Patents by Inventor Hideharu Nobutoki

Hideharu Nobutoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200392390
    Abstract: Provided is a heat storage material, consisting of a thermo-sensitive polymer gel formed of a thermo-sensitive polymer and a solvent selected from the group consisting of water, an organic solvent, and a mixture thereof, wherein the hydrophilicity and hydrophobicity of the heat storage material reversibly change to each other across the lower critical solution temperature thereof, and in the process of the change, the solvent in the thermo-sensitive polymer gel maintains a liquid state.
    Type: Application
    Filed: March 26, 2019
    Publication date: December 17, 2020
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Hideharu NOBUTOKI
  • Patent number: 8846148
    Abstract: A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: September 30, 2014
    Assignee: Nippon Shokubai Co., Ltd.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
  • Patent number: 8674046
    Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: March 18, 2014
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hideharu Nobutoki, Teruhiko Kumada, Toshiyuki Toyoshima, Naoki Yasuda, Suguru Nagae
  • Publication number: 20130160711
    Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.
    Type: Application
    Filed: February 21, 2013
    Publication date: June 27, 2013
    Inventors: Teruhiko KUMADA, Hideharu Nobutoki, Naoki Yasuda
  • Patent number: 8404314
    Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: March 26, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda
  • Patent number: 8288294
    Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.
    Type: Grant
    Filed: June 25, 2009
    Date of Patent: October 16, 2012
    Assignees: Mitsubishi Heavy Industries, Ltd., Mitsubishi Electric Corporation
    Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
  • Publication number: 20110266660
    Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.
    Type: Application
    Filed: June 25, 2009
    Publication date: November 3, 2011
    Applicants: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
  • Patent number: 7981790
    Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: July 19, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Kinya Goto, Masazumi Matsuura
  • Patent number: 7824784
    Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
    Type: Grant
    Filed: December 3, 2008
    Date of Patent: November 2, 2010
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Nippon Shokubai Co., Ltd.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Tetsuya Yamamoto, Takuya Kamiyama
  • Publication number: 20100181654
    Abstract: An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film.
    Type: Application
    Filed: June 13, 2009
    Publication date: July 22, 2010
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Toshihito Fujiwara, Toshihiko Nishimori, Toshiya Watanabe, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Chiho Mizushima, Takuya Kamiyama, Tetsuya Yamamoto
  • Publication number: 20100164072
    Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.
    Type: Application
    Filed: March 23, 2007
    Publication date: July 1, 2010
    Applicant: Mitsubishi Electric Corporation
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda
  • Publication number: 20100112805
    Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
    Type: Application
    Filed: January 7, 2010
    Publication date: May 6, 2010
    Applicant: Renesas Technology Corp.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Kinya Goto, Masazumi Matsuura
  • Patent number: 7671473
    Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
    Type: Grant
    Filed: June 14, 2006
    Date of Patent: March 2, 2010
    Assignee: Renesas Technology Corp.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Kinya Goto, Masazumi Matsuura
  • Publication number: 20100004425
    Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.
    Type: Application
    Filed: September 14, 2009
    Publication date: January 7, 2010
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Hideharu Nobutoki, Teruhiko Kumada, Toshiyuki Toyoshima, Naoki Yasuda, Suguru Nagae
  • Publication number: 20090232987
    Abstract: The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. By using the composition, physical properties such as low dielectric constant property and mechanical strength of the thin film produced from a borazine-ring-containing compound can be improved.
    Type: Application
    Filed: November 15, 2006
    Publication date: September 17, 2009
    Applicant: NIPPON SHOKUBAI CO., LTD.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
  • Publication number: 20090090274
    Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
    Type: Application
    Filed: December 3, 2008
    Publication date: April 9, 2009
    Inventors: Teruhiko KUMADA, Hideharu Nobutoki, Tetsuya Yamamoto, Takuya Kamiyama
  • Publication number: 20080038585
    Abstract: The present invention provides a method of manufacturing a film including the steps of using a compound with borazine skeleton (preferably a compound expressed by a chemical formula (1) below (where R1-R6 may be identical with or different from each other, and are each independently selected from a group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having a carbon number of 1-4, on condition that at least one of R1-R6 is not the hydrogen atom)) as a raw material, and forming the film on a substrate by using a chemical vapor deposition method, characterized in that a negative charge is applied to a site for placing the substrate, and a semiconductor device utilizing a film manufactured by the method.
    Type: Application
    Filed: October 7, 2005
    Publication date: February 14, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Teruhiko Kumada, Naoki Yasuda, Hideharu Nobutoki, Norihisa Matsumoto, Shigeru Matsuno
  • Publication number: 20080029027
    Abstract: The present invention provides a plasma CVD device including means for supplying a compound with borazine skeleton, a plasma generator for generating a plasma, and means for applying a negative charge to an electrode for placing a substrate. According to the present invention, it is possible to provide a plasma CVD device which stably provides a low dielectric constant and a high mechanical strength over a long period of time, reducing the amount of a gas component (outgas) emitted in heating the film, and causing no trouble in a device manufacturing process.
    Type: Application
    Filed: October 7, 2005
    Publication date: February 7, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Teruhiko Kumada, Naoki Yasuda, Hideharu Nobutoki, Norihisa Matsumoto, Shigeru Matsuno
  • Patent number: 7192540
    Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: March 20, 2007
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Patent number: 7175718
    Abstract: A material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density. 28 to 35% by weight of at least one rare earth element selected from the group consisting of neodymium, praseodymium, dysprosium, terbium, and holmium, 0.9 to 1.3% by weight of boron, 0.25 to 3% by weight of phosphorus, iron, and inevitable impurities. It can further comprise 0.1 to 3.6% by weight of cobalt and 0.02 to 0.25% by weight of copper.
    Type: Grant
    Filed: June 19, 2001
    Date of Patent: February 13, 2007
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hideharu Nobutoki, Suguru Nagae, Satoru Hayasi