Abstract: According to one aspect of the present disclosure, there is provided a substrate processing method including: forming a film containing a predetermined element on a substrate by performing a first cycle a first predetermined number of times, the first cycle including: forming a first layer containing the predetermined element by performing a second cycle a second predetermined number of times, wherein a surface of the first layer is halogen-terminated and wherein the second cycle includes: supplying a first gas containing the predetermined element and a halogen element to the substrate; and removing the first gas; and forming a second layer containing the predetermined element by supplying a second gas containing the predetermined element to the substrate.

Abstract: There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

Abstract: There is included (a) forming a chlorine-containing semiconductor layer on an insulating film provided on a surface of a substrate by supplying a first gas containing a semiconductor element and chlorine to the substrate; and (b) forming a semiconductor film on the chlorine-containing semiconductor layer by supplying a second gas containing a semiconductor element to the substrate, wherein a chlorine concentration in the chlorine-containing semiconductor layer formed in (a) is made 1.0×1020 atoms/cm3 or more and 1.0× 1022 atoms/cm3 or less.

Abstract: There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

Abstract: There is provided a technique that includes: (a) forming a first film in an amorphous state on the substrate by supplying a first process gas to the substrate; (b) forming a second film in an amorphous state, which has a crystallization temperature lower than a crystallization temperature of the first film, on the first film by supplying a second process gas to the substrate; (c) crystallizing the first film and the second film formed on the substrate by heating the first film and the second film; and (d) removing at least the second film by exposing a surface of the substrate to an etching agent after crystallizing the first film and the second film.

Abstract: There is provided a technique that includes: a controller configured to execute a process recipe including a plurality of steps to perform a predetermined process on a substrate. The controller acquires device data, which includes at least one of a current value, a rotational speed, and a back pressure of a pump, in a specific step among the plurality of steps and compares an acquired value of the device data with a previously acquired value of the device data. The controller generates a notification if at least one of the following conditions is met: the acquired value for the current value is larger than the previously acquired value for the current value, the acquired value for the back pressure is larger than the previously acquired value for the back pressure, and the acquired value for the rotational speed is smaller than the previously acquired value for the rotational speed.

Abstract: There is provided a technique that includes: a main controller configured to execute a process recipe including a plurality of steps to perform a predetermined process on a substrate so as to acquire device data when executing the process recipe; and a storage part configured to store the acquired device data, wherein the main controller is configured to: acquire the device data in a predetermined specific step among the steps constituting the process recipe; calculate a value of the acquired device data in the specific step; compare the calculated value with a value of the device data in the specific step calculated at a time of previous execution of the process recipe; and generate an alarm when the calculated value shows a predefined tendency.

Abstract: There is provided a technique that includes: forming an oxynitride film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a precursor supply part to the at least one substrate; (b) supplying an oxidizing agent from an oxidizing agent supply part to the at least one substrate; and (c) supplying a nitriding agent from a nitriding agent supply part to the at least one substrate, wherein in (b), an inert gas is supplied from an inert gas supply part, which is different from the oxidizing agent supply part, to the at least one substrate, and at least one of nitrogen concentration and refractive index of the oxynitride film formed on the at least one substrate is adjusted by controlling a flow rate of the inert gas.

Abstract: There is provided a technique that includes: forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a first supplier to the substrate and exhausting the precursor from an exhaust port installed opposite to the first supplier with the substrate interposed between the exhaust port and the first supplier; and (b) supplying a reactant from a second supplier to the substrate and exhausting the reactant from the exhaust port, wherein in (a), inert gas is supplied into the process chamber from a third supplier installed at a region, which is a region on a side of the exhaust port among a plurality of regions partitioned in the process chamber by a bisector perpendicular to straight line connecting the first supplier and the exhaust port in a plane view.

Abstract: There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.

Abstract: There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

Abstract: According to one of the embodiments of the present disclosure, there is provided a technique that includes: (a) forming a seed layer in an amorphous state on a substrate by supplying a source gas to the substrate; (b) polycrystallizing the seed layer by processing the seed layer by heat; and (c) performing a cycle a predetermined number of times to form an oxide film on a polycrystallized seed layer and to oxidize the polycrystallized seed layer, the cycle including: (c-1) supplying the source gas to the substrate; and (c-2) supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate, wherein (c-1) and (c-2) are non-simultaneously performed.

Abstract: There is provided a technique that includes: forming an oxynitride film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a precursor supply part to the at least one substrate; (b) supplying an oxidizing agent from an oxidizing agent supply part to the at least one substrate; and (c) supplying a nitriding agent from a nitriding agent supply part to the at least one substrate, wherein in (b), an inert gas is supplied from an inert gas supply part, which is different from the oxidizing agent supply part, to the at least one substrate, and at least one of nitrogen concentration and refractive index of the oxynitride film formed on the at least one substrate is adjusted by controlling a flow rate of the inert gas.

Abstract: A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate through a first nozzle in the manifold extending upward to an inside of the reaction tube, and supplying an oxidizing gas to the substrate through a second nozzle in the manifold extending upward to the inside of the reaction tube; and (b) cleaning an inside of the process chamber. The step (b) includes a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold.

Abstract: A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.

Abstract: According to one of the embodiments of the present disclosure, there is provided a technique that includes: (a) forming a seed layer in an amorphous state on a substrate by supplying a source gas to the substrate; (b) polycrystallizing the seed layer by processing the seed layer by heat; and (c) performing a cycle a predetermined number of times to form an oxide film on a polycrystallized seed layer and to oxidize the polycrystallized seed layer, the cycle including: (c-1) supplying the source gas to the substrate; and (c-2) supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate, wherein (c-1) and (c-2) are non-simultaneously performed.

Abstract: There is provided a technique that includes: a main controller configured to execute a process recipe including a plurality of steps to perform a predetermined process on a substrate so as to acquire device data when executing the process recipe; and a storage part configured to store the acquired device data, wherein the main controller is configured to: acquire the device data in a predetermined specific step among the steps constituting the process recipe; calculate a value of the acquired device data in the specific step; compare the calculated value with a value of the device data in the specific step calculated at a time of previous execution of the process recipe; and generate an alarm when the calculated value shows a predefined tendency.

Abstract: There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.

Abstract: A technique capable of controlling a film thickness distribution formed on a surface of a substrate includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source to the substrate accommodated in a process chamber; (b) exhausting the source from the process chamber; (c) supplying a reactant to the substrate accommodated in the process chamber; and (d) exhausting the reactant from the process chamber, wherein (a) through (d) are performed non-simultaneously, and the cycle further includes at least one of: (e) starting a next step with the source remaining in a center portion of a substrate surface after a first predetermined time elapses from a start of (b); and (f) starting a next step with the reactant remaining in the center portion of the substrate's surface after a second predetermined time elapses from a start of (d).

Abstract: A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).