Patents by Inventor Hideharu Nobutoki
Hideharu Nobutoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11814567Abstract: Provided is a heat storage material, consisting of a thermo-sensitive polymer gel formed of a thermo-sensitive polymer and a solvent selected from the group consisting of water, an organic solvent, and a mixture thereof, wherein the hydrophilicity and hydrophobicity of the heat storage material reversibly change to each other across the lower critical solution temperature thereof, and in the process of the change, the solvent in the thermo-sensitive polymer gel maintains a liquid state.Type: GrantFiled: March 26, 2019Date of Patent: November 14, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventor: Hideharu Nobutoki
-
Patent number: 11448471Abstract: A heat storage unit includes: a heat storage material that contains water and high polymers that exhibit hydrophilicity or hydrophobicity depending on a temperature; a heat exchanger that causes heat exchange to be performed between a heating fluid and the heat storage material to heat the heat storage material and store heat in the heat storage material, and causes heat exchange to be performed between a heat utilization fluid and the heat storage material to receive heat from the heat storage material and cause heat to be transferred from the heat storage material; and a container that is filled with the heat storage material and houses the heat exchanger.Type: GrantFiled: June 18, 2018Date of Patent: September 20, 2022Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Yasumitsu Nomura, Shigetoshi Ipposhi, Shunkei Suzuki, Junichi Nakazono, Hideharu Nobutoki
-
Publication number: 20220259475Abstract: A heat storage apparatus includes: a container sealed, with a heat storage material encased in the container, the above material including a thermosensitive polymer gel including a thermosensitive polymer and a solvent selected from the group consisting of water, organic solvents, and compounds of water or organic solvents; and a heat exchanger that is housed in the container to transfer heat between the above material and a heating/cooling fluid to heat or cool the material, and store heating energy or cooling energy in the material, and that transfers heat between the material and a heat utilization fluid to receive heat from the material and to transfer heat from the material. The material makes a reversible hydrophilic-hydrophobic transition at a lower critical solution temperature, and the solvent included in the thermosensitive polymer gel is kept in a liquid state in hydrophilic-hydrophobic transition.Type: ApplicationFiled: October 4, 2019Publication date: August 18, 2022Applicant: Mitsubishi Electric CorporationInventors: Hideharu NOBUTOKI, Mamoru TERAI, Takumi OHO, Yasumitsu NOMURA, Minoru SATO
-
Publication number: 20210108861Abstract: A heat storage unit includes: a heat storage material that contains water and high polymers that exhibit hydrophilicity or hydrophobicity depending on a temperature; a heat exchanger that causes heat exchange to be performed between a heating fluid and the heat storage material to heat the heat storage material and store heat in the heat storage material, and causes heat exchange to be performed between a heat utilization fluid and the heat storage material to receive heat from the heat storage material and cause heat to be transferred from the heat storage material; and a container that is filled with the heat storage material and houses the heat exchanger.Type: ApplicationFiled: June 18, 2019Publication date: April 15, 2021Applicant: Mitsubishi Electric CorporationInventors: Yasumitsu NOMURA, Shigetoshi IPPOSHI, Shunkei SUZUKI, Junichi NAKAZONO, Hideharu NOBUTOKI
-
Publication number: 20200392390Abstract: Provided is a heat storage material, consisting of a thermo-sensitive polymer gel formed of a thermo-sensitive polymer and a solvent selected from the group consisting of water, an organic solvent, and a mixture thereof, wherein the hydrophilicity and hydrophobicity of the heat storage material reversibly change to each other across the lower critical solution temperature thereof, and in the process of the change, the solvent in the thermo-sensitive polymer gel maintains a liquid state.Type: ApplicationFiled: March 26, 2019Publication date: December 17, 2020Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Hideharu NOBUTOKI
-
Patent number: 8846148Abstract: A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.Type: GrantFiled: November 15, 2006Date of Patent: September 30, 2014Assignee: Nippon Shokubai Co., Ltd.Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
-
Patent number: 8674046Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.Type: GrantFiled: September 14, 2009Date of Patent: March 18, 2014Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Hideharu Nobutoki, Teruhiko Kumada, Toshiyuki Toyoshima, Naoki Yasuda, Suguru Nagae
-
Publication number: 20130160711Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.Type: ApplicationFiled: February 21, 2013Publication date: June 27, 2013Inventors: Teruhiko KUMADA, Hideharu Nobutoki, Naoki Yasuda
-
Patent number: 8404314Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.Type: GrantFiled: March 23, 2007Date of Patent: March 26, 2013Assignee: Mitsubishi Electric CorporationInventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda
-
Patent number: 8288294Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.Type: GrantFiled: June 25, 2009Date of Patent: October 16, 2012Assignees: Mitsubishi Heavy Industries, Ltd., Mitsubishi Electric CorporationInventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
-
Publication number: 20110266660Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.Type: ApplicationFiled: June 25, 2009Publication date: November 3, 2011Applicants: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
-
Patent number: 7981790Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.Type: GrantFiled: January 7, 2010Date of Patent: July 19, 2011Assignee: Renesas Electronics CorporationInventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Kinya Goto, Masazumi Matsuura
-
Patent number: 7824784Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.Type: GrantFiled: December 3, 2008Date of Patent: November 2, 2010Assignees: Mitsubishi Denki Kabushiki Kaisha, Nippon Shokubai Co., Ltd.Inventors: Teruhiko Kumada, Hideharu Nobutoki, Tetsuya Yamamoto, Takuya Kamiyama
-
Publication number: 20100181654Abstract: An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film.Type: ApplicationFiled: June 13, 2009Publication date: July 22, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Toshihito Fujiwara, Toshihiko Nishimori, Toshiya Watanabe, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Chiho Mizushima, Takuya Kamiyama, Tetsuya Yamamoto
-
Publication number: 20100164072Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.Type: ApplicationFiled: March 23, 2007Publication date: July 1, 2010Applicant: Mitsubishi Electric CorporationInventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda
-
Publication number: 20100112805Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.Type: ApplicationFiled: January 7, 2010Publication date: May 6, 2010Applicant: Renesas Technology Corp.Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Kinya Goto, Masazumi Matsuura
-
Patent number: 7671473Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.Type: GrantFiled: June 14, 2006Date of Patent: March 2, 2010Assignee: Renesas Technology Corp.Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Kinya Goto, Masazumi Matsuura
-
Publication number: 20100004425Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.Type: ApplicationFiled: September 14, 2009Publication date: January 7, 2010Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Hideharu Nobutoki, Teruhiko Kumada, Toshiyuki Toyoshima, Naoki Yasuda, Suguru Nagae
-
Publication number: 20090232987Abstract: The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. By using the composition, physical properties such as low dielectric constant property and mechanical strength of the thin film produced from a borazine-ring-containing compound can be improved.Type: ApplicationFiled: November 15, 2006Publication date: September 17, 2009Applicant: NIPPON SHOKUBAI CO., LTD.Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
-
Publication number: 20090090274Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.Type: ApplicationFiled: December 3, 2008Publication date: April 9, 2009Inventors: Teruhiko KUMADA, Hideharu Nobutoki, Tetsuya Yamamoto, Takuya Kamiyama