Abstract: A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Abstract: A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the

Abstract: A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the

Abstract: A semiconductor light emitting device comprises: a semiconductor laminated body including a light emitting layer and having a light extraction surface for light emitted from the light emitting layer, a conductive film provided on the light extraction surface of the semiconductor laminated body and being translucent to the light emitted from the light emitting layer and an electrode provided above the conductive film. The conductive film has at least two levels of thickness.

Abstract: A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

Abstract: A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.

Abstract: A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.

Abstract: A semiconductor device having an inter-layer insulation film that allows a refractory metal to be easily etched and that well covers high side walls of a gold plate and a fabrication method thereof are disclosed.