Patents by Inventor Hidekazu Nakanishi
Hidekazu Nakanishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8084915Abstract: A surface acoustic wave resonator includes a piezoelectric substrate, a first surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate, and a second surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate. The first surface acoustic wave resonator and the second surface acoustic wave resonator are apodized and connected in parallel.Type: GrantFiled: November 7, 2007Date of Patent: December 27, 2011Assignee: Panasonic CorporationInventors: Yosuke Hamaoka, Hidekazu Nakanishi, Hiroyuki Nakamura, Rei Goto
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Patent number: 8072293Abstract: A surface acoustic wave filter comprised of a plurality of surface acoustic wave resonators having different resonance frequencies, the filter comprising a substrate made of lithium niobate, comb electrodes (1201 and 1202) formed on the substrate, and a thin dielectric film covering the comb electrodes (1201 and 1202), wherein the surface acoustic wave resonator having a lower resonance frequency is formed to have a metallization ratio larger than a metallization ratio of the surface acoustic wave resonator having a higher resonance frequency, thereby providing the surface acoustic wave filter and an antenna duplexer featuring superior characteristics with insignificant ripples while suppressing spurious responses of the surface acoustic wave resonators.Type: GrantFiled: November 12, 2007Date of Patent: December 6, 2011Assignee: Panasonic CorporationInventors: Hiroyuki Nakamura, Ken Matsunami, Tetsuya Tsurunari, Hidekazu Nakanishi
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Patent number: 8035460Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)?4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.Type: GrantFiled: February 14, 2007Date of Patent: October 11, 2011Assignee: Panasonic CorporationInventors: Hidekazu Nakanishi, Ryoichi Takayama, Yukio Iwasaki, Yosuke Hamaoka, Hiroyuki Nakamura
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Patent number: 7999437Abstract: An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.Type: GrantFiled: November 16, 2009Date of Patent: August 16, 2011Assignee: Panasonic CorporationInventors: Hiroki Kamiguchi, Hidekazu Nakanishi, Yosuke Hamaoka, Shoji Okamoto
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Publication number: 20110193655Abstract: An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region.Type: ApplicationFiled: February 23, 2010Publication date: August 11, 2011Applicant: PANASONIC CORPORATIONInventors: Hiroki Kamiguchi, Hidekazu Nakanishi, Yosuke Hamaoka, Shoji Okamoto, Hiroyuki Nakamura
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Patent number: 7982365Abstract: The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.Type: GrantFiled: April 23, 2009Date of Patent: July 19, 2011Assignee: Panasonic CorporationInventors: Rei Goto, Hidekazu Nakanishi, Hiroyuki Nakamura
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Publication number: 20110156837Abstract: An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.Type: ApplicationFiled: December 22, 2010Publication date: June 30, 2011Applicant: Panasonic CorporationInventors: Takashi INOUE, Hidekazu Nakanishi, Hiroyuki Nakamura, Shun-ichi Seki, Shoji Okamoto
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Patent number: 7965155Abstract: The present invention provides a surface acoustic wave resonator capable of improving a leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is formed on at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, such that the SiO2 thin film is removed from upper sections of the bus-bar electrode regions of the interdigital transducer electrode.Type: GrantFiled: December 14, 2007Date of Patent: June 21, 2011Assignee: Panasonic CorporationInventors: Hiroyuki Nakamura, Hidekazu Nakanishi, Yukio Iwasaki, Ken Matsunami, Tetsuya Tsurunari
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Publication number: 20110133858Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on a piezoelectric device, a first dielectric layer disposed on the piezoelectric substrate such that it covers the IDT electrode, and a second dielectric layer disposed over the first dielectric layer. The second dielectric layer propagates transverse waves faster than that on the first dielectric layer. When a film thickness of the second dielectric layer is greater than a wave length of a major wave excited by the IDT electrode, a cut angle of the piezoelectric substrate in indication of Euler angles (?, ?, ?) is set to ??0°, ??0°, and ??0°. This suppresses deterioration of device characteristics.Type: ApplicationFiled: August 5, 2009Publication date: June 9, 2011Inventors: Rei Goto, Hidekazu Nakanishi, Hiroyuki Nakamura
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Publication number: 20110109196Abstract: A plate wave element includes a piezoelectric body, a comb-shaped electrode disposed on an upper surface of the piezoelectric body, and a medium layer disposed on the upper surface of the piezoelectric body so as to cover the comb-shaped electrode. The comb-shaped electrode excites a Lamb wave as a main wave. The medium layer has a frequency temperature characteristic opposite to that of the piezoelectric body. The plate wave element has a preferable frequency temperature characteristic.Type: ApplicationFiled: July 8, 2009Publication date: May 12, 2011Inventors: Rei Goto, Hidekazu Nakanishi, Hiroyuki Nakamura
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Patent number: 7939988Abstract: An acoustic wave device includes a piezoelectric substrate having a surface adapted to allow a leaky surface wave to propagate thereon, an interdigital electrode provided on a portion of the surface of the piezoelectric substrate, and a dielectric layer provided on the surface of the piezoelectric substrate to cover the interdigital electrode. The piezoelectric substrate is made of lithium niobate. The dielectric layer is made of tantalum pentoxide. The piezoelectric substrate is made of a rotated Y-cut substrate having a cut angle which is not smaller than 2.5 degrees and is not larger than 22.5 degrees. A ratio H/? of a film thickness H of the dielectric layer to a wavelength ? of a center frequency of the leaky surface wave ranges from 0.034 to 0.126. This acoustic wave device works in a wide band width.Type: GrantFiled: April 23, 2009Date of Patent: May 10, 2011Assignee: Panasonic CorporationInventors: Rei Goto, Hidekazu Nakanishi, Hiroyuki Nakamura
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Patent number: 7855619Abstract: An electronic part, an object of which is to improve temperature characteristics and electrical properties, includes a substrate (1), a comb-type electrode (2) that is disposed on the upper surface of the substrate (1), and a protective film (4) that covers the comb-type electrode (2) and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film (4) is L, the width of one pitch of a convex portion (4a) of the unevenness in the uneven shape of the protective film (4) is L1, the width of one pitch of a concave portion (4b) thereof is L2, the pitch width of one pitch of the comb-type electrode (2) is p, the width of one of electrode fingers which form the comb-type electrode (2) is p1 and the width between the electrode fingers is p2, then each parameter is set so that the following expressions are satisfied, L1?p1 and L2?p2 (herein, the correlations of L?p, p1+p2=p and L1+L2=L are satisfied).Type: GrantFiled: December 12, 2008Date of Patent: December 21, 2010Assignee: Panasonic CorporationInventors: Ryouichi Takayama, Hidekazu Nakanishi, Takashi Inoue, Tetsuo Kawasaki, Kouji Hasegawa, Yukio Iwasaki
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Patent number: 7812688Abstract: A surface acoustic wave filter includes a piezoelectric substrate including lithium niobate, a series resonator including a first interdigital transducer electrode provided on the piezoelectric substrate, and a parallel resonator including a second interdigital transducer electrode provided on the piezoelectric substrate and being electrically connected to the series resonator. An apodized weighting factor of the first interdigital transducer electrode is smaller than an apodized weighting factor of the second interdigital transducer electrode. This surface acoustic wave filter has a small loss.Type: GrantFiled: June 6, 2008Date of Patent: October 12, 2010Assignee: Panasonic CorporationInventors: Hiroyuki Nakamura, Tetsuya Tsurunari, Ken Matsunami, Hidekazu Nakanishi
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Publication number: 20100231089Abstract: A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.Type: ApplicationFiled: March 10, 2010Publication date: September 16, 2010Inventors: Hidekazu NAKANISHI, Hiroyuki Nakamura, Yukio Iwasaki
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Publication number: 20100219718Abstract: A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.Type: ApplicationFiled: October 21, 2008Publication date: September 2, 2010Applicant: Panasonic CorporationInventors: Kazunori Nishimura, Hiroyuki Nakamura, Hidekazu Nakanishi, Ryouichi Takayama, Takashi Inoue
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Publication number: 20100219905Abstract: The present invention provides a surface acoustic wave resonator capable of improving the leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is further formed thereon. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, and the SiO2 thin film is removed from upper sections of the bus-bar electrode regions in the interdigital transducer electrode.Type: ApplicationFiled: December 14, 2007Publication date: September 2, 2010Inventors: Hiroyuki Nakamura, Hidekazu Nakanishi, Yukio Iwasaki, Ken Matsunami, Tetsuya Tsurunari
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Publication number: 20100164646Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)?4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.Type: ApplicationFiled: February 14, 2007Publication date: July 1, 2010Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hidekazu Nakanishi, Ryoichi Takayama, Yukio Iwasaki, Yosuke Hamaoka, Hiroyuki Nakamura
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Publication number: 20100127597Abstract: An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.Type: ApplicationFiled: November 16, 2009Publication date: May 27, 2010Applicant: PANASONIC CORPORATIONInventors: HIROKI KAMIGUCHI, HIDEKAZU NAKANISHI, YOSUKE HAMAOKA, SHOJI OKAMOTO
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Publication number: 20100060102Abstract: An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.Type: ApplicationFiled: September 2, 2009Publication date: March 11, 2010Inventors: Rei Goto, Hidekazu Nakanishi, Hiroyuki Nakamura
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Publication number: 20100060103Abstract: A surface acoustic wave resonator of the present invention includes a piezoelectric substrate (10), a first surface acoustic wave resonator (20) having a comb electrode (11) provided on the piezoelectric substrate (10), and a second surface acoustic wave resonator (30) having a comb electrode (12) provided on the piezoelectric substrate (10). The first surface acoustic wave resonator (20) and the second surface acoustic wave resonator (30) are apodized and connected in parallel.Type: ApplicationFiled: November 7, 2007Publication date: March 11, 2010Inventors: Yosuke Hamaoka, Hidekazu Nakanishi, Hiroyuki Nakamura, Rei Goto