Abstract: A method of manufacturing a semiconductor apparatus includes: a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the first cavity; an integrating step of integrating the substrate on which the semiconductor device is mounted, the substrate on which no semiconductor device is mounted and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower mold; and a dicing step of extracting the integrated substrates from the molding mold and dicing the integrated substrates to obtain an individual semiconductor apparatus.

Abstract: The invention provides an encapsulant for collectively encapsulating a semiconductor devices mounting surface of a substrate having semiconductor devices mounting thereon or a semiconductor devices forming surface of a wafer having semiconductor devices forming thereon, and the encapsulant comprises a supporting substrate having a difference of a linear expansion coefficient from that of the substrate or the wafer of 5 ppm or less and a thermosetting resin layer being laminated, wherein the thermosetting resin layer has a shape having a height difference to a thickness direction.

Abstract: A vacuum laminating apparatus for use in manufacturing a semiconductor apparatus, including a frame mechanism to surround at least a side face of a support-base attached encapsulant including a thermosetting resin layer stacked as an encapsulant on a support base, the frame mechanism including a holding unit to hold a substrate on which semiconductor devices are mounted or a wafer on which semiconductor devices are formed with the substrate or the wafer facing and spaced apart from the thermosetting resin layer of the support-base attached encapsulant, the vacuum laminating apparatus capable of vacuum laminating the support-base attached encapsulant surrounded by the frame mechanism together with the substrate or wafer. The vacuum laminating apparatus inhibit the occurrence of voids in resin layer and warp of a substrate or wafer and manufacture a semiconductor apparatus having a precisely formed resin layer, even when the substrate or wafer used has a large area.

Abstract: The present invention provides a surface-modified glass fiber film having its surface modified by a silicon-containing compound, and a value of a common flexural rigidity of the surface-modified glass fiber film as measured by the method described in JIS R 3420 is in the range of 3 to 100 times as compared to a value of the common flexural rigidity of an unmodified glass fiber film. There can be provided a surface-modified glass fiber film having a high strength, a high heat resistance, a good dimensional stability, a good self-supporting property, a low average linear expansion coefficient, a high storage rigidity at high temperature, and an excellent surface uniformity.

Abstract: The present invention provides an encapsulant with a base for use in semiconductor encapsulation, for collectively encapsulating a device mounting surface of a substrate on which semiconductor devices are mounted, or a device forming surface of a wafer on which semiconductor devices are formed, the encapsulant comprising the base, an encapsulating resin layer composed of an uncured or semi-cured thermosetting resin formed on one surface of the base, and a surface resin layer formed on the other surface of the base. The encapsulant enables a semiconductor apparatus having a good appearance and laser marking property to be manufactured.

Abstract: Described herein is a sealant laminated composite for collectively sealing a semiconductor device's mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device's forming surface of a wafer on which semiconductor devices are formed. The composite can include a support wafer and an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer. In certain aspects, the sealant laminated composite is very versatile, even when a large diameter or thin substrate or wafer is sealed.

Abstract: Disclosed is a sealant laminated composite for collectively sealing a semiconductor devices mounting surface of a substrate on which semiconductor devices may be mounted or a semiconductor devices forming surface of a wafer on which semiconductor devices may be formed, including a support wafer that may be composed of silicon and an uncured resin layer that may be constituted of an uncured thermosetting resin formed on one side of the support wafer.

Abstract: The invention provides an encapsulant equipped with the supporting substrate which is an encapsulant for collectively encapsulating a semiconductor devices mounting surface of a substrate having semiconductor devices mounting thereon or a semiconductor devices forming surface of a wafer having semiconductor devices forming thereon, and the encapsulant equipped with the supporting substrate comprises a supporting substrate having a difference of a linear expansion coefficient from that of the substrate or the wafer of 5 ppm or less and a thermosetting resin layer being laminated, wherein the thermosetting resin layer has a shape having a height difference to a thickness direction.

Abstract: A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed, including a resin-impregnated fibrous base material which is obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin and has a linear expansion coefficient (ppm/° C.) in an X-Y direction of less than 3 ppm, and an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.

