Patents by Inventor Hideki Takeuchi

Hideki Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250125187
    Abstract: A method for making a semiconductor device may include forming spaced apart shallow trench isolation (STI) regions in a semiconductor layer, etching first portions of the semiconductor layer between adjacent ones of the STI regions to an etch depth, and performing a well implant in the first portions of the semiconductor layer. The method may further include forming respective superlattices on the first portions of the semiconductor layer between the adjacent ones of STI regions and with a height not greater than the etch depth. The method may also include forming respective spaced apart source and drain regions associated with each superlattice, and forming a respective gate above each superlattice.
    Type: Application
    Filed: October 15, 2024
    Publication date: April 17, 2025
    Inventors: DONGHUN KANG, KEITH DORAN WEEKS, DANIEL CONNELLY, HIDEKI TAKEUCHI, ROBERT J. MEARS
  • Publication number: 20250125149
    Abstract: A method for making a semiconductor device may include implanting non-semiconductor atoms into a localized region of a semiconductor layer, and forming a superlattice on the semiconductor layer over the localized region. The superlattice may include a stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one monolayer of the non-semiconductor atoms constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include performing a thermal treatment to cause non-semiconductor atoms from the superlattice to be displaced, and to cause non-semiconductor atoms from the localized region to migrate into the superlattice and replace at least some of the displaced non-semiconductor atoms.
    Type: Application
    Filed: October 15, 2024
    Publication date: April 17, 2025
    Inventors: MAREK HYTHA, RICHARD BURTON, NYLES WYNN CODY, ROBERT J. MEARS, HIDEKI TAKEUCHI, KEITH DORAN WEEKS
  • Publication number: 20250107139
    Abstract: A semiconductor device may include a substrate and spaced apart first and second doped regions in the substrate. The first doped region may be larger than the second doped region to define an asymmetric channel therebetween. The semiconductor device may further include a superlattice extending between the first and second doped regions to constrain dopant therein. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A gate may overly the asymmetric channel.
    Type: Application
    Filed: December 10, 2024
    Publication date: March 27, 2025
    Inventors: HIDEKI TAKEUCHI, RICHARD BURTON, YUNG-HSUAN YANG
  • Publication number: 20250081565
    Abstract: A memory device may include an array of memory cells on a semiconductor substrate. Each memory cell may include a first well in the semiconductor substrate having a first conductivity type, a second well adjacent the first well and having a second conductivity type and defining a depletion layer with the first well, and nanocrystals within the depletion region, with each nanocrystal comprising a semiconductor material and carbon. The memory device may further include spaced apart source and drain regions adjacent the second well and defining a channel therebetween, and a gate overlying the channel.
    Type: Application
    Filed: August 30, 2024
    Publication date: March 6, 2025
    Inventors: HIDEKI TAKEUCHI