Abstract: An apparatus for displaying system management information includes a combination storing unit that stores display pattern information that is obtained by combining, in subjective basis, system management information provided by a plurality of system management units; and a combination display unit that combines the system management information based on the display pattern stored in the combination storing unit, and displays the system management information combined.

Abstract: A semiconductor device comprises a first base layer for providing a PT-IGBT or IEGT structure, which includes a buffer layer and a collector layer provided in the buffer layer. A first activation rate, defined by an activated first conductivity type impurity density [cm−2] in the buffer layer due to SR analysis/a first conductivity type impurity density [cm−2] in the buffer layer due to SIMS analysis is given by 25% or more, and a second activation rate, defined by an activated second conductivity type impurity density [cm−2] in the collector layer due to SR analysis/a second conductivity type impurity density [cm−2] in the collector layer duet to SIMS analysis is given by more than 0% and 10% or less.

Abstract: A laser heating apparatus for forming an electrode on one surface of an Si chip provided on an Si wafer, thereby producing a semiconductor element, comprises a high vacuum chamber having a light transmission window, an XY table contained in the high vacuum chamber for mounting the Si wafer thereon, heater contained in the high vacuum chamber for heating and evaporating an impurity in a solid state, and laser beam applying means for applying a laser beam to the Si chip placed on the XY table from the outside of the high vacuum chamber through the light transmission window, thereby implanting the impurity into the Si in chip and activating the implanted impurity.

Abstract: An N+ buffer layer formed on the underside of an N− layer includes an inactive region having incompletely activated ions and an active region having highly activated ions. The carrier concentration of the active region is higher than that of the inactive region. In the inactive region, the electrical activation rate X of the ions is expressed as 1%≦X≦30%. It is thus possible to achieve a PT structure using a Raw wafer, which reduces manufacturing costs and suppresses power consumption.

Abstract: A semiconductor device comprises a first base layer for providing a PT-IGBT or IEGT structure, which includes a buffer layer and a collector layer provided in the buffer layer. A first activation rate, defined by an activated first conductivity type impurity density [cm−2] in the buffer layer due to SR analysis/a first conductivity type impurity density [cm−2] in the buffer layer due to SIMS analysis is given by 25% or more, and a second activation rate, defined by an activated second conductivity type impurity density [cm−2] in the collector layer due to SR analysis/a second conductivity type impurity density [cm−2] in the collector layer duet to SIMS analysis is given by more than 0% and 10% or less.

Abstract: An insulated gate bipolar transistor is disclosed, which comprises a first conductivity type base layer, a second conductivity type base layer and an emitter layer which are selectively formed in an upper surface of the first conductivity type base layer, a buffer layer and a collector layer which are formed on a back surface of the first conductivity type base layer. A requirement of d2/d1>1.5 is satisfied, where d1 is a depth in the buffer layer, as measured from an interface of the buffer layer and the collector layer, at which a first conductivity type impurity concentration in the buffer layer shows a peak value, and d2 is a shallowest depth in the buffer layer, as measured from the interface of the buffer layer and the collector layer, at which an activation ratio of the first conductivity type impurity in the buffer layer is a predetermined value.

Abstract: A load distribution system which is capable of carrying out appropriate load distributing on a WWW system. A server status notification section provided for each server subject to management collects processing requests sent to each server. A server status management section obtains the amount of processing of each server collected by the server status notification section to manage a load status of each server. A request distribution section within a client system obtains load information on the load status of each server from the server status management section. A request relay section delivers a server selection request when a processing request is generated by the client system. In response to the server selection request, the request distribution section determines a server experiencing less load, based on the load information.

Abstract: A current blocking layer (7) formed immediately below a transparent electrode (9) is formed of a semiconductor layer containing Al, and a bandgap equal to or longer than the emission wavelength. Since the current blocking layer (7) is formed of such semiconductor layer, an oxide film forms on or near the surface of the current blocking layer (7) in a process of forming the transparent electrode (9) such as an ITO film containing oxygen, and the current blocking layer functions effectively. The diameter of a bonding electrode (20) is set to be smaller than that of the current blocking layer (7), thus effectively outputting the light emitted. Furthermore, the oxidized current blocking layer can have a high breakdown voltage and, hence, can be formed to have a small thickness, thus improving step coverage upon forming the transparent electrode on the current blocking layer. By inserting a thin Zn layer (8) between the transparent electrode (9) and an ohmic layer (6), the adhesion therebetween can be improved.

Abstract: A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer (10) is formed. On the current blocking layer, an excitation electrode (20) is formed. A substrate electrode (9) is formed on a second principal plane of the substrate. The excitation electrode is composed of a bonding pad (21) and a current supply electrode (22). The current blocking layer is under the bonding pad. The current blocking layer prevents a current from flowing under the bonding pad. The current supply electrode improves the light emission efficiency of the device.

Abstract: A semiconductor light-emitting element has a crystal layer formed from aluminum of a high mol ratio of 60% or greater on the light producing surface. In the semiconductor light-emitting element, a conductive crystal with aluminum of a mol ratio of 50% or less, or a conductive crystal containing no aluminum is formed on the high aluminum crystal layer.

Abstract: A data processing system for executing a parallel processing of programs by a plurality of computers, includes a plurality of parallel processing execution units for dividing a predetermined processing into a plurality of processings and a plurality of computers for executing a parallel processing of the parallel processing execution unit. In addition, a plurality of wait-until procedure units are provided for synchronization therewith between the plurality of computers in the case of executing a parallel processing. One computer assigns a value to a synchronous variable in the course of synchronous processing between the processors, to vary the value of the synchronous variable regularly, and another computer is adapted to suspend operations using a wait-until procedure until a value of a synchronous variable surpasses a predetermined value. Thus, the invention reduces an overhead time of the synchronous processing by effectively executing a parallel processing of programs.

Abstract: A semiconductor light-emitting element has a crystal layer formed from aluminum of a high mol ratio of 60% or greater on the light producing surface. In the semiconductor light-emitting element, a conductive crystal with aluminum of a mol ratio of 50% or less, or a conductive crystal containing no aluminum is formed on the high aluminum crystal layer.