Abstract: A light source unit (100) switches one or more of light source groups (P, Q, R), each comprising one or more of light sources (110), ON and OFF for each light source group or each light source. The light source unit (100) includes: a flexible printed wiring board (120); one or more of light source groups (P, Q, R) mounted on a first surface of the flexible printed wiring board (120); and a metal support plate (130) attached to a second surface on the opposite side to the first surface of the flexible printed wiring board (120) via an adhesive layer (140). The heat conductivity of the adhesive layer (140) in the vertical direction is set so as to be less than the heat conductivity in a base material layer (121) of the flexible printed wiring board (120) in the vertical direction.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.

Abstract: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.

Abstract: An object is to obtain a module in which an optical fiber can be inserted after a ferrule has been mounted on a circuit board. There is provided an optical module (100) in which at least a ferrule (33) and an electric component (57) are mounted on a circuit board (35) on which external electrodes (63) have been mounted; a fiber through-hole is formed in the ferrule (33) in a position in which the optoelectric conversion device (31) is mounted on one end surface and that corresponds to an active layer of an optoelectric conversion device (31); and the optoelectric conversion device (31) of the ferrule (33) is electrically connected to the electric component (57). In the ferrule (33), an opening in the one end face of the fiber through-hole that faces the optoelectric conversion device (31) is blocked by a transparent substance (61), and a portion that excludes the fiber through-hole at the other end surface is are monolithically covered with a molding resin (55).

Abstract: A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.

Abstract: There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1?X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1?X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1?X1N layer to form a patterned InX1Ga1?X1N layer; and growing an AlX2Ga1?X2N (0?X2?1) layer on a top surface of the patterned InX1Ga1?X1N layer to form voids associated with the openings.

Abstract: A semiconductor light-emitting device 100 includes a semiconductor layer 2 including an active layer, a supporting substrate 11 for supporting the semiconductor layer 2, and an attachment layer 15 for bonding a main surface of the semiconductor layer 2 onto a main surface of the supporting substrate 11. A two-dimensional diffraction grating is formed in a bonding interface region between the attachment layer and at least one of the main surface of the semiconductor layer 2, the main surface opposing the attachment layer 15, and the main surface of the supporting substrate 11, the main surface opposing the attachment layer 15, the two-dimensional diffraction grating including at least two types of materials having different refractive indices and being arranged periodically.

Abstract: An object is to obtain a module in which an optical fiber can be inserted after a ferrule has been mounted on a circuit board. There is provided an optical module (100) in which at least a ferrule (33) and an electric component (57) are mounted on a circuit board (35) on which external electrodes (63) have been mounted; a fiber through-hole is formed in the ferrule (33) in a position in which the optoelectric conversion device (31) is mounted on one end surface and that corresponds to an active layer of an optoelectric conversion device (31); and the optoelectric conversion device (31) of the ferrule (33) is electrically connected to the electric component (57). In the ferrule (33), an opening in the one end face of the fiber through-hole that faces the optoelectric conversion device (31) is blocked by a transparent substance (61), and a portion that excludes the fiber through-hole at the other end surface is are monolithically covered with a molding resin (55).

Abstract: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.

Abstract: A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.

Abstract: There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1-X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1-X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1-X1N layer to form a patterned InX1Ga1-X1N layer; and growing an AlX2Ga1-X2N (0?X2?1) layer on a top surface of the patterned InX1Ga1-X1N layer to form voids associated with the openings.

Abstract: A semiconductor laser device (1) includes: a substrate (3) having a principal plane (3a); a photonic crystal layer (7) having an epitaxial layer (2a) of gallium nitride formed on substrate (3) in a direction in which principal plane (3a) extends and a low refractive index material (2b) having a refractive index lower than that of epitaxial layer (2a); an n-type clad layer (4) formed on substrate (3); a p-type clad layer (6) formed on substrate (3); an active layer (5) that is interposed between n-type clad layer (4) and p-type clad layer (6) and emits light when a carrier is injected thereinto; and a GaN layer (12) that covers a region directly on photonic crystal layer (7). Thus, the semiconductor laser device can be manufactured without fusion.

Abstract: A light-emitting layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation.

Abstract: A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation. Particularly, the method involves placing a substrate in a vacuum chamber, placing a target of the film material in the chamber, introducing oxygen into the chamber, laser-irradiating the target to emit atoms or molecular ions by ablation, and then depositing and oxidizing the atoms or ions to grow the transparent conductor film.

Abstract: A ZnSe light emitting device emitting light from an output face comprises an n-type ZnSe substrate including self-activated radiative recombination centers (SA), an active layer formed en above the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, and the chromaticity of the white light emitting device can be easily adjusted.

Abstract: A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted oil the electrode body, the ZnSe substrate is placed directly on tile melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and tile ZnSe substrate.

Abstract: A light emission apparatus includes: an electrode; a LED mounted on the electrode with an indium layer interposed therebetween, the LED having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal comprising ZnSe serving as a matrix, the epitaxial light emission structure being provided on the substrate and emitting light when an electric current is introduced thereinto; and resin encapsulating the LED, the resin having a glass transition temperature of lower than 80 degrees centigrade or being soft to be still elastic in a vicinity of the LED at room temperature.

Abstract: The present invention provide a light emitting device including: a resin base having a patterned interconnection; an n-type ZnSe substrate mounted on the resin base; an epitaxial light emission structure formed of a compound crystal relating to ZnSe serving as a matrix, formed on the ZnSe substrate and emitting light when an electric current is applied. A reflector is so constructed and positioned that a spatial distribution of the light emission intensity of the fluorescence light approximates the light emission intensity of the epitaxial light emission structure. The fluorescence light is produced in the ZnSe substrate excited by with the light emission from the epitaxial light emission structure.

Abstract: A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation. Particularly, the method involves placing a substrate in a vacuum chamber, placing a target of the film material in the chamber, introducing oxygen into the chamber, laser-irradiating the target to emit atoms or molecular ions by ablation, and then depositing and oxidizing the atoms or ions to grow the transparent conductor film.