Patents by Inventor Hideaki Majima

Hideaki Majima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12081201
    Abstract: According to one embodiment, an inrush current suppression circuit includes a normally-on transistor, a normally-off transistor connected in series with the normally-on transistor, a first drive circuit that drives the normally-on transistor, a second drive circuit that drives the normally-off transistor, a diode connected between an output of the first drive circuit and an output terminal of the normally-off transistor, a first power source smoothing circuit that performs smoothing of a source current to be supplied to the first drive circuit and the second drive circuit, and a switch circuit that switches connection/disconnection of a current path passing through the first power source smoothing circuit.
    Type: Grant
    Filed: March 8, 2023
    Date of Patent: September 3, 2024
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Yuichi Sawahara, Hideaki Majima
  • Patent number: 12072368
    Abstract: According to one embodiment, a deterioration checking apparatus includes an inductor that is connected in series to a main current path of a MOS transistor to be checked, and forms a closed loop together with the MOS transistor when the MOS transistor is in an ON-state, a control circuit that controls ON/OFF of the MOS transistor, a current sensor that detects a current released from the inductor, and a calculation circuit that calculates an ON-resistance of the MOS transistor from an attenuation characteristic of a current released from the inductor when the MOS transistor is in an ON-state, and calculates a threshold voltage of the MOS transistor from an attenuation characteristic of a current released from the inductor when the MOS transistor is in an OFF-state. Therefore, it is possible to easily check a deterioration state of the MOS transistor.
    Type: Grant
    Filed: March 8, 2022
    Date of Patent: August 27, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki Majima
  • Publication number: 20240267013
    Abstract: According to one embodiment, a signal processing circuit includes a first voltage setting circuit that sets a reference voltage on an input side of an isolator, a variable gain amplifier circuit that amplifies an output signal of the isolator, a DC offset adjustment circuit that adjusts an offset of the variable gain amplifier circuit, a second voltage setting circuit that sets a reference voltage on an output side of the isolator, and a control circuit that controls the DC offset adjustment circuit in response to a result of comparison of an output voltage of the variable gain amplifier circuit with an output voltage of the second voltage setting circuit.
    Type: Application
    Filed: March 26, 2024
    Publication date: August 8, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki MAJIMA
  • Patent number: 11973477
    Abstract: According to one embodiment, a signal processing circuit includes a first voltage setting circuit that sets a reference voltage on an input side of an isolator, a variable gain amplifier circuit that amplifies an output signal of the isolator, a DC offset adjustment circuit that adjusts an offset of the variable gain amplifier circuit, a second voltage setting circuit that sets a reference voltage on an output side of the isolator, and a control circuit that controls the DC offset adjustment circuit in response to a result of comparison of an output voltage of the variable gain amplifier circuit with an output voltage of the second voltage setting circuit.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: April 30, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki Majima
  • Publication number: 20240128970
    Abstract: According to an embodiment, a transistor driver circuit includes a driving force limitation circuit and a delay-time adjustment circuit. The driving force limitation circuit operates to maintain a gate potential of a transistor to be driven at a driving force limitation potential when the transistor to be driven is driven. The driving force limitation potential corresponds to a threshold voltage of the transistor to be driven. The delay-time adjustment circuit operates to cause the gate potential to transition to the driving force limitation potential when the driving force limitation circuit is in operation.
    Type: Application
    Filed: October 17, 2023
    Publication date: April 18, 2024
    Inventor: Hideaki MAJIMA
  • Publication number: 20240106427
    Abstract: According to one embodiment, an inrush current suppression circuit includes a normally-on transistor, a normally-off transistor connected in series with the normally-on transistor, a first drive circuit that drives the normally-on transistor, a second drive circuit that drives the normally-off transistor, a diode connected between an output of the first drive circuit and an output terminal of the normally-off transistor, a first power source smoothing circuit that performs smoothing of a source current to be supplied to the first drive circuit and the second drive circuit, and a switch circuit that switches connection/disconnection of a current path passing through the first power source smoothing circuit.
    Type: Application
    Filed: March 8, 2023
    Publication date: March 28, 2024
    Inventors: Yuichi SAWAHARA, Hideaki MAJIMA
  • Publication number: 20240056071
    Abstract: A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
    Type: Application
    Filed: October 25, 2023
    Publication date: February 15, 2024
    Inventors: Yasuyuki FUJIWARA, Yiyao LIU, Yusuke SATO, Naotsugu KAKO, Hideaki MAJIMA
  • Patent number: 11838008
    Abstract: A current detection circuit includes normally-on-type and a first normally-off-type switching elements with main current paths that are connected in series, and a second normally-off-type switching element that has a source and a gate that are connected to a source and a gate of the first normally-off-type switching element and a drain that is connected to a constant current source, and executes a division process by using drain voltages of the two normally-off-type switching elements.
    Type: Grant
    Filed: December 20, 2022
    Date of Patent: December 5, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Hideaki Majima
  • Patent number: 11838013
    Abstract: A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: December 5, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Yasuyuki Fujiwara, Yiyao Liu, Yusuke Sato, Naotsugu Kako, Hideaki Majima
  • Patent number: 11686748
    Abstract: According to an embodiment, a current detecting circuit includes: a normally-OFF type second switching element that is cascode-connected to a normally-ON type first switching element that includes a drain for outputting an output current; a normally-OFF type third switching element that is connected in parallel to the second switching element and whose drain is connected to a variable current source; and a comparison circuit that outputs a detection signal in accordance with a comparison result between a drain voltage of the second switching element and a drain voltage of the third switching element.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: June 27, 2023
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki Majima
  • Patent number: 11680964
    Abstract: According to one embodiment, a current detecting circuit includes: a normally-ON type first switching element that includes a drain, a source, and a gate; a normally-OFF type second switching element including a drain that is connected to the source of the first switching element, a source that is connected to the gate of the first switching element, and a gate; and a differential amplification circuit that outputs a voltage according to a voltage between the drain and the source of the second switching element.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: June 20, 2023
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki Majima
  • Publication number: 20230123382
    Abstract: A current detection circuit includes normally-on-type and a first normally-off-type switching elements with main current paths that are connected in series, and a second normally-off-type switching element that has a source and a gate that are connected to a source and a gate of the first normally-off-type switching element and a drain that is connected to a constant current source, and executes a division process by using drain voltages of the two normally-off-type switching elements.
    Type: Application
    Filed: December 20, 2022
    Publication date: April 20, 2023
    Inventor: Hideaki Majima
  • Patent number: 11569810
    Abstract: A current detection circuit includes normally-on-type and a first normally-off-type switching elements with main current paths that are connected in series, and a second normally-off-type switching element that has a source and a gate that are connected to a source and a gate of the first normally-off-type switching element and a drain that is connected to a constant current source, and executes a division process by using drain voltages of the two normally-off-type switching elements.
    Type: Grant
    Filed: June 10, 2021
    Date of Patent: January 31, 2023
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki Majima
  • Publication number: 20220381814
    Abstract: According to one embodiment, a deterioration checking apparatus includes an inductor that is connected in series to a main current path of a MOS transistor to be checked, and forms a closed loop together with the MOS transistor when the MOS transistor is in an ON-state, a control circuit that controls ON/OFF of the MOS transistor, a current sensor that detects a current released from the inductor, and a calculation circuit that calculates an ON-resistance of the MOS transistor from an attenuation characteristic of a current released from the inductor when the MOS transistor is in an ON-state, and calculates a threshold voltage of the MOS transistor from an attenuation characteristic of a current released from the inductor when the MOS transistor is in an OFF-state. Therefore, it is possible to easily check a deterioration state of the MOS transistor.
    Type: Application
    Filed: March 8, 2022
    Publication date: December 1, 2022
    Inventor: Hideaki MAJIMA
  • Patent number: 11483001
    Abstract: According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: October 25, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Katsuyuki Ikeuchi, Hideaki Majima
  • Patent number: 11476846
    Abstract: According to one embodiment, a drive control circuit includes a first transistor that supplies a current to a gate of an output transistor in response to a drive signal, a second transistor that supplies a current to a capacitor in response to the drive signal, a comparison circuit that compares a gate voltage of the output transistor and a voltage of the capacitor, a control signal generation circuit that generates a control signal in response to an output signal of the comparison circuit and the drive signal, and a third transistor that supplies a current to a gate of the output transistor in response to the control signal.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: October 18, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Yuichi Sawahara, Hideaki Majima
  • Publication number: 20220294443
    Abstract: A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
    Type: Application
    Filed: May 31, 2022
    Publication date: September 15, 2022
    Inventors: Yasuyuki Fujiwara, Yiyao Liu, Yusuke Sato, Naotsugu Kako, Hideaki Majima
  • Publication number: 20220268819
    Abstract: According to one embodiment, a current detecting circuit includes: a normally-ON type first switching element that includes a drain, a source, and a gate; a normally-OFF type second switching element including a drain that is connected to the source of the first switching element, a source that is connected to the gate of the first switching element, and a gate; and a differential amplification circuit that outputs a voltage according to a voltage between the drain and the source of the second switching element.
    Type: Application
    Filed: May 13, 2022
    Publication date: August 25, 2022
    Inventor: Hideaki Majima
  • Patent number: 11381237
    Abstract: A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: July 5, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Yasuyuki Fujiwara, Yiyao Liu, Yusuke Sato, Naotsugu Kako, Hideaki Majima
  • Patent number: 11360126
    Abstract: According to one embodiment, a current detecting circuit includes: a normally-ON type first switching element that includes a drain, a source, and a gate; a normally-OFF type second switching element including a drain that is connected to the source of the first switching element, a source that is connected to the gate of the first switching element, and a gate; and a differential amplification circuit that outputs a voltage according to a voltage between the drain and the source of the second switching element.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: June 14, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hideaki Majima