed in the memory element part and having first and second gate electrodes on a first surface side of the semiconductor layer and a second surface side opposite to the first surface, respectively, and having a source and drain region in common with each other; a third field-effect transistor formed in the logic element part and having a third gate electrode on the second surface side; and first and second insulating films formed on the semiconductor layer to cover the first field-effect transistor and the second and third field-effect transistors, respectively. The first field-effect transistor and the second field-effect transistor are fully-depleted field-effect transistors. The first gate electrode and the second gate electrode are electrically connected.

Abstract: The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

Abstract: A semiconductor device including a transistor formed on a first surface of a silicon layer; a first insulating film formed on the first surface of said silicon layer and covering said transistor; a wiring section formed in the first insulating film and electrically connected to the transistor; a supporting substrate formed on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; and an adjusting insulating film for adjusting a threshold voltage of said transistor, the adjusting insulating film being formed on a second surface of said silicon layer opposing the first surface of said silicon layer. Some embodiments may include a probing electrode electrically connected to the transistor and an opening in the silicon layer for exposing the probing electrode.

Abstract: A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.

Abstract: A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.

Abstract: A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.

Abstract: The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.