Abstract: An anchor support member supports an anchor bolt provided to the foundation of a building, and comprises: an attaching part that is attached to a formwork of the foundation; a retaining part that is connected to the attaching part and retains the anchor bolt; and a securing part that secures the attaching part to the formwork. The securing part secures the attaching part to the formwork such that the position of the anchor support member can be adjusted in a prescribed direction.

Abstract: In a semiconductor device, a drive circuit is used to supply a drive signal in an ultrasonic band to a piezoelectric element, and thereafter through a brake operation, a damping signal having a phase different from the phase of the drive signal is supplied to the piezoelectric element. The drive circuit includes a full bridge circuit provided between a first line and a second line. In the brake operation, two switches on the side of the first line in the full bridge circuit are turned on or two switches on the side of the second line in the full bridge circuit are turned on.

Abstract: A semiconductor device includes a driving circuit arranged to be capable of supplying a drive signal in an ultrasonic band to a piezoelectric element, a damping circuit having a resistance load and an inductive load, and a control circuit arranged to be capable of controlling the driving circuit and performing a reverberation reduction operation after stopping the supply of the drive signal to the piezoelectric element. In the reverberation reduction operation, the control circuit controls the driving circuit to supply the piezoelectric element with a damping signal having a phase different from that of the drive signal, and then enables the damping circuit to connect to the piezoelectric element.

Abstract: A switch monitoring device includes a constant current source which supplies a current to an input line or extracts a current from the input line, a switch which connects the input line to a supply voltage or to a ground voltage, a comparator which compares a voltage on the input line with a reference voltage, a logic which receives an output voltage of the comparator, a base current source which generates a base current, and a bias current circuit which generates a bias current by adjusting the base current as a base in accordance with a current control signal from the logic and the output voltage of the comparator. The constant current source generates a current by adjusting the bias current as a base.

Abstract: A switch monitoring device includes a constant current source which supplies a current to an input line or extracts a current from the input line, a switch which connects the input line to a supply voltage or to a ground voltage, a comparator which compares a voltage on the input line with a reference voltage, a logic which receives an output voltage of the comparator, a base current source which generates a base current, and a bias current circuit which generates a bias current by adjusting the base current as a base in accordance with a current control signal from the logic and the output voltage of the comparator. The constant current source generates a current by adjusting the bias current as a base.

Abstract: A switch state detection circuit according to the present invention comprises: a plurality of switch connection portions to each of which a switch is connected, a connection line to which any one of the switch connection portions is connected in a switchable manner, a detection portion that detects a state of the switch connected to the connection line based on a state of the connection line, and a connection control portion that switches successively each of the switch connection portions and connects it to the connection line, wherein the state of each switch is detected.

Abstract: A circuit control device for controlling power consumption of a plurality of circuit units includes a monitoring unit configured to monitor whether a detection temperature of each of the circuit units meets a predetermined overheat condition, and an overheat protection unit configured to execute an overheat protection operation when the overheat condition is met in any one of the circuit units, wherein the overheat protection operation is an operation to reduce power consumption of an overheat unit meeting the overheat condition, among the circuit units, and a neighbor unit disposed near the overheat unit.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10) including a support substrate (11) dissoluble in hydrofluoric acid and a single crystal film (13) arranged on a side of a main surface (11m) of the support substrate (11), a coefficient of thermal expansion in the main surface (11m) of the support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film (20) on a main surface (13m) of the single crystal film (13) arranged on the side of the main surface (11m) of the support substrate (11), and removing the support substrate (11) by dissolving the support substrate (11) in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: A switch state detection circuit according to the present invention comprises: a plurality of switch connection portions to each of which a switch is connected, a connection line to which any one of the switch connection portions is connected in a switchable manner, a detection portion that detects a state of the switch connected to the connection line based on a state of the connection line, and a connection control portion that switches successively each of the switch connection portions and connects it to the connection line, wherein the state of each switch is detected.

Abstract: A circuit control device for controlling power consumption of a plurality of circuit units includes a monitoring unit configured to monitor whether a detection temperature of each of the circuit units meets a predetermined overheat condition, and an overheat protection unit configured to execute an overheat protection operation when the overheat condition is met in any one of the circuit units, wherein the overheat protection operation is an operation to reduce power consumption of an overheat unit meeting the overheat condition, among the circuit units, and a neighbor unit disposed near the overheat unit.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.

Abstract: A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

Abstract: A composite GaN substrate of the present invention includes: a conductive GaN substrate having a specific resistance of less than 1 ?cm; and a semi-insulative GaN layer disposed on the conductive GaN substrate, having a specific resistance of 1×104 ?cm or more, and having a thickness of 5 ?m or more. A group III nitride semiconductor device of the present invention includes: the above-described composite GaN substrate; and at least one group III nitride semiconductor layer disposed on the semi-insulative GaN layer of the composite GaN substrate. In this way, there can be obtained the composite GaN substrate and the group III nitride semiconductor device each having a high characteristic with reasonable cost.

Abstract: A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.

Abstract: Provided is a flexible printed circuit board having excellent flexibility and a diffusely reflective white surface (white surface) which does not tend to undergo color change even when irradiated with light such as short-wavelength light, i.e., has high light deterioration resistance, and does not tend to undergo color change even when placed in a high-temperature environment, i.e., has excellent thermal deterioration resistance. The white reflective flexible printed circuit board includes a flexible printed circuit board and a surface constituted by a white reflective material layer. The white reflective material layer is composed of a resin composition containing a fluororesin and an inorganic white pigment. Lighting equipment includes the white reflective flexible printed circuit board and an LED mounted on the surface side constituted by the white reflective material layer of the white reflective flexible printed circuit board.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.