Patents by Inventor Hidehiro Taniguchi
Hidehiro Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10944236Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.Type: GrantFiled: June 14, 2017Date of Patent: March 9, 2021Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Hidehiro Taniguchi, Junji Yoshida
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Publication number: 20200243477Abstract: A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.Type: ApplicationFiled: April 15, 2020Publication date: July 30, 2020Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Teruyuki NAKAMURA, Akira SEKINO, Hidehiro TANIGUCHI
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Patent number: 10109982Abstract: A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.Type: GrantFiled: February 7, 2017Date of Patent: October 23, 2018Assignee: FURUKAWA ELECTRIC CO., LTD.Inventor: Hidehiro Taniguchi
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Patent number: 10069280Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.Type: GrantFiled: August 13, 2015Date of Patent: September 4, 2018Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Kouhei Kinugawa, Hidehiro Taniguchi, Masafumi Tajima
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Patent number: 10033154Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.Type: GrantFiled: February 13, 2015Date of Patent: July 24, 2018Assignee: Furukawa Electronic Co., Ltd.Inventors: Kouhei Kinugawa, Hidehiro Taniguchi, Masafumi Tajima, Hirotatsu Ishii, Takeshi Namegaya
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Publication number: 20170365578Abstract: A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.Type: ApplicationFiled: June 23, 2017Publication date: December 21, 2017Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Teruyuki NAKAMURA, Akira SEKINO, Hidehiro TANIGUCHI
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Publication number: 20170288367Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.Type: ApplicationFiled: June 14, 2017Publication date: October 5, 2017Inventors: Hidehiro Taniguchi, Junji Yoshida
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Publication number: 20170149214Abstract: A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.Type: ApplicationFiled: February 7, 2017Publication date: May 25, 2017Applicant: FURUKAWA ELECTRIC CO., LTD.Inventor: Hidehiro TANIGUCHI
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Patent number: 9627849Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.Type: GrantFiled: March 3, 2016Date of Patent: April 18, 2017Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Hidehiro Taniguchi, Yutaka Ohki
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Patent number: 9478944Abstract: A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.Type: GrantFiled: August 14, 2014Date of Patent: October 25, 2016Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Hidehiro Taniguchi, Hirotatsu Ishii, Takeshi Namegaya
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Publication number: 20160276804Abstract: A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.Type: ApplicationFiled: August 14, 2014Publication date: September 22, 2016Applicant: Furukawa Electric Co., Ltd.Inventors: Hidehiro TANIGUCHI, Hirotatsu Ishii, Takeshi Namegaya
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Publication number: 20160181761Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.Type: ApplicationFiled: March 3, 2016Publication date: June 23, 2016Inventors: Hidehiro TANIGUCHI, Yutaka OHKI
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Patent number: 9312443Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.Type: GrantFiled: October 3, 2013Date of Patent: April 12, 2016Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Hidehiro Taniguchi, Yutaka Ohki
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Patent number: 9276374Abstract: To achieve stable multimode output even when driven by a drive current near a threshold value, provided is a laser apparatus comprising a semiconductor laser element; a wavelength selecting element that performs laser oscillation by forming a resonator between itself and a reflective surface of the semiconductor laser element to output oscillated laser light; and an optical system that is optically coupled to an emission surface of the semiconductor laser element with a coupling efficiency ? and inputs to the wavelength selecting element light output from the emission surface. The optical system causes a value that is correlated with a minimum light output within a linear light output region in which light output is linear with respect to an injection current injected to the semiconductor laser element to be less than this value occurring when the coupling efficiency ? is at a maximum.Type: GrantFiled: November 13, 2013Date of Patent: March 1, 2016Assignee: Furukawa Electric Co., Ltd.Inventors: Hidehiro Taniguchi, Yutaka Ohki
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Publication number: 20150349495Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.Type: ApplicationFiled: August 13, 2015Publication date: December 3, 2015Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Kouhei KINUGAWA, Hidehiro TANIGUCHI, Masafumi TAJIMA
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Publication number: 20150180203Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.Type: ApplicationFiled: February 13, 2015Publication date: June 25, 2015Applicant: Furukawa Electric Co., Ltd.Inventors: Kouhei KINUGAWA, Hidehiro Taniguchi, Masafumi Tajima, Hirotatsu Ishii, Takeshi Namegaya
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Publication number: 20150146757Abstract: A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit.Type: ApplicationFiled: February 5, 2015Publication date: May 28, 2015Inventors: Yutaka OHKI, Satoshi ARAKAWA, Shunsuke OKUYAMA, Masaki FUNABASHI, Junji YOSHIDA, Hidehiro TANIGUCHI
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Patent number: 9025633Abstract: An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film.Type: GrantFiled: August 9, 2013Date of Patent: May 5, 2015Assignee: Furukawa Electric Co., Ltd.Inventors: Kouhei Kinugawa, Hidehiro Taniguchi
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Publication number: 20140314113Abstract: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow portion has a uniform width.Type: ApplicationFiled: July 2, 2014Publication date: October 23, 2014Inventors: Yutaka OHKI, Satoshi ARAKAWA, Shunsuke OKUYAMA, Masaki FUNABASHI, Junji YOSHIDA, Hidehiro TANIGUCHI
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Patent number: 8842707Abstract: A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.Type: GrantFiled: March 3, 2010Date of Patent: September 23, 2014Assignee: Furukawa Electric Co., Ltd.Inventors: Hidehiro Taniguchi, Hirotatsu Ishii, Takeshi Namegaya