Abstract: The present invention provides a method of manufacturing a film including the steps of using a compound with borazine skeleton (preferably a compound expressed by a chemical formula (1) below (where R1-R6 may be identical with or different from each other, and are each independently selected from a group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having a carbon number of 1-4, on condition that at least one of R1-R6 is not the hydrogen atom)) as a raw material, and forming the film on a substrate by using a chemical vapor deposition method, characterized in that a negative charge is applied to a site for placing the substrate, and a semiconductor device utilizing a film manufactured by the method.

Abstract: The present invention provides a plasma CVD device including means for supplying a compound with borazine skeleton, a plasma generator for generating a plasma, and means for applying a negative charge to an electrode for placing a substrate. According to the present invention, it is possible to provide a plasma CVD device which stably provides a low dielectric constant and a high mechanical strength over a long period of time, reducing the amount of a gas component (outgas) emitted in heating the film, and causing no trouble in a device manufacturing process.

Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

Abstract: A material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density. 28 to 35% by weight of at least one rare earth element selected from the group consisting of neodymium, praseodymium, dysprosium, terbium, and holmium, 0.9 to 1.3% by weight of boron, 0.25 to 3% by weight of phosphorus, iron, and inevitable impurities. It can further comprise 0.1 to 3.6% by weight of cobalt and 0.02 to 0.25% by weight of copper.

Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

Abstract: A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(?O)O— or —S(?O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.

Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.

Abstract: A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not a hydrogen atom.

Abstract: A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4): wherein R1 to R4 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkyiphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), provided that at least one of R1 to R4 is not a hydrogen atom.

Abstract: A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(?O)O or —S(?O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.

Abstract: A magnetic interaction is calculated by expressing a localized magnetic orbital as a linear combination of molecular orbitals and determining a localized magnetic orbital to be calculated from a maximum overlap condition evaluated between a reference orbital localized in anatomic orbital and the localized magnetic orbital. Another magnetic interaction is calculated by expressing a localized magnetic crystal orbital as a linear combination of crystal orbitals and determining a localized magnetic crystal orbital to be calculated from the maximum overlap condition.

Abstract: The purpose of the present invention is to provide a material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density.

Abstract: A magnetic interaction is calculated by expressing a localized magnetic orbital as a linear combination of molecular orbitals and determining a localized magnetic orbital to be calculated from a maximum overlap condition evaluated between a reference orbital localized in anatomic orbital and the localized magnetic orbital. Another magnetic interaction is calculated by expressing a localized magnetic crystal orbital as a linear combination of crystal orbitals and determining a localized magnetic crystal orbital to be calculated from the maximum overlap condition.

Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): 1

Abstract: There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most3 2.4.

Abstract: A semiconductor device comprises a first insulating layer having a first copper wiring, a second insulating layer having a via of copper communicating with the first copper wiring, a third insulating layer having a second copper communicating with the via, and wherein either of the insulating layers is made of a material containing boron and nitrogen as a main component. Diffusion of copper into the insulating layer is prevented and, at the same time, wiring capacitance is reduced so that a high speed operation of the semiconductor device is enabled.

Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

Abstract: There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most 3 2.4.