Abstract: To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step.

Abstract: A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber (6) with care or elaboration. A ruthenium raw gas feed pipe (4) and an oxygen-containing gas feed pipe (5) are merged with each other at a location upstream of a gas mixing chamber (6), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O2), ozone (O3), etc.) are mixed with each other prior to entering the gas mixing chamber (6).

Abstract: When films of Ru(C2H5C5H4)2 are formed on a substrate by means of a thermal CVD method, the films are also deposited on members around the substrate, resulting in the formation of particles on the substrate and hence a reduction in the manufacturing yield. Thus, it is necessary to clean the interior of the reaction chamber, but in a conventional cleaning process, a cleaning time is long and hence manufacturing efficiency is low, increasing manufacturing costs. To improve these, a method of manufacturing semiconductor devices according to the present invention includes: a deposition process for forming a film containing Ru on a substrate in a reaction chamber; and a cleaning process for supplying a ClF3 gas to the reaction chamber so as to remove films, which were deposited on an inner surface of the reaction chamber in the deposition process, through thermochemical reactions.

Abstract: A semiconductor manufacturing method and apparatus having an excellent step coverage and capable of manufacturing semiconductor devices at low cost. The apparatus includes a reaction chamber 4 adapted to accommodate a substrate 1, a gas feed port through which a raw material gas is supplied to the reaction chamber for forming ruthenium films or ruthenium oxide films on the substrate, and a gas exhaust port through which the raw material gas is exhausted from the reaction chamber.

Abstract: A method for manufacturing a semiconductor device and a method for processing a substrate are provided in which films containing Ru can be easily fabricated with good step coverage, reduced deposition delay times and hence good in-plane uniformity. The films containing Ru are deposited on a substrate by using a gas vaporized from Ru[CH3COCHCO(CH2)3CH3]3 and an oxygen-containing gas at a deposition temperature of 250° C. to 305° C. and at a partial pressure of the oxygen-containing gas of 6.9 Pa or less.

Abstract: A semiconductor manufacturing method and a semiconductor manufacturing apparatus are capable of manufacturing semiconductor devices with excellent step coverage and high throughput and at low cost. A substrate (1) is arranged in a thermal CVD apparatus which includes a reaction chamber (5), a gas supply port (7) through which ruthenium precursor gases for depositing ruthenium films or ruthenium oxide films on a substrate (1) are supplied to the reaction chamber (5), and a gas exhaust port 8 through which the precursor gases are exhausted from the reaction chamber (5). A first ruthenium precursor gas is caused to flow from the gas supply port (7) toward the substrate (1) so that a first ruthenium film or a first ruthenium oxide film is deposited on the substrate (1).

Abstract: When films of Ru(C2H5C5H4)2 are formed on a substrate by means of a thermal CVD method, the films are also deposited on members around the substrate, resulting in the formation of particles on the substrate and hence a reduction in the manufacturing yield. Thus, it is necessary to clean the interior of the reaction chamber, but in a conventional cleaning process, a cleaning time is long and hence manufacturing efficiency is low, increasing manufacturing costs. To improve these, a method of manufacturing semiconductor devices according to the present invention includes: a deposition process for forming a film containing Ru on a substrate in a reaction chamber; and a cleaning process for supplying a CIF3 gas to the reaction chamber so as to remove films, which were deposited on an inner surface of the reaction chamber in the deposition process, through thermochemical reactions.

Abstract: A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber (6) with care or elaboration. A ruthenium raw gas feed pipe (4) and an oxygen-containing gas feed pipe (5) are merged with each other at a location upstream of a gas mixing chamber (6), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O2), ozone (O3), etc.) are mixed with each other prior to entering the gas mixing chamber (6).

Abstract: A method of manufacturing a semiconductor device for use with a single wafer type reduced pressure CVD apparatus having a heat processing chamber 1 and a wafer carrier 2 arranged in the heat processing chamber 1 and including a plurality of upper and lower stages, in which wafers W are mounted on respective stages of the wafer carrier 2, and are subjected to film formations process while they are being heated. When wafers W are introduced into the heat processing chamber 1 previously heated to a desired heat processing temperature, wafers W to be mounted on stages except for at least the lowermost stage of the wafer carrier 2 are left in the heat processing chamber 1 until central portions of the wafers W are heated to the vicinity of the temperature within the heat processing chamber 1, without immediately mounting them on the respective stages. Thereafter, the wafers W are mounted on the predetermined stages of the wafer carrier 2 for carrying out the film formation processing.

Abstract: A semiconductor manufacturing method and apparatus having an excellent step coverage and capable of manufacturing semiconductor devices at low cost. The apparatus includes a reaction chamber 4 adapted to accommodate a substrate 1, a gas feed port through which a raw material gas is supplied to the reaction chamber for forming ruthenium films or ruthenium oxide films on the substrate, and a gas exhaust port through which the raw material gas is exhausted from the reaction chamber.

Abstract: A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (51) which has gas feed ports (52, 53) and gas exhaust ports (54, 55). The substrate in the reaction tube (51) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (51) through the gas feed ports (52, 53) and exhausting the prescribed gas from the reaction tube (51) through all the exhaust ports (54, 55). A film-forming gas is supplied to the reaction tube (51) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (51). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (51) from the gas feed ports (52, 53) while being exhausted from the reaction tube (51) through all the exhaust ports (54, 55), thereby removing a residual gas in the reaction tube.

Abstract: A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (51) which has gas feed ports (52, 53) and gas exhaust ports (54, 55). The substrate in the reaction tube (51) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (51) through the gas feed ports (52, 53) and exhausting the prescribed gas from the reaction tube (51) through all the exhaust ports (54, 55). A film-forming gas is supplied to the reaction tube (51) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (51). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (51) from the gas feed ports (52, 53) while being exhausted from the reaction tube (51) through all the exhaust ports (54, 55), thereby removing a residual gas in the reaction tube.