Abstract: A video data reproducing apparatus and a video data transfer system are able to reproduce video data of a range designated by file information from a VTR (video tape recorder) based on the fact that the file information for designating video data of a constant range of video data with high resolution such as a non-compressed HDTV (high-definition television) signal recorded on the VTR and a transfer command for requesting transfer of video data of the range designated by this file information are received from a computer through a LAN (local area network) and they are able to transfer reproduced video data through a high-speed network to the computer.

Abstract: A main body 17 of controller box 16 is attached to the lower surface of upper frame 15 of car frame 11 such that it can slide freely, and upper frame 15 is configured such that it constitutes a part of a wall of controller box 16.

Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

Abstract: A wafer transfer method, by which, when a wafer is loaded into a system, heat shock applied to the wafer can be relieved, the frequency of occurrence of crystal dislocation such as slip can be decreased, and productivity can be improved due to saving of energy and time required for heating and cooling of the system, and there is also provided a wafer support member used for this method. In this method, a step for transferring wafers so as to replace a wafer, which finishes its thin film growth process, with a following wafer, which is to be subjected to its thin film growth process, is carried out under the temperature being higher than the room temperature, while the wafer 1 is transferred integrally with a wafer support member 2 used for the thin film growth process.

Abstract: There is provided a wafer transfer method, by which, when a wafer is loaded into a system, heat shock applied to the wafer can be relieved, the frequency of occurrence of crystal dislocation such as slip can be decreased, and productivity can be improved due to saving of energy and time required for heating and cooling of the system, and there is also provided a wafer support member used for this method. In this method, a step for transferring wafers so as to replace a wafer, which finishes its thin film growth process, with a following wafer, which is to be subjected to its thin film growth process, is carried out under the temperature being higher than the room temperature, while the wafer 1 is transferred integrally with a wafer support member 2 used for the thin film growth process.

Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.

Abstract: A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program.

Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

Abstract: An improved method of growing a thin film in gaseous phase maintaining a uniform thickness and uniform electric properties such as resistivity, etc. over the whole surface of the film, and an apparatus for growing a thin film in gaseous phase adapted to conducting the above method.

Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.

Abstract: A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program.

Abstract: When the sensor block 10 is placed on the roller block 20 and the reading surface of the reading sensor 31 faces the aforementioned driving roller 28, then paper is automatically fed with the driving roller 28 and text and image data are read with the reading sensor 31. On the other hand, when the sensor block 10 is reversed 180.degree. and placed again over the roller block 20, then the reading sensor 31 reads text and images when the sensor block 10, arranged beneath the roller block 20, are moving or the document by manual operation.

Abstract: A magnetic recording and reproducing apparatus amplifies a current representing a recording signal reproduced from an information signal recorded on a magnetic tape, suppresses low frequency components of the current amplified signal, then amplifies a voltage representing the suppressed signal. The voltage amplified signal is supplied from a primary winding of a rotary transformer inside a drum to a secondary winding of the rotary transformer disposed outside the drum, and then its low frequency components are emphasized. This avoids the problems of an inadequate S/N in the low frequency components of the output of a voltage amplifier, and difficulty in providing a high voltage signal from a current amplifier. The emphasized signal is supplied to one of a plurality of equalizing circuits that respectively equalize a signal reproduced at one of a plurality of frequencies.

Abstract: In a data recording apparatus, the data rate of an incoming information signal is used to select the frequency processing, such as band limiting or high frequency emphasizing, performed on the information signal to alter its frequency characteristic so that the information signal can be digitally recorded with magnetized patterns that are substantially similar even when recording at different recording speeds.

Abstract: An exhaust gas cleaning device is disposed within an exhaust pipe connected to the exhaust port of an internal combustion engine. The exhaust gas cleaning device comprises an inner pipe disposed coaxially within the exhaust pipe with an annular space defined therebetween, the inner pipe being provided with a plurality of perforations, and laminated structures disposed upon the inner and outer surfaces of the inner pipe and including a catalyst for cleaning unburned components of the exhaust gas flowing within the exhaust pipe, each of the laminated structures being formed of a material which is not deleterious to the catalyst. The laminated structure includes a catalyst carrier layer formed by, in accordance with one method, fusibly injecting a catalyst including a solution onto an intermediate layer formed upon the inner and outer surfaces of the inner pipe and drying the same so as to remove the liquid component therefrom.

Abstract: A drop-out detecting circuit forms a drop-out detecting signal on the basis of the result of comparing the frequency of a frequency modulated video signal reproduced from a slant track on a magnetic tape with a reference frequency. The level of a reproduction state detecting signal formed on the basis of the envelope of the reproduced frequency modulated video signal is compared with a predetermined level and the above reference frequency is varied on the basis of the compared result.

Abstract: A printing mechanism of a line printer for printing Braille characters is disclosed. The printing mechanism comprises a base member having a plurality of printing pins arranged in a row and adapted to be prevented from moving downward in response to the energization of solenoids corresponding to character patterns to be printed, a semicircular printing plate for pressing a paper against the printing pins and a printing plate driving mechanism. During every printing operation, the printing plate is rocked in a lengthwise direction by a pair of rotating disks provided at the ends of the printing plate and each including an eccentric cam groove different in phase with each other, so that the paper is successively pressed against the printing pins in the direction of their arrangement and the raised dots are produced. In another embodiment of the invention, the printing plate is operated by a pair of piston-crank mechanisms provided at the ends of the printing plate.