Abstract: A conductor layer is positioned between a gate electrode and a drain electrode. The conductor layer contacts a nitride semiconductor layer. The conductor layer is electrically connected with the drain electrode. The drain electrode includes a first part contacting the nitride semiconductor layer, and a second part positioned further toward the conductor layer side than the first part in a first direction. An insulating film includes a portion positioned between the conductor layer and the drain electrode. The second part is located on the portion of the insulating film.

Abstract: A semiconductor device includes first and second semiconductor layers, first to third electrodes, an insulating region and a conductive layer. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The second electrode is located on the second semiconductor layer and arranged with the first electrode in a second direction. The third electrode is positioned between the first electrode and the second electrode. The insulating region is located on the second semiconductor layer. The insulating region is between the first electrode and the second electrode and next to the first electrode. The insulating region includes first and second insulating portions. The second insulating portion is positioned above the first insulating portion. The conductive layer is located between the first insulating portion and the second insulating portion. The conductive layer is electrically connected with the first electrode.

Abstract: A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The first electrode includes an electrode part and an electrode extension part. The electrode part contacts the second semiconductor layer. The electrode extension part extends from an upper end portion of the electrode part. The conductive part is positioned between the first electrode and the second electrode. The conductive part contacts an upper surface of the second semiconductor layer and contacting the first electrode. The insulating part is located on the conductive part and is positioned between the conductive part and the electrode extension part.

Abstract: A vehicle system includes: a plurality of drive sources that generate torque for braking and driving a drive wheel of a vehicle; and a control unit that controls the torque. At least one of the drive sources is an electric motor, and the control unit predicts a rotation speed of the electric motor after a current rotation speed, and determines, based on the predicted rotation speed, a start time of shift control for changing the torque to a predetermined torque limit value.

Abstract: A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

Abstract: There is provided a control device for vehicles which can improve quietness and fuel economy, while maintaining high responsiveness to acceleration of a vehicle. Therefore, the control device 100 for vehicles includes a gear ratio control unit 10 that controls a gear ratio of a vehicle V, and a determination unit 20 that determines whether or not there is an acceleration limit of the vehicle V. The gear ratio control unit 10 is configured to limit an increase in gear ratio Rt, when the determination unit 20 determines that there is an acceleration limit.

Abstract: A motor control device includes: an inverter that supplies an alternating current to a motor mounted on a vehicle; a current detection unit that detects the alternating current; a position detection unit that detects a rotor phase angle of the motor; and an inverter control unit that controls the inverter based on a current value detected by the current detection unit and the rotor phase angle detected by the position detection unit, wherein the inverter control unit, in response to a timing at which vibration of the vehicle is generated, changes a current phase angle of the motor, and makes a cycle of a waveform of a resultant current of the alternating current irregular.

Abstract: A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

Abstract: Provided is a motor controller that can estimate the magnetic flux of a magnet without changing a current of an electric motor. A motor controller 1 includes a current detecting unit 15 that detects a current of an electric motor 5, a current stability determining unit 10 that determines whether or not a current detected by the current detecting unit 15 is stable, and a magnetic flux calculating unit (filters 8a to 8e, a current conversion unit 4b, a resistance calculating unit 9, a magnet magnetic flux estimating unit 11) that based on a determination made by the current stability determining unit 10 as to current stability, calculates the magnetic flux of a magnet of the electric motor 5, according to a voltage equation in a rotating coordinate system, to output the calculated magnet flux.

Abstract: There is provided a control device for vehicles which can improve quietness and fuel economy, while maintaining high responsiveness to acceleration of a vehicle. Therefore, the control device 100 for vehicles includes a gear ratio control unit 10 that controls a gear ratio of a vehicle V, and a determination unit 20 that determines whether or not there is an acceleration limit of the vehicle V. The gear ratio control unit 10 is configured to limit an increase in gear ratio Rt, when the determination unit 20 determines that there is an acceleration limit.

