Abstract: A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.

Abstract: A carborane supercluster consisting of carborane (C2B10H12) as its constituent unit expressed as a molecular formula C2mB10mH12m-x, where x is a positive integer (i.e., x=1, 2, 3, . . . ) and m is an integer greater than unity (i.e., m=2, 3, . . . ). The parameter x represents the count of removed or detached hydrogen atoms. The parameter a represents the count of the clusters linked together. To produce the supercluster, carborane (C2B10H12) is ionized in a reaction chamber to generate carborane ions and then, the carborane ions thus generated are successively reacted with the remaining neutral (i.e., non-ionized) carborane (C2B10H12), thereby generating the carborane supercluster. Preferably, the cluster of the carborane consists of at least two of o-carborane, m-carborane, and p-carborane.

Abstract: A graphite having geometrically shaped holes limited to the top atomic layer such as circles, polygons and combinations thereof, and a method of preparing a graphite having geometrically shaped holes such as circles, polygons and combinations thereof where the geometrically shaped holes are limited to the top atomic layer.

Abstract: A carborane supercluster consisting of carborane (C2B10H12) as its constituent unit expressed as a molecular formula C2mB10mH12m-x, where x is a positive integer (i.e., x=1, 2, 3, . . . ) and m is an integer greater than unity (i.e., m=2, 3, . . . ). The parameter x represents the count of removed or detached hydrogen atoms. The parameter a represents the count of the clusters linked together. To produce the supercluster, carborane (C2B10H12) is ionized in a reaction chamber to generate carborane ions and then, the carborane ions thus generated are successively reacted with the remaining neutral (i.e., non-ionized) carborane (C2B10H12), thereby generating the carborane supercluster. Preferably, the cluster of the carborane consists of at least two of o-carborane, m-carborane, and p-carborane.

Abstract: A graphite having geometrically shaped holes limited to the top atomic layer such as circles, polygons and combinations thereof, and a method of preparing a graphite having geometrically shaped holes such as circles, polygons and combinations thereof where the geometrically shaped holes are limited to the top atomic layer.

Abstract: A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure.

Abstract: Disclosed is a process for purifying carbon nanotubes which has steps of 1) mixing carbon nanotubes which accompany carbon impurities with a reagent selected from a group consisting of oxidation agents, nitration agents and sulfonation agents in liquid phase, 2) reacting the carbon nanotubes with the reagent at a predetermined temperature in the liquid phase, wherein the carbon impurities except carbon nanotubes are selectively reacted to dissolve in the liquid phase, and 3) separating carbon nanotubes from which the impurities were released from the liquid phase then washing and drying it. A process for uncapping carbon nanotubes and a process for chemically modifying carbon nanotubes are also disclosed.

Abstract: A mixture of carbon nanotubes and impurity carbon materials, which include carbon nanoparticles and may possibly include amorphous carbon, is purified into carbon nanotubes of high purity by utilizing a significant difference in oxidizability between the nanotubes and the nanoparticles. The mixture is pulverized and heated in the presence of an oxidizing agent at a temperature in the range from 600.degree. to 1000.degree. C. until the impurity carbon materials are oxidized and dissipated into gas phase. The nanotubes remain almost unoxidized except for loss of some lengths from the tube tips. It is suitable to perform the heating in air or oxygen.

Abstract: A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure.