Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

Abstract: A method for producing an activated Fischer-Tropsch synthesis catalyst comprising a hydrogen reduction step of subjecting a catalyst comprising 3 parts by mass to 50 parts by mass, as a metal atom, of a cobalt compound and/or a ruthenium compound, based on 100 parts by mass of a carrier containing a porous inorganic oxide, supported on the carrier, to reduction in a gas containing molecular hydrogen at a temperature of 300° C. to 600° C.; and a CO reduction step of subjecting the catalyst to reduction in a gas containing carbon monoxide and containing no molecular hydrogen at a temperature of 200° C. to 400° C.

Abstract: The hydroisomerization catalyst of the present invention is a catalyst used for hydroisomerization of a hydrocarbon, including a support including a calcined zeolite modified with at least one metal selected from the group consisting of Na, K, Cs, Mg, Ca, Ba, and K, and having a thermal history that includes heating at 350° C. or more, and at least one inorganic oxide selected from the group consisting of alumina, silica, titania, boria, zirconia, magnesia, ceria, zinc oxide, phosphorus oxide, and a composite oxide containing a combination of at least two or more of these oxides; and at least one metal supported on the support and selected from the group consisting of elements belonging to Groups 8 to 10 of the periodic table, molybdenum and tungsten.

Abstract: A Fischer-Tropsch synthesis catalyst containing 10 to 30% by mass, as a metal atom, of metallic cobalt and/or cobalt oxide, based on the mass of the catalyst, supported on a carrier containing silica, in which the carrier has an average pore diameter of 8 to 25 nm and the metallic cobalt and/or cobalt oxide has an average crystallite diameter of not less than the average pore diameter of the carrier and less than 35 nm.

Abstract: A semiconductor element includes: an organic semiconductor layer; an electrode disposed on the organic semiconductor layer so as to be in contact with the organic semiconductor layer; and a wiring layer formed separately from the electrode and electrically connected to the electrode.

Abstract: A method for producing a regenerated Fischer-Tropsch synthesis catalyst obtained by regenerating a spent catalyst used in a Fischer-Tropsch synthesis reaction, comprising a steaming step of bringing the above spent catalyst into contact with a mixed gas comprising 1 to 30% by volume of steam and an inert gas at a pressure of atmospheric pressure to 5 MPa and a temperature of 150 to 350° C., the above spent catalyst being a spent catalyst in which cobalt and/or ruthenium is supported on a carrier comprising silica with an average pore diameter measured by a nitrogen adsorption method of 4 to 25 nm, and of which activity represented by an initial carbon monoxide conversion is 40 to 95%, based on the activity of a corresponding unused catalyst.

Abstract: A semiconductor element including an organic semiconductor layer and a layer disposed on the upper surface of the organic semiconductor layer, wherein the outline of the layer is inside the outline of the organic semiconductor layer.

Abstract: Provided are a sintered ceramic and a ceramic sphere which are inhibited from suffering surface peeling due to fatigue resulting from repetitions of loading and can attain an improvement in dimensional accuracy when subjected to surface processing and which have excellent wear resistance and durability. A ceramic-sphere inspection device is also provided with which a ceramic sphere is inspected for a flaw present in the surface layer and for snow flakes without destroying the ceramic sphere. The device is a ceramic-sphere inspection device (100) in which a ceramic sphere (S) is rotatably supported in a given position and illuminating light emitted from a light projector (110) is detected with a light receiver (120) to evaluate the state of the inner part of the surface layer, and has been configured so that the light receiver (120) does not detect the light emitted from the light projector (110) and reflected at the surface of the ceramic sphere.

Abstract: There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

Abstract: Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.

Abstract: A method for producing an aviation fuel oil base includes obtaining a first generated oil by hydrotreating a feedstock by bringing a feedstock which includes an oxygen-containing hydrocarbon compound derived from an animal or vegetable oils and fat into contact with a first dual functional catalyst which has dehydrogenation and hydrogenation functions and which includes a metal of group 6A of the periodic table, a metal of group 8, and an amorphous solid acidic substance, in the presence of hydrogen; and obtaining a second generated oil including an aviation fuel oil base by hydroisomerizing the first generated oil by bringing the first generated oil into contact with a second dual functional catalyst which has dehydrogenation and hydrogenation functions and which includes a metal of the group 8 of the periodic table and a crystalline solid acidic substance, in the presence of hydrogen.

Abstract: A method for producing a lubricant base oil includes contacting feedstock containing normal paraffins having not less than 20 carbon atoms with a first catalyst in the presence of molecular hydrogen to obtain a first produced oil, and contacting the first produced oil with a second catalyst in the presence of molecular hydrogen to obtain a second produced oil. The first catalyst includes a first carrier in which a fraction of an amount of NH3 to be desorbed at 300 to 800° C. based on a total amount of NH3 to be desorbed is 80 to 90% in temperature-programmed desorption of NH3, a first metal selected from metals of Group VI in the periodic table carried on the first carrier, and a second metal selected from metals of Group VIII to Group X in the periodic table carried on the first carrier.

Abstract: The aviation fuel oil base of the present invention is obtained by hydrotreating an oil to be treated containing an oxygen-containing hydrocarbon compound derived from an animal or vegetable oils and fat and a sulfur-containing hydrocarbon compound and then hydroisomerizing the resultant hydrotreated oil, wherein a yield of a fraction having a boiling range of 140 to 300° C. is 70 mass % or more; an isoparaffin content is 80 mass % or more; a content of isoparaffin having 2 or more branches is 17 mass % or more; an aromatic content is less than 0.1 vol %; an olefin content is less than 0.1 vol %; a sulfur content is less than 1 mass ppm; and an oxygen content is less than 0.1 mass %.

Abstract: The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.

Abstract: There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

Abstract: The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.

Abstract: A negative electrode active material of lithium secondary battery includes: at least one of a petroleum-derived green coke and a coal-derived green coke, and at least one of a petroleum-derived calcined coke and a coal-derived calcined coke within a mass ratio range of 90:10 to 10:90, and a phosphorous compound within a range of 0.1 to 6.0 parts by mass in amount equivalent to phosphor relative to 100 parts by mass of the at least one of the green cokes and the at least one of the calcined cokes.

Abstract: There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

Abstract: Suppressing profile loss of a moving blade due to radial flow without an increase in the length of a shaft of a turbine is disclosed. The degree of reaction on an inner circumferential side is set to an appropriate degree, reducing profile loss due to supersonic inflow, and improving turbine efficiency. A steam turbine stator vane has a trailing edge with a curved line when the stator vane is viewed from a downstream side in the axial direction. The curved line has an inflection point located on an outer circumferential side with respect to the center of the stator vane in the height direction of the stator vane. An inner circumferential portion of the curved line is located on the inner circumferential side with respect to the inflection point. An outer circumferential portion of the curved line is located on the outer circumferential side with respect to the inflection point.