Abstract: The present invention is to make it possible to effectively recover regenerative energy and improve a fuel efficiency. Thus, there is provided an HCM 50 of a hybrid vehicle, in which the hybrid vehicle includes: an engine; a drive wheel to which a driving force of the engine is transmittable; a motor to which the driving force from the engine is transmittable and which is capable of transmitting a driving force to the drive wheel; and a battery which supplies power for driving the motor and stores power generated by the motor.

Abstract: Provided is a transmission control device which can improve drivability in an acceleration section even while taking a reduction of fuel consumption in a deceleration section into consideration. The transmission control device (transmission controller) which controls a transmission in a running control of a vehicle includes a shift timing calculation unit which determines an acceleration position at which the vehicle accelerates on the basis of a target speed pattern generated from external information, a target gear ratio calculation unit which determines a required gear ratio which is required at the acceleration position, and a gear ratio overwriting command unit which outputs a command of overwriting the gear ratio such that the gear ratio at the acceleration position approaches the required gear ratio.

Abstract: Provided is a transmission control device which can improve drivability in an acceleration section even while taking a reduction of fuel consumption in a deceleration section into consideration. The transmission control device (transmission controller) which controls a transmission in a running control of a vehicle includes a shift timing calculation unit which determines an acceleration position at which the vehicle accelerates on the basis of a target speed pattern generated from external information, a target gear ratio calculation unit which determines a required gear ratio which is required at the acceleration position, and a gear ratio overwriting command unit which outputs a command of overwriting the gear ratio such that the gear ratio at the acceleration position approaches the required gear ratio.

Abstract: The present invention relates to a range switching device for performing range switching of an automatic transmission by using an actuator that is electrically controlled to be driven, and to a switching method thereof. A range switching device of an automatic transmission that can reduce collision noise occurring from a detent mechanism and a switching method thereof are provided. The automatic transmission includes a detent mechanism that presses a roller against a groove by using a spring, moves the roller between grooves, and determines a range position of the transmission, and a range of the transmission is changed by driving the detent mechanism by the actuator. In changing a range position of the transmission, the actuator is braked in accordance with a drawing force of the spring into a groove so that energy of the velocity when the roller reaches a target stop position can be controlled to approach zero.

Abstract: The present invention is to make it possible to effectively recover regenerative energy and improve a fuel efficiency. Thus, there is provided an HCM 50 of a hybrid vehicle, in which the hybrid vehicle includes: an engine; a drive wheel to which a driving force of the engine is transmittable; a motor to which the driving force from the engine is transmittable and which is capable of transmitting a driving force to the drive wheel; and a battery which supplies power for driving the motor and stores power generated by the motor.

Abstract: A method for forming an image and a protective layer on a transfer receiving material, by thermal transfer, including supplying a thermal transfer sheet between a thermal head of a thermal printer and a platen roller, wherein the thermal transfer sheet includes color material layers and a transferable protective layer arranged in a face serial manner, and wherein the thermal head includes heat generating portions arranged substantially in parallel with each other; thermally transferring the color material layers to form an image on the transfer receiving material; thermally transferring the transferable protective layer to form a protective layer on the transfer receiving material; and shifting the relative positions of the thermal head and the transfer receiving material with respect to each other, in a direction substantially in parallel with a main scanning direction, after transferring the color material layers at least once.

Abstract: A semiconductor device includes: a first electrode; a second electrode; a semiconductor region forming region between the first electrode and the second electrode; a first insulating film between the semiconductor region forming region and the second electrode; an actuation gate electrode in the semiconductor region forming region via a second insulating film; a dummy gate electrode, at a distance from the actuation gate electrode, on each of both sides of the actuation gate electrode in the semiconductor region forming region via a third insulating film; a trench contact, in a manner facing the actuation gate electrode, at a position in the third insulating film and between the dummy gate electrode and the semiconductor region forming region; and a contact electrode in the first insulating film and configured to electrically connect the trench contact to the second electrode.