Abstract: The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.

Abstract: A laser beam is projected from a laser oscillator 1 and converged by a condenser lens 2. The laser beam converged by the condenser lens 2 is reflected in any arbitrary direction by a scanning mirror 4 which is rotated by scanning means 3. The laser beam is linearly moved. The laser beam is reflected by a curved surface reflecting mirror 5 which is formed in a spherical surface in the primary scanning direction of the laser beam and an ellipsoid in the secondary scanning direction so that the scanned surface is scanned at a substantially predetermined speed.

Abstract: A p-type ohmic metal electrode for use with a group II-VI semiconductor device. The p-type ohmic metal electrode is made of a group II-IV p-type semiconductor layer having a group II element other than zinc dispersed in that layer disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the group II-IV semiconductor layer including the group II element other than zinc. Also disclosed is a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium and the above ohmic metal electrode disposed on the group II-IV semiconductor device. Additionally, a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium, a layer of a group II element other than zinc disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the layer of the group II element other than zinc is disclosed.

Abstract: The vapor phase growth method of the group III-V compound semiconductor thin-film, using hydrides and organic metals containing no halogen elements as a raw material for the growth, is disclosed. The method is carried out by alternately introducing group III organic metals raw material gas as well as halides gas and/or halogens gas into a growth chamber, and also by repeating the introducing to grow a thin-film. In accordance with the present invention, it is possible to obtain such high-quality crystal growth as the planarization of hetero junction interface, the improvement of surface morphology or facet, and no deposit of polycrystals on the mask in a wide range.

Abstract: The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5<w.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.III As, wherein B.sup.III represents a Group III element with Al composition of not less than 0.45, formed on the A.sub.1.sup.III As.sub.w P.sub.1-w film, and a thin film of C.sub.1.sup.III As.sub.x P.sub.1-x, wherein C.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.ltoreq.x 0.5, formed on the B.sup.III As film; or (2) a thin film of A.sub.2.sup.III As.sub.u P.sub.1-u, wherein A.sub.2.sup.III represents a Group III element with In composition of not less than 0.3, 0.ltoreq.u.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.

Abstract: In order to provide an intermediate terminal for an electrical connection box with an enhanced degree of freedom in terms of a tab inserting direction, an intermediate terminal having a column with hollow end portions and connecting spring portions (5g-5j; 3b, 3c) projecting inwardly into the hollow interior of the end portions so as to allow the insertion and fitting of a tab (1a, 2a) at each end portion, wherein the connecting spring portions (5g-5j; 3b, 3c) at at least one end portion are provided such that a tab (1a, 2a) can be inserted and fitted in at least two different rotational orientations with respect to the longitudinal axis of the column.

Abstract: The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.

Abstract: A sealing construction for an electrical connection box, in which a waterproof cover is mounted on a main body, including a packing which is fitted into a packing groove of the waterproof cover so as to be brought into pressing contact with a contact portion of the main body; the packing being formed by hardening liquid packing compound injected directly into the packing groove of the waterproof cover, and a method of forming the packing.

Abstract: A heat exchange inhibitor composition, characterized in that phosphates, amine salts, silicates, borates or nitrites are not necessary, and further characterized in that p-tert butyl benzoic acid and/or an alkali salt or salts thereof and a triazole are contained therein, which provides improved inhibitive abilities against metal corrosion, glycol oxidation and plugging of the circulation passages of a heat exchange system and further provides improved stability in hard water without forming chemical depositions and does not produce nitrosamines or form gel with other salts in the heat exchange fluid.

Abstract: A method of preparing a compound semiconductor is carried out, by introducing the group III organic metals gas and/or the hydrides containing group V elements, or group V organic metals gas into a growth chamber, in addition to a carrier gas and an etching gas, in a method of preparing a group III-V compound semiconductor including the process to effect the gas etching of a single crystal sustrate surface and/or a single crystal thin-film surface in the growth chamber, just before a vapor phase growth of a compound semiconductor thin-film is performed, using the hydrides and the organic metals gas.According to the present invention, the impurity pollution, the oxide film, the thermometamorphism and the hike, in an interface between the single crystal substrate and the epitaxial layer as well as in the regrown interface can be removed, thereby making it possible to get a clean surface of the interface and to restrain the accumulation or the depletion of carrier-concentration which has not been intended.