Abstract: A method of manufacturing a semiconductor apparatus includes: a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the first cavity; an integrating step of integrating the substrate on which the semiconductor device is mounted, the substrate on which no semiconductor device is mounted and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower mold; and a dicing step of extracting the integrated substrates from the molding mold and dicing the integrated substrates to obtain an individual semiconductor apparatus.

Abstract: A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Abstract: A resin solution composition comprising (A) a polyamic acid resin, (B) an alkoxysilyl-containing polyamic acid resin, and (C) an organic solvent cures into a product that has good substrate adhesion and heat resistance and is effective in forming a protective film on a semiconductor device prior to encapsulation with epoxy resin molding material (molding compound) in that it overcomes the chip cracking and thermal deterioration problems of semiconductor packages by thermal stress.

Abstract: A primer composition comprising an alkoxysilyl-containing polyamide-imide resin, an epoxy resin, a curing promoter, and an organic solvent forms a cured coating having heat resistance and water resistance through brief low-temperature heating and helps bonding of epoxy resin molding compound to semiconductor members.

Abstract: A partial block polyimide-polysiloxane copolymer is provided comprising repeat unit structures having structural formulae (1) and (2) wherein X is an aromatic or aliphatic ring-containing tetravalent organic radical, Y1 is a diamine residue, Y2 is a diaminosiloxane residue, Y1 and Y2 are contained in the copolymer in amounts of 99-20 mol % and 1-80 mol %, respectively, L and m each are an integer of 2-50. The copolymer has good adhesion to substrates, moisture-proof reliability and a low modulus of elasticity.

Abstract: A resin solution composition comprising (A) a polyamic acid resin, (B) an alkoxysilyl-containing polyamic acid resin, and (C) an organic solvent cures into a product that has good substrate adhesion and heat resistance and is effective in forming a protective film on a semiconductor device prior to encapsulation with epoxy resin molding material (molding compound) in that it overcomes the chip cracking and thermal deterioration problems of semiconductor packages by thermal stress.

Abstract: In a wafer dicing/die bonding sheet comprising a backing member, an adhesive layer, and a protective member, the adhesive layer is made of an adhesive composition comprising a phenolic hydroxyl radical-bearing polyimide resin, an epoxy resin, and an epoxy resin curing agent, the ratio of the total weight of the epoxy resin and the epoxy resin curing agent to the weight of the polyimide resin being from 0.1:1 to 3:1. Due to heat resistance, improved adhesive properties and a low modulus of elasticity, the wafer dicing/die bonding sheet is effective for reducing the warpage of a chip after die bonding.

Abstract: A primer composition comprising an alkoxysilyl-containing polyamide-imide resin, an epoxy resin, a curing promoter, and an organic solvent forms a cured coating having heat resistance and water resistance through brief low-temperature heating and helps bonding of epoxy resin molding compound to semiconductor members.

Abstract: A conductive resin composition primarily comprising (A) 100 parts by weight of a thermosetting or thermoplastic resin, (B) 5–2,000 parts by weight of a conductive filler, and (C) 0.1–300 parts by weight of organic resin or rubber particulates has a low volume resistivity and stability thereof, and is effectively adherent. When applied to semiconductor packages, the composition can prevent the semiconductor chips from warpage or cracking due to thermal stresses in the semiconductor packages, ensuring the fabrication of semiconductor devices with high reliability.

Abstract: A partial block polyimide-polysiloxane copolymer is provided comprising repeat unit structures having structural formulae (1) and (2) wherein X is an aromatic or aliphatic ring-containing tetravalent organic radical, Y1 is a diamine residue, Y2 is a diaminosiloxane residue, Y1 and Y2 are contained in the copolymer in amounts of 99-20 mol % and 1-80 mol %, respectively, L and m each are an integer of 2-50. The copolymer has good adhesion to substrates, moisture-proof reliability and a low modulus of elasticity.

Abstract: A polyimide resin having phenolic hydroxyl radicals in its skeleton is prepared using a diamine bearing an aromatic ring having an amino radical attached thereto and another aromatic ring having a phenolic hydroxyl radical. The polyimide resin and a composition comprising the polyimide resin, an epoxy resin and a curing agent are suited for use as varnish, adhesive and adhesive film for which adhesion and heat resistance are required.