Patents by Inventor Hidefumi Yasuda
Hidefumi Yasuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160118541Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.Type: ApplicationFiled: January 4, 2016Publication date: April 28, 2016Inventors: Yuko KATO, Hidefumi YASUDA
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Publication number: 20150048410Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.Type: ApplicationFiled: September 2, 2014Publication date: February 19, 2015Inventors: Yuko KATO, Hidefumi YASUDA
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Patent number: 8957434Abstract: According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer and a second insulating layer. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided on the second surface in a region including the light emitting layer. The n-side electrode is provided on the second surface in a region not including the light emitting layer. The p-side interconnect layer includes a p-side external terminal exposed from the second insulating layer at a third surface having a plane orientation different from a plane orientation of the first surface and a plane orientation of the second surface. The n-side interconnect layer includes an n-side external terminal exposed from the second insulating layer at the third surface.Type: GrantFiled: July 12, 2013Date of Patent: February 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Sugizaki, Akihiro Kojima, Yosuke Akimoto, Hidefumi Yasuda, Nozomu Takahashi, Kazuhito Higuchi, Susumu Obata, Hideo Tamura
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Patent number: 8890201Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.Type: GrantFiled: September 10, 2010Date of Patent: November 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yuko Kato, Hidefumi Yasuda
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Patent number: 8659040Abstract: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.Type: GrantFiled: April 5, 2012Date of Patent: February 25, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Akira Fujimoto, Ryota Kitagawa, Koji Asakawa, Hidefumi Yasuda, Yasuhiko Akaike, Takeyuki Suzuki
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Publication number: 20130299864Abstract: According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer and a second insulating layer. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided on the second surface in a region including the light emitting layer. The n-side electrode is provided on the second surface in a region not including the light emitting layer. The p-side interconnect layer includes a p-side external terminal exposed from the second insulating layer at a third surface having a plane orientation different from a plane orientation of the first surface and a plane orientation of the second surface. The n-side interconnect layer includes an n-side external terminal exposed from the second insulating layer at the third surface.Type: ApplicationFiled: July 12, 2013Publication date: November 14, 2013Inventors: Yoshiaki SUGIZAKI, Akihiro Kojima, Yosuke Akimoto, Hidefumi Yasuda, Nozomu Takahashi, Kazuhito Higuchi, Susumu Obata, Hideo Tamura
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Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
Patent number: 8546178Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.Type: GrantFiled: July 12, 2011Date of Patent: October 1, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Tomoko Morioka, Takayoshi Fujii, Toshitake Kitagawa, Kazufumi Shiozawa, Taisuke Sato, Hidefumi Yasuda, Yuko Kato -
Publication number: 20130248907Abstract: A semiconductor light-emitting device is provided with a semiconductor layer including a first surface, a second surface opposite to the first surface, a luminous layer, and a first electrode formed on the first surface. The first surface has flat and rough portions. The first electrode has a pad and a fine wire electrode that is narrower than the pad. The fine wire electrode is formed on the flat portions but not on the rough portions. One or more metal contacts are disposed on the second surface to be under the rough portions.Type: ApplicationFiled: March 4, 2013Publication date: September 26, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuko KATO, Hidefumi YASUDA
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Patent number: 8426878Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.Type: GrantFiled: June 25, 2012Date of Patent: April 23, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hidefumi Yasuda, Yuko Kato, Yasuharu Sugawara, Toshiyuki Terada, Kazuyoshi Furukawa
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Patent number: 8357557Abstract: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.Type: GrantFiled: March 4, 2010Date of Patent: January 22, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Akira Fujimoto, Ryota Kitagawa, Koji Asakawa, Hidefumi Yasuda, Yasuhiko Akaike, Takeyuki Suzuki
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Publication number: 20120261707Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.Type: ApplicationFiled: June 25, 2012Publication date: October 18, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Hidefumi Yasuda, Yuko Kato, Yasuharu Sugawara, Toshiyuki Terada, Kazuyoshi Furukawa
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Patent number: 8237183Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.Type: GrantFiled: August 14, 2008Date of Patent: August 7, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hidefumi Yasuda, Yuko Kato, Yasuharu Sugawara, Toshiyuki Terada, Kazuyoshi Furukawa
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Publication number: 20120187414Abstract: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.Type: ApplicationFiled: April 5, 2012Publication date: July 26, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Akira Fujimoto, Ryota Kitagawa, Koji Asakawa, Hidefumi Yasuda, Yasuhiko Akaike, Takeyuki Suzuki
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Publication number: 20120100695Abstract: A manufacturing method of a semiconductor device according to one embodiment includes attaching a front-side protecting member to a first main surface of a semiconductor wafer having an element region formed therein; laser-dicing the semiconductor wafer by applying a laser beam from a second main surface opposite to the first main surface of the semiconductor wafer; forming a backside metal film on the second main surface of the semiconductor wafer; and pressing a spherical surface against the front-side protecting member to expand the front-side protecting member and form individually divided semiconductor chips having the backside metal film attached thereto.Type: ApplicationFiled: September 30, 2011Publication date: April 26, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: YASUHARU SUGAWARA, HIDEFUMI YASUDA, SHUJI ITONAGA
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Publication number: 20120070958Abstract: In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.Type: ApplicationFiled: September 21, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuyoshi Furukawa, Yoshinori Natsume, Yasuhiko Akaike, Shinji Nunotani, Wakana Nishiwaki, Masaaki Ogawa, Toru Kita, Hidefumi Yasuda
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SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
Publication number: 20120012874Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.Type: ApplicationFiled: July 12, 2011Publication date: January 19, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Tomoko MORIOKA, Takayoshi Fujii, Toshitake Kitagawa, Kazufumi Shiozawa, Taisuke Sato, Hidefumi Yasuda, Yuko Kato -
Publication number: 20110227121Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.Type: ApplicationFiled: September 10, 2010Publication date: September 22, 2011Inventors: Yuko KATO, Hidefumi Yasuda
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Publication number: 20110215294Abstract: According to one embodiment, a semiconductor light emitting device, including a light emission portion including a first semiconductor layer with a first conductive type, a light emission layer on the first semiconductor layer, a second semiconductor layer with a second conductive type on the light emission layer and a transparent electrode on the second semiconductor layer, and a plurality of light outlet holes inside the light emission portion, the plurality of light outlet holes communicating with the first semiconductor layer from a surface side of the transparent electrode, at least a part of light emitted from the light emission layer being extracted from the plurality of the outlet holes to outside.Type: ApplicationFiled: February 11, 2011Publication date: September 8, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Takeyuki SUZUKI, Hidefumi YASUDA, Yuko KATO
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Publication number: 20100221856Abstract: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.Type: ApplicationFiled: March 4, 2010Publication date: September 2, 2010Inventors: Akira Fujimoto, Ryota Kitagawa, Koji Asakawa, Hidefumi Yasuda, Yasuhiko Akaike, Takeyuki Suzuki
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Patent number: 7511306Abstract: A semiconductor light emitting device includes: a semiconductor laminated body including a light emitting layer and having a light extraction surface for light emitted from the light emitting layer, a conductive film provided on the light extraction surface of the semiconductor laminated body and being translucent to the light emitted from the light emitting layer and an electrode provided above the conductive film. The conductive film has at least two levels of thickness.Type: GrantFiled: January 31, 2006Date of Patent: March 31, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Yuko Kato, Hidefumi Yasuda