Abstract: A head-slider. The head-slider includes a slider, and a thin-film magnetic-recording head. The thin-film magnetic-recording head includes: a read element; a write element; a non-magnetic insulating protective layer disposed around both read and write elements; a resist disposed at a position further away from an air-bearing surface than the read element; and, a hard-material member including a material selected from the group consisting of silicon carbide and tungsten, which is disposed at a position further away from the air-bearing surface than the read element and the write element. Both an end of the resist and an end of the hard-material member overlap the write element when viewed in a stacking direction. A ratio of a distance from the air-bearing surface to a deepest end of the hard-material member to a distance from the air-bearing surface to a deepest end of the resist is at least 0.9.

Abstract: A rolling bearing made of stainless steel for use in conditions where hydrofluoric acid or fluorine grease is present can prevent boundary lubrication due to the invasion of metal corrosion powder into rolling surface of the bearing, and thus prevent the rapid advance of internal wear. The rolling bearing is highly durable and has a long life even if used in metal corrosive environments. A deep-groove rolling bearing includes bearing rings (inner ring and outer ring), rolling elements, and a retainer all made of stainless steel, and solidified lubricating oil sealed in the rolling bearing. The solidified lubricating oil is made by heat curing a mixture of lubricating oil or grease containing perfluoropolyether and a thermoplastic resin. Contact seals made of fluorine rubber seal the solidified lubricating oil. Even if metal abrasion powder is produced by effect of perfluoropolyether or hydrofluoric acid, it will be held embedded in the solidified lubricating oil, so that abnormal wear will not occur.

Abstract: An apparatus for producing a multilayer sheet including a resin film, a vapor-deposited metal film and a vapor-deposited polymer film at a low cost and with excellent productivity is provided which comprises: a vacuum chamber which is made to be in a vacuum state by exhaust means; a feeding roller; a take up roller; a first to third rollers, first metal vapor deposition means for forming a first vapor-deposited metal film on one surface of a resin film at a periphery of the first roller; vapor deposition polymerization means for forming a vapor-deposited polymer film on the first vapor-deposited metal film by vapor deposition polymerization at a periphery of the second roller; and second metal vapor deposition means for forming the second vapor-deposited metal film on the other surface of the resin film at a periphery of the third roller.

Abstract: An image forming apparatus includes: a cylindrically-shaped feed portion that is fed with toner from above; a transport path including an inlet through which the toner transported from the feed portion enters and transporting the toner therethrough; and a transporting member including a rotary shaft provided to extend from the feed portion to the transport path, the rotary shaft being provided with a small-diameter portion on an upstream side thereof and a large-diameter portion on a downstream side thereof in the toner transport direction, and transports the toner along the transport path, the large-diameter portion being provided inside the transport path, the large-diameter portion having an end portion on the upstream side thereof in the toner transport direction to be connected to the small-diameter portion, the end portion being provided on a side of the feed portion of the inlet of the transport path in the toner transport direction.

Abstract: A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap width different from that of a drift region and hetero-adjoined with the drift region, a gate insulation film, a gate electrode adjoined to the gate insulation film, a source electrode connected to a source contact portion of the hetero semiconductor regions and an outermost switch structure and a repeating portion switch structure with a drain electrode connected to a substrate region. In a conduction state, the outermost switch structure comprises a mechanism in which the current flowing at the outermost switch structure becomes smaller than the current flowing at the repeating portion switch structure.

Abstract: An image forming apparatus includes: a feed portion that is fed with toner from above; a transport path that includes an inlet through which the toner fed to the feed portion enters, that allows the toner to be transported therethrough, and that is in a cylindrical shape; and a transporting member provided to continuously extend from the feed portion to the transport path, the transporting member transporting along the transport path the toner fed to the feed portion, wherein an amount of transportation of the toner per unit of time at a part of the transporting member located in the transport path is larger than an amount of transportation of the toner per unit of time at a part of the transporting member located in the feed portion.

Abstract: An image forming apparatus includes: a feed portion that is fed with toner from above; a transport path that includes an inlet through which the toner fed to the feed portion enters, that allows the toner to be transported therethrough, and that is in a cylindrical shape; and a transporting member including: a rotary shaft provided to extend in the feed portion and the transport path; and a moving portion pressing toner with rotation of the rotary shaft to move the toner, and that transports along the transport path the toner fed to the feed portion, a part of the rotary shaft of the transporting member located in the transport path having a larger diameter than a part of the rotary shaft located in the feed portion.

Abstract: A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

Abstract: The present invention provides a method of filling a powder into a powder supplying device including: a housing that accommodates the powder; a rotating member disposed rotatably within the housing; a sheet-shaped conveying member fixed to the rotating member, whose free end side region, which is different from a fixed portion, slidingly-contacts and moves along an inner wall of the housing by rotation of the rotating member to convey the powder; and a powder supply opening provided at the housing at a downstream side in a direction of conveying the powder, the method including filling, into the housing, the powder in an amount such that, at a time when usage of the powder supplying device starts, a height of the powder is greater than or equal to a height of a bottom surface of the rotating member.

Abstract: A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a result, an interrupting performance can be improved at the time of interruption, and at the same time, the generation of the hot spot where in a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thereby ensuring a long-term reliability.

Abstract: Disclosed is a cleaning apparatus including: a blade and a roller to remove the residual toner on the image carrier, the blade and the roller provided on a downstream side of a rotating direction of the image carrier than a transfer position of the toner image; a scraper to remove toner attached to the roller; and a first controlling section to control movement of the residual toner removed by the blade and the roller, the first controlling section is provided on an upstream side of the rotating direction of the image carrier than the blade and on a downstream side of the rotating direction of the image carrier than the roller and the scraper, and the first controlling section is provided facing the image carrier with a certain area provided in between to form an accumulating section to accumulate residual toner in the certain area.

Abstract: In an information processing apparatus having a plurality of functions, an information processing apparatus which is capable of executing an appropriate process to an operation by user according to the function under execution is provided.

Abstract: A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance ?1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

Abstract: A semiconductor device is provided with: a semiconductor substrate of a predetermined electroconduction type; a hetero semiconductor region contacted with a first main surface of the semiconductor substrate and comprising a semiconductor material having a bandgap different from that of the semiconductor substrate; a gate electrode formed through a gate insulator layer at a position adjacent to a junction region between the hetero semiconductor region and the semiconductor substrate; a source electrode connected to the hetero semiconductor region; and a drain electrode connected to the semiconductor substrate; wherein the hetero semiconductor region includes a contact portion contacted with the source electrode, at least a partial region of the contact portion is of the same electroconduction type as the electroconduction type of the semiconductor substrate, and the partial region has an impurity concentration higher than an impurity concentration of at least that partial region of a gate-electrode facing port

Abstract: A combined power generation unit includes a gasification unit with a gasification furnace that is used to produce fuel gas, and a gas turbine that uses the fuel gas to generate power. To produce the fuel gas required in the combined power generation unit according to a required power load, a feed-forward control of the gasification unit is performed. Also, a dead time compensator compensates for a lag and a dead time occurring while the fuel gas is fed from the gasification unit to the combined power generation unit. The gasification unit is operated using a zero flare process. The dead time compensator delays the power load required in the combined power generation unit on the basis of the lag and the dead time of the gasification unit so that the combined power generation unit is operated while a follow-up is performed with a predetermined delay.

Abstract: A semiconductor device is provided with a semiconductor region, a gate electrode, a source electrode and a drain electrode. The semiconductor region is formed on a semiconductor substrate surface and includes a first semiconductor portion of a first conducting type, a second semiconductor portion of a second conducting type, a band gap distinct from the substrate's band gap, more than two accumulated semiconductor layers, and junctions between the layers. The semiconductor layers each contain an impurity of the first conducting type. The gate electrode adjoins a heterojunction between the second semiconductor portion and the semiconductor substrate through a gate insulation film. The source electrode is coupled to the semiconductor region. The drain electrode is coupled to the semiconductor substrate.

Abstract: A powder supplier is provided. The supplier including: a non-cylindrical housing that stores a powder; a rotating member that is arranged rotatably inside the housing; a sheet-shaped conveying member that is fixed to the rotating member and has a free end side that differs from a fixed portion thereof, the sheet-shaped conveying member sweeping against inner walls of the housing due to rotation of the rotating member, and conveying the powder in an axial direction of the rotating member; a powder supply port provided in the housing at a downstream side of the direction in which the powder is conveyed; and an assisting member that is provided at a region of the conveying member opposite to the powder supply port and performs agitation of the powder and conveying of the powder to the powder supply port.

Abstract: A gasification unit provided with a gasification furnace 23 to produce fuel gas production is provided. A combined power generation unit 25 which generates power by rotating a gas turbine and a steam turbine using fuel gas produced in the gasification unit is provided. The combined power generation unit 25 is made operable while fuel change over between fuel gas and an auxiliary fuel as the fuel. A control system is provided in which the degree of opening of a control valve 37 for a flare stack 28 provided in a fuel gas feed line is controlled depending upon the pressure of the fuel gas from the gasification unit when fuel change over from the fuel gas to the auxiliary fuel so as to allow the fuel gas supplied to the combined power generation unit 25 to gradually flare from a flare stack 28 until a flared status that total amount of the fuel gas is reached.

Abstract: A method for producing a semiconductor device includes forming a first hetero-semiconductor layer as a hetero-junction to a surface of a silicon carbide epitaxial layer. This layer is composed of polycrystalline silicon having a band gap different from that of the silicon carbide epitaxial layer. An etching stopper layer composed of a material having a different etching rate from that of the polycrystalline silicon is formed on the surface of the first hetero-semiconductor layer. A second hetero-semiconductor layer composed of polycrystalline silicon is formed so that the second hetero-semiconductor layer contacts the surface of the first hetero-semiconductor layer and the etching stopper layer. The etching stopper layer is removed, the first hetero-semiconductor layer is thermally oxidized, and the thermally oxidized portion is then removed.

Abstract: Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heterojunction region other than outer peripheral ends of the heterojunction diode is a breakdown voltage of a semiconductor device.