Abstract: A comparator includes a differential pair circuit comprising NMOS transistors, the differential pair circuit configured to output a signal corresponding to a difference between first and second input signals supplied thereto, and an input circuit configured to raise a voltage level of the first input signal supplied to the differential pair circuit when the voltage of the first input signal is less than a predetermined threshold value.

Abstract: A comparator includes a differential pair circuit comprising NMOS transistors, the differential pair circuit configured to output a signal corresponding to a difference between first and second input signals supplied thereto, and an input circuit configured to raise a voltage level of the first input signal supplied to the differential pair circuit when the voltage of the first input signal is less than a predetermined threshold value.

Abstract: Lactobacillus screening methods were carried out using surface plasmon resonance spectrums and human intestinal mucin and blood group antigens as probes. A trial to set selection criteria in the above-mentioned methods of screening for lactobacilli was made to adapt the methods to mass screening, and it was discovered that lactobacilli compatible with ABO blood groups can be screened by setting 100 RU as a criterion for judging bacterial binding under certain conditions. Using 238 lactobacillus strains, the above-mentioned screening methods and tests to judge their compatibility for the use of yogurt production were carried out, to at long last specifically discover bacillus strains compatible with blood groups A, B, and O.

Abstract: Lactobacillus screening methods were carried out using surface plasmon resonance spectrums and human intestinal mucin and blood group antigens as probes. A trial to set selection criteria in the above-mentioned methods of screening for lactobacilli was made to adapt the methods to mass screening, and it was discovered that lactobacilli compatible with ABO blood groups can be screened by setting 100 RU as a criterion for judging bacterial binding under certain conditions. Using 238 lactobacillus strains, the above-mentioned screening methods and tests to judge their compatibility for the use of yogurt production were carried out, to at long last specifically discover bacillus strains compatible with blood groups A, B, and O.

Abstract: Lactobacillus screening methods were carried out using surface plasmon resonance spectrums and human intestinal mucin and blood group antigens as probes. A trial to set selection criteria in the above-mentioned methods of screening for lactobacilli was made to adapt the methods to mass screening, and it was discovered that lactobacilli compatible with ABO blood groups can be screened by setting 100 RU as a criterion for judging bacterial binding under certain conditions. Using 238 lactobacillus strains, the above-mentioned screening methods and tests to judge their compatibility for the use of yogurt production were carried out, to at long last specifically discover bacillus strains compatible with blood groups A, B, and O.

Abstract: The survival of lactic acid bacterial strains such as probiotic bacteria contained in yogurt etc. is improved. A lactic acid bacterium survival improver including a propionic acid bacterium fermentation product to improve the survival of a lactic acid bacterium. The propionic acid bacterium is a bacterium belonging to the genus Propionibacterium. The bacterium belonging to the genus Propionibacterium is Propionibacterium freudenreichii.

Abstract: Lactobacillus screening methods were carried out using surface plasmon resonance spectrums and human intestinal mucin and blood group antigens as probes. A trial to set selection criteria in the above-mentioned methods of screening for lactobacilli was made to adapt the methods to mass screening, and it was discovered that lactobacilli compatible with ABO blood groups can be screened by setting 100 RU as a criterion for judging bacterial binding under certain conditions. Using 238 lactobacillus strains, the above-mentioned screening methods and tests to judge their compatibility for the use of yogurt production were carried out, to at long last specifically discover bacillus strains compatible with blood groups A, B, and O.

Abstract: A water-soluble inorganic composition obtained by reacting an inorganic dissolution promoter with at least one solute selected from the group consisting of metal silicon, boric acid, and borax at a ratio of the inorganic dissolution promoter to the solute of 1:10 to 1:100 by weight, wherein the inorganic dissolution promoter is obtained by mixing in water (A) at least one compound selected from the group consisting of an alkali metal fluoride, an alkali metal phosphite, an alkali metal sulfite, an Alkali metal nitrite, sulfurous acid, nitrous acid, and phosphorous acid, alkali metal phosphate, alkali metal nitrate, alkali metal sulfate, phosphoric acid, nitric acid, sulfuric acid and (B) at least one alkali metal hydroxide at a ratio of (A):(B) of 1:9 to 4:1 by weight; a plasticized substance; and a foamed inorganic substance are provided.

Abstract: The invention provides an inorganic dissolution accelerator used for obtaining a water-soluble inorganic compound(s), high in concentration and containing a large solid content, which accelerator is prepared by making one or more compounds selected from fluorides, mineral acids, mineral “ous” acids and salts thereof, and boric acid compounds, all either natural or synthetic, coexist with an alkali metal and/or substance containing an alkaline metal, and is able to transform metals and inorganic substances present in water, either natural or synthetic, containing as the main component silicon Si, aluminum Al, and/or boron B, into amorphous highly water-soluble inorganic compounds having the solubilities equal to, or larger than those well known in the art.

Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.

Abstract: An aqueous film forming inorganic composition which is prepared by reacting metallic silicon and an alkali metal hydroxide in an aqueous solvent in the presence of at least one compound selected from the group consisting of a fluoride and sulfurous acid, nitrous acid, phosphorous acid and a salt of the acid, characterized in that it has a pH value of 10 to 13 at 20° C. and comprises colloidal particles of the product of the above reaction having various, that is, relatively large, medium and relatively small particle diameters; an inorganic foam prepared by heating the composition to 150° C. or higher; and methods for preparing the composition and the foam. The aqueous film forming inorganic composition can be suitably used for preparing an inorganic foam and a thermally insulating composite material which are excellent in thermal insulation, and is not pollutant to the environment and can be recycled in the environment.

Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.

Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.

Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.

Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.

Abstract: A power supply applies a power-supply voltage VDD to operate an LCD driver circuit. A booster circuit increases the power-supply voltage VDD, generating an LCD-driving voltage VLDC. When the power-supply voltage VDD is equal to or higher than a predetermined voltage, a power-supply voltage detecting circuit outputs the LCD-driving voltage VLCD to a switch circuit. The switch circuit disconnects the line for applying the voltage VLCD, from the line for applying a reference voltage GND. When the power-supply voltage VDD is lower than the predetermined voltage, the power-supply voltage detecting circuit outputs an indefinite voltage to the switch circuit. In this case, the switch circuit short-circuits the line for applying the voltage VLCD, to the line for applying the reference voltage GND. This prevents undesired phenomena, such as flickering, from occurring on the screen of the liquid crystal display, even if the application of power-supply voltage VDD is interrupted.

Abstract: A semiconductor device which includes at least one of (1) an input buffer circuit formed of an input level converter and a non-inverting buffer circuit and an inverting buffer circuit each including BiCMOS circuitry which effects high-speed operation; (2) a decoder circuit formed of plural logic gates each of which is composed of the combination of MOS and bipolar circuitry; (3) a sense amplifier circuit including a multiemitter transistor; (4) a signal or address transition detector circuit which includes input circuits each receiving, for example, an address signal of a voltage amplitude and outputting a current amplitude signal in response to a change in level of the address signal, and a detector circuit connected thereto which has a cascode amplifier arranged such that it receives current amplitude signals at an input thereof and in which the cascode amplifier input is maintained at a substantially constant voltage, in which the detection circuit detects a transition of one or more of the current amplitu

Abstract: In a method for producing a toner for electrostatic development, a mixture of starting toner materials comprising at least a resin and a colorant is kneaded, extruded and cooled to obtain a toner material. The toner material is crushed and then pulverized by an impact pulverizer having a pulverizing section formed by disposing a stator having ridges of a triangular waveform at an inner surface thereof and a rotor having ridges of a triangular waveform at an outer surface thereof at a gap between the ridges of the stator and of the rotor.

Abstract: A semiconductor memory device which includes at least one of (1) an input buffer circuit which generates internal address signals in response to an incoming address; (2) a decoder circuit formed of plural logic gates each of which is composed of the combination of MOS and bipolar circuitry; (3) a sense amplifier circuit including a multiemitter transistor; (4) a signal or address transition detector circuit which includes input circuits each receiving, for example, an address signal of a voltage amplitude and outputting a current amplitude signal in response to a change in level of the address signal, and a detector circuit connected thereto which has a cascode amplifier arranged such that it receives current amplitude signals at an input thereof and in which the cascode amplifier input is maintained at a substantially constant voltage, in which the detection circuit detects a transition of one or more of the current amplitude signals and, in response thereto, generates an ATD signal of a voltage amplitude; a

Abstract: A voltage transforming circuit comprises a constant-voltage regulator circuit for receiving a first voltage from a first voltage source and outputting a second voltage having the same polarity as the first voltage and a predetermined absolute value lower than the same, a step-up circuit, having a plurality of output terminals, for receiving the second voltage and a first synchronization signal, the step-up circuit stepping up the absolute value of the second voltage and controlling the operation of charging capacitors, thereby outputting from the output terminals a plurality of stepped-up voltages of the same polarity having absolute values higher than the second voltage, a level shifter circuit for receiving a second synchronization signal which uses the first voltage as one of logic levels, and receiving that one of the stepped-up voltages which has a highest absolute value higher than that of the first voltage, the level shifter circuit shifting the voltage of the one of logic levels to the highest absolut