Patents by Inventor Hideki Ono
Hideki Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8081708Abstract: A reradiation apparatus for terrestrial digital broadcasting includes plural antennas provided on a train and mutually spaced along the running direction of the train, plural receiving processing parts provided corresponding to the antennas, a master selecting part which sets the receiving processing part corresponding to the antenna provided at the rear of the train as a master receiving processing part, a monitoring part which monitors a received state of the terrestrial digital broadcasting signal received by the master receiving processing part and outputs a supervisory signal, a switching part, and a reradiation unit. The switching part chooses the terrestrial digital broadcasting signal received by the master receiving processing part or the terrestrial digital broadcasting signal received by another receiving processing part based on the supervisory signal output by the monitoring part. The reradiation unit reradiates the chosen terrestrial digital broadcasting signal in the train.Type: GrantFiled: October 27, 2008Date of Patent: December 20, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masaru Mitsuhashi, Hideki Ono
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Publication number: 20110267737Abstract: The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.Type: ApplicationFiled: June 10, 2011Publication date: November 3, 2011Applicants: NIPPON PETROLEUM REFINING COMPANY, LIMITED, NIPPON OIL CORPORATIONInventors: Takashi OYAMA, Kazuhisa NAKANISHI, Tamotsu TANO, Keiji HIGASHI, Ippei FUJINAGA, Hiromitsu HASHISAKA, Toshitaka FUJII, Takashi NORO, Akio SAKAMOTO, Kiwamu TAKESHITA, Keizou IKAI, Masaki FUJII, Hideki ONO
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Publication number: 20110253593Abstract: The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.Type: ApplicationFiled: June 10, 2011Publication date: October 20, 2011Applicants: NIPPON PETROLEUM REFINING COMPANY, LIMITED, NIPPON OIL CORPORATIONInventors: Takashi OYAMA, Kazuhisa NAKANISHI, Tamotsu TANO, Keiji HIGASHI, Ippei FUJINAGA, Hiromitsu HASHISAKA, Toshitaka FUJII, Takashi NORO, Akio SAKAMOTO, Kiwamu TAKESHITA, Keizou IKAI, Masaki FUJII, Hideki ONO
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Publication number: 20110236189Abstract: Whirl flow of leakage flow is reduced to reduce the occurrence potential of steam whirl. A rotor oscillation preventing structure for a steam turbine includes: a stator vane 3; a moving blade 1; a shroud cover 2 installed on an outer circumferential side distal end of the moving blade 1; and a plurality of seal fins 6 installed, at any interval in the axial direction of a rotor, on an wall surface of a stationary body located on an outer circumferential side of the shroud cover 2, a whirl preventing structure comprised of whirl preventing plates 9 or whirl preventing grooves 11 is provided at a shroud cover inlet return portion 10 of the shroud cover 2 so as to block the whirl flow of leakage flow 8 on an upstream side in an operating steam flow direction of the seal fins to reduce an absolute velocity component of the leakage flow 8 in a rotational direction of the rotor.Type: ApplicationFiled: February 15, 2011Publication date: September 29, 2011Applicant: Hitachi, Ltd.Inventors: Hideki ONO, Takeshi KUDO, Kenichi MURATA, Masataka SONOBE, Tsutomu SUGIYAMA
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Publication number: 20110237853Abstract: A method for manufacturing a hydrocarbon oil, comprising: a first step wherein a feedstock oil containing an oxygen-containing organic compound and a water-insoluble chlorine-containing compound is brought into contact with a hydrogenation catalyst comprising a support containing a porous inorganic oxide and one or more metals selected from Group VIA and Group VIII of the periodic table supported on the support in the presence of hydrogen to generate a hydrocarbon oil and water in a vapor state by the hydrodeoxygenation of an oxygen-containing organic compound and convert the water-insoluble chlorine-containing compound into a water-soluble chlorine-containing compound; a second step wherein the water in the reaction product of the first step is maintained in a vapor state and the reaction product of the first step is brought into contact with a nitrogen-containing Brønsted base compound which has a boiling point at normal pressure of 100° C.Type: ApplicationFiled: September 16, 2009Publication date: September 29, 2011Applicant: JX NIPPON OIL & ENERGY CORPORATIONInventors: Tatsuo Hamamatsu, Hideki Ono, Yasutoshi Iguchi, Hideshi Iki, Yoshihiko Kinoshita
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Publication number: 20110215406Abstract: A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.Type: ApplicationFiled: February 17, 2011Publication date: September 8, 2011Applicant: SONY CORPORATIONInventors: Hideki Ono, Akihiro Nomoto, Iwao Yagi
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Publication number: 20110218376Abstract: The method for manufacturing a hydrocarbon oil of the present invention comprises a first step wherein a plurality of reaction zones filled with a specific catalyst is disposed in series and a feedstock oil containing an oxygen-containing hydrocarbon compound derived from an animal or vegetable oil is supplied and hydrotreated under the conditions of a hydrogen pressure of 1 MPa or more and 10 MPa or less in each of the reaction zones; and a second step wherein hydrogen, hydrogen sulfide, carbon dioxide and water are removed from a product to be treated obtained in the first step to obtain a hydrocarbon oil. Among the plurality of reaction zones, the inlet temperature of the reaction zone disposed on the most upstream side is 150° C. or more and 250° C. or less, the inlet temperature of the second most upstream reaction zone or below is equal to or higher than the condensation temperature of water, and the outlet temperature of the reaction zone disposed on the most downstream side is 260° C.Type: ApplicationFiled: September 16, 2009Publication date: September 8, 2011Applicant: JX NIPPON OIL & ENERGY CORPORATIONInventors: Yasutoshi Iguchi, Tatsuo Hamamatsu, Hideki Ono, Akira Koyama, Hideshi Iki
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Publication number: 20110204375Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.Type: ApplicationFiled: February 16, 2011Publication date: August 25, 2011Applicant: Sony CorporationInventors: Iwao YAGI, Hideki ONO, Mari SASAKI
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Patent number: 7993619Abstract: The present invention provides a raw oil composition for manufacturing a carbon material for electric double layer capacitor electrodes, characterized in that the raw oil composition comprises 25 wt % or more of a saturated component and 16 wt % or less of an asphaltene component among the saturated component, an aromatic component, a resin component, and the asphaltene component obtained by developing of the raw oil composition by thin-layer chromatography; the raw oil composition has an average molecular weight of 960 or less; and the raw oil composition has an aromatic-carbon-fraction (fa) of 0.22 to 0.72. Use of the raw oil composition provides a carbon material for electric double layer capacitor electrodes that can exhibit high capacitance with high reproducibility without manufacturing synthetic pitch.Type: GrantFiled: June 15, 2006Date of Patent: August 9, 2011Assignee: Nippon Oil CorporationInventors: Tamotsu Tano, Takashi Oyama, Ippei Fujinaga, Hideki Ono, Masaki Fujii
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Patent number: 7964173Abstract: The present invention provides feedstock compositions for use of the production of an activated carbon for electric double layer capacitor electrodes or the production of needle coke, comprising a first heavy oil with an initial boiling point of 300° C. or higher, an asphalten content of 12 percent by mass or less, a saturate content of 50 percent by mass or more and a sulfur content of 0.3 percent by mass or less, produced as a residue resulting from vacuum-distillation of a petroleum-based oil and a second heavy oil with an initial boiling point of 150° C. or higher and a sulfur content of 0.5 percent by mass or less, produced by subjecting a hydrocarbon oil to fluidized catalytic cracking.Type: GrantFiled: December 27, 2006Date of Patent: June 21, 2011Assignees: Nippon Oil Corporation, Nippon Petroleum Refining Company, LimitedInventors: Takashi Oyama, Kazuhisa Nakanishi, Tamotsu Tano, Keiji Higashi, Ippei Fujinaga, Hiromitsu Hashisaka, Kiwamu Takeshita, Masaki Fujii, Hideki Ono
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Patent number: 7959888Abstract: The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.Type: GrantFiled: December 27, 2006Date of Patent: June 14, 2011Assignees: Nippon Oil Corporation, Nippon Petroleum Refining Company, LimitedInventors: Takashi Oyama, Kazuhisa Nakanishi, Tamotsu Tano, Keiji Higashi, Ippei Fujinaga, Hiromitsu Hashisaka, Toshitaka Fujii, Takashi Noro, Akio Sakamoto, Kiwamu Takeshita, Keizou Ikai, Masaki Fujii, Hideki Ono
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Publication number: 20110101358Abstract: Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.Type: ApplicationFiled: October 28, 2010Publication date: May 5, 2011Applicant: SONY CORPORATIONInventors: Akihiro Nomoto, Hideki Ono
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Publication number: 20110081746Abstract: A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.Type: ApplicationFiled: September 23, 2010Publication date: April 7, 2011Applicant: SONY CORPORATIONInventors: Akihiro Nomoto, Hideki Ono
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Publication number: 20100232966Abstract: In a steam turbine including a turbine rotor 7; a moving blade 1 secured to the turbine rotor 7; a shroud 3 provided on an outer circumferential side distal end of the moving blade 1; and an outer circumferential side stationary wall 4 internally embracing the turbine rotor 7 and forming an outer circumferential side passage wall of a steam path, the shroud 3 has an inner circumferential surface 14 so formed that a moving blade outlet flare angle ?3 is greater than a moving blade inlet flare angle ?2; an angle ?1 formed between the outer circumferential side stationary wall 4 and the turbine central axis 50 is generally equal to the moving blade inlet flare angle ?2; and an angle ?4 formed between the outer circumferential side stationary wall and an turbine central axis 50 is generally equal to the moving blade outlet flare angle ?3.Type: ApplicationFiled: February 17, 2010Publication date: September 16, 2010Applicant: HITACHI, LTD.Inventors: Hideki ONO, Shunsuke MIZUMI, Kenichi MURATA
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Raw-material carbon composition for carbon material for electrode of electric double-layer capacitor
Patent number: 7754178Abstract: The capacitance per volume of an electric double-layer capacitor can be increased by using a raw-material carbon composition for use in a carbon material for an electrode of the electric double-layer capacitor by applying an activation process, characterized in that the raw-material carbon composition has a volatile content of 1.3% by mass to 15% by mass (both inclusive), and microstrength of 5 to 30% when the volatile content is less than 6% by mass while microstrength of 5 to 20% when the volatile content is 6% or more.Type: GrantFiled: August 12, 2005Date of Patent: July 13, 2010Assignee: Nippon Oil CorporationInventors: Tamotsu Tano, Takashi Oyama, Hideki Ono, Keizo Ikai, Kiwamu Takeshita -
Patent number: 7709353Abstract: A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.Type: GrantFiled: August 16, 2007Date of Patent: May 4, 2010Assignee: Sony CorporationInventors: Hideki Ono, Satoshi Taniguchi
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Publication number: 20090268375Abstract: The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.Type: ApplicationFiled: December 27, 2006Publication date: October 29, 2009Applicants: NIPPON OIL CORPORATION, NIPPON PETROLEUM REFINING COMPANY, LIMITEDInventors: Takashi Oyama, Kazuhisa Nakanishi, Tamotsu Tano, Keiji Higashi, Ippei Fujinaga, Hiromitsu Hashisaka, Toshitaka Fujii, Takashi Noro, Akio Sakamoto, Kiwamu Takeshita, Keizou Ikai, Masaki Fujii, Hideki Ono
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Publication number: 20090253249Abstract: There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.Type: ApplicationFiled: March 3, 2009Publication date: October 8, 2009Applicant: SONY CORPORATIONInventors: Satoshi Taniguchi, Nobuhiro Suzuki, Hideki Ono
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Publication number: 20090237860Abstract: The present invention provides feedstock compositions for use of the production of an activated carbon for electric double layer capacitor electrodes or the production of needle coke, comprising a first heavy oil with an initial boiling point of 300° C. or higher, an asphalten content of 12 percent by mass or less, a saturate content of 50 percent by mass or more and a sulfur content of 0.3 percent by mass or less, produced as a residue resulting from vacuum-distillation of a petroleum-based oil and a second heavy oil with an initial boiling point of 150° C. or higher and a sulfur content of 0.5 percent by mass or less, produced by subjecting a hydrocarbon oil to fluidized catalytic cracking.Type: ApplicationFiled: December 27, 2006Publication date: September 24, 2009Applicants: NIPPON OIL CORPORATION, NIPPON PETROLEUM REFINING COMPANY, LIMITEDInventors: Takashi Oyama, Kazuhisa Nakanishi, Tamotsu Tano, Keiji Higashi, Ippei Fujinaga, Hiromitsu Hashisaka, Kiwamu Takeshita, Masaki Fujii, Hideki Ono
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Raw material carbon composition for carbon material for electrode in electric double layer capacitor
Patent number: 7582902Abstract: The present invention provides a raw material carbon composition that is converted to a carbon material for an electrode in an electric double layer capacitor that can develop a high level of electrostatic capacity with good reproducibility without producing any synthetic pitch. The raw material carbon composition is converted to a carbon material for an electrode in an electric double layer capacitor upon activation treatment and is characterized in that, when the raw material carbon composition is carbonized in an inert gas atmosphere at a temperature of 1000 to 1500° C., the true relative density (RD) and the total hydrogen content (TH %) in the carbonized material obtained after the burning satisfy the following formula (1): RD=?0.75TH %+intercept??(1) wherein the intercept is 2.160 or greater.Type: GrantFiled: December 21, 2005Date of Patent: September 1, 2009Assignee: Nippon Oil CorporationInventors: Tamotsu Tano, Shiro Nakamo, Takashi Oyama, Hideki Ono, Keizou Ikai, Kiwamu Takeshita