Abstract: The present invention provides a structure and a technique through which a reaction heat generated in a substrate process can be absorbed in a low temperature range and a temperature of a substrate support (susceptor) can remain at a predetermined temperature or less. There is provided a substrate processing apparatus including: a substrate support including a heater and a cooling channel; a heater power supply; a thermal detector; a coolant supply unit; a controller configured to control the heater power supply and the coolant supply unit to: supply a first power to the heater without a substrate placed on the substrate support while supplying the coolant to the cooling channel; and supply a second power to the heater with the substrate placed on the substrate support while supplying the coolant to the cooling channel.

Abstract: A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate.

Abstract: A substrate processing apparatus includes a process chamber including a process space configured to accommodate a substrate; a substrate support part including a substrate mounting stand; a first gas supply part; a second gas supply part; a gas introduction port configured to introduce a gas from the first gas supply part or the second gas supply part; a gas rectifying part including an opening through which the gas introduced from the gas introduction port passes; a gas flow passage communicated with the opening and formed between the gas rectifying part and an outer periphery of the substrate mounting stand in a circumferential direction; a gas pressure equalizing part including at least two gas pressure equalizing spaces; a purge gas supply part configured to supply different amount of a purge gas to each of the at least two gas pressure equalizing spaces; and a conductance adjustment part.

Abstract: The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.

Abstract: Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.

Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.

Abstract: A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.

Abstract: Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.

Abstract: A substrate processing apparatus includes a first gas supply system provided with a source gas supply control unit; a second gas supply system provided with a reactive gas supply control unit; a third gas supply system provided with a cleaning gas supply control unit; a shower head unit including a buffer chamber connected to the gas supply systems and a dispersion plate installed at a downstream side of the buffer chamber; a substrate support installed at a downstream side of the dispersion plate and electrically grounded; a process chamber accommodating the substrate support; a plasma generation unit including a power supply and a switch configured to switch plasma generation between the buffer chamber and the process chamber; and a control unit configured to control the source gas supply control unit, the reactive gas supply control unit and the plasma generation unit.

Abstract: A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.

Abstract: Provided is a substrate processing apparatus configured to attain conflicting purposes of high throughput and footprint reduction. The substrate processing apparatus comprises a carrying chamber, and a loadlock chamber and at least two process chambers that are arranged around the carrying chamber. The carrying chamber comprises a substrate carrying unit configured to carry a substrate between the loadlock chamber and the process chambers. The substrate carrying unit comprises a first arm provided with a first finger and a second finger, and leading ends of the first and second fingers extend horizontally in the same direction. Each of the process chambers comprises a first process unit and a second process unit, and the second process unit is disposed at a side of the process chamber distant from the carrying chamber with the first process unit being disposed therebetween.

Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.

Abstract: Provided is a substrate placement stage or substrate processing apparatus which can suppress thermal deformation of the substrate placement stage when the substrate placement stage on which a substrate is placed is heated in a process chamber. The substrate placement stage includes: a heating element; a first member surrounding the heating element; and a second member covering a surface of the first member and including a placing surface for placing a substrate thereon, wherein the first member is made of a first material containing ceramics and aluminum, and the second member is made of a second material containing ceramics and aluminum, a content of the ceramics in the second material being lower than that of the first material.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: A substrate processing apparatus includes a processing chamber that processes a substrate, and a substrate placing base enclosed in the processing chamber, and a substrate transporting member that allows the substrate to wait temporarily on the substrate placing base, and exhaust holes provided so as to surround the substrate placing base, and a retracting space that allows the substrate transporting member to move in between lines each connecting the exhaust hole and an upper end of the substrate placing base and the substrate placing base.

Abstract: Provided is a substrate processing apparatus configured to attain conflicting purposes of high throughput and footprint reduction. The substrate processing apparatus comprises a carrying chamber, and a loadlock chamber and at least two process chambers that are arranged around the carrying chamber. The carrying chamber comprises a substrate carrying unit configured to carry a substrate between the loadlock chamber and the process chambers. The substrate carrying unit comprises a first arm provided with a first finger and a second finger, and leading ends of the first and second fingers extend horizontally in the same direction. Each of the process chambers comprises a first process unit and a second process unit, and the second process unit is disposed at a side of the process chamber distant from the carrying chamber with the first process unit being disposed therebetween.

Abstract: A substrate processing apparatus includes a transport chamber and a processing chamber that processes substrates. The transport chamber has a first substrate transport member transporting the substrates from the transport chamber to the processing chamber. The processing chamber has a first processing unit which is adjacent to the transport chamber and has a first substrate placing base, a second processing unit which is adjacent to the other side of the transport chamber in the first processing unit and has a second substrate placing base, a second substrate transport member transporting the substrates between the first processing unit and the second processing unit, and a control unit controlling at least the second substrate transport member.

Abstract: A substrate processing apparatus includes a processing chamber that processes a substrate, and a substrate placing base enclosed in the processing chamber, and a substrate transporting member that allows the substrate to wait temporarily on the substrate placing base, and exhaust holes provided so as to surround the substrate placing base, and a retracting space that allows the substrate transporting member to move in between lines each connecting the exhaust hole and an upper end of the substrate placing base and the substrate placing base.

Abstract: A substrate is held by a susceptor (holding tool) in a processing chamber. A plate is provided on a periphery of the substrate. Gas supply ports are constructed to be provided on a side of the substrate and above the plate, and to supply gas to the substrate from a space above the plate. Outlets are provided at least on an upstream side and downstream side of the substrate on the plate, and are adapted to discharge the gas to a space below the plate. An exhaust port communicates with the outlets, and is provided on an opposite side to the gas supply ports with the substrate sandwiched there between and below the plate. The outlets are composed so that conductance of the upstream outlet in a gas flow between the outlets can be larger than conductance of the downstream outlet.