Abstract: A device for automatically fixing bus bars and after-fixing bus bars on an insulating board includes a workpiece setting table, on which a bus bar plate and an insulating board are set, is moved towards an upper die and a lower die, which are provided with an insulating board holding section and a bridge cutting and bus bar fixing section. The upper die is moved downwardly and upwardly, so that the bridges are removed from the bus bar plate, and the insulating board is picked up. Thereafter, an insulating board holding board holding the insulating board is moved to the bridge cutting and bus bar fixing section. The upper die is moved downwardly and upwardly again, so that bus bars are fixed onto the insulating board. As the upper die moves downwardly and then upwardly, the bridges are removed from the bus bar plate, and the insulating board and the intermediate product are lifted.

Abstract: A pressurized fluidized bed combustion boiler system comprising: a boiler; a filtration apparatus with ceramics filters in a flue gas system; and a louver separator as a primary stage dust separator disposed between the boiler and the filtration apparatus.

Abstract: Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.

Abstract: An embroidering machine comprised of a common electronic sewing machine having a first controller and an embroidering unit detachably connected to the electronic sewing machine. The operating speed of a main motor of the electronic sewing machine is controlled according to a feed by which an embroidery frame holding a workpiece is moved when forming a stitch of an embroidery pattern. The embroidering unit has a second controller which generates a speed control signal relevant to the feed by which the embroidery frame is moved to form a stitch, the speed control signal is applied through a signal line and a connector to the first controller of the electronic sewing machine, and the first controller controls the operating speed of the main motor according to the speed control signal.

Abstract: A sheet feeding apparatus for feeding a sheet to a sheet receiving device includes a first unit having at least one stacking tray for stacking sheets; a first feeder for feeding the sheet from the stacking tray of the first unit; a first guiding member for guiding the sheet from the first feeder to the receiving device; a second guiding member for guiding a side of the sheet opposite from a side guided by the first guiding member to constitute together with the first guiding member a sheet passage; a second unit having at least one stacking tray for stacking sheets; second feeder for feeding the sheet from the stacking tray of the second unit; a third guiding member for guiding the sheet from the second feeder to the receiving device; and a supporting device for supporting the first unit to the second unit for movement between a first position wherein the first guiding member guides the sheet from the first feeder and a second position wherein at least one of the first guiding member and the second guiding me

Abstract: A high-mobility semiconductor device having GaAs/AlGaAs hetero junction of the present invention comprises a GaAs active layer and a GaAs contact layer, with a high-carrier concentration AlGaAs barrier layer interposed therebetween, so that the effective carrier concentration of the active layer can be increased and thus the thickness thereof can be reduced, resulting in an increase in the trans-conductance and improvement in the high frequency characteristics. Since the presence of the AlGaAs barrier layer enables selecting etching, such element characteristics as the plane uniformity and reproducibility can be improved.

Abstract: A method of operating a common elevator in a composite building which contains a plurality of types of exclusively used floors provided separately from each other and corresponding to a plurality of objectives, and a plurality of lobby floors provided separately from each other and corresponding to the plurality of types of exclusively used floors comprises the steps of selecting either of a plurality of operation modes respectively corresponding to the plurality of types of exclusively used floors and offering an elevator service only to the corresponding exclusively used floors and to the corresponding lobby floor, determining the presence or absence of users of the elevator in the selected operation mode, and changing over the operation mode to the other operation mode among the plurality of operation modes when it is determined that there is no user.

Abstract: A wheel crane wherein the maximum radius of pivotal motion of a boom is minimized and the boom foot mounting point can be positioned as rearwards as possible to realize an increase of the boom length. The wheel crane comprises a lower running body, an upper pivotal body, a boom mounted for up and down pivotal motion around a boom foot pin on the upper pivotal body, at least two winch drums and guide sheaves disposed at rear locations of the pivotal body. The boom foot pin is mounted at an end portion of the base end portion of the boom on the rear face side of the boom and at a location of the upper pivotal body rearwardly of the center of a rear axle of the lower running body.

Abstract: A method for assembling fuel cell stack comprises the steps of alternately stacking the prescribed number of fuel cells and bipolar plates to form a plurality of substacks, arranging the laid substacks on a supporting base so that the central axes of the substacks parallel to the stacking direction of the fuel cell stack are on a horizontal straight line to form a complete fuel cell stack, tying up the fuel cell stack to apply a predetermined compressive load to the fuel cell components, making the fuel cell stack vertical, and then removing said supporting base from the fuel cell stack. The supporting base on which a plurality of fuel cell substacks is provided at its both end with a pair of side plates, and a pressure plate is slidably arranged on the base and connected to driving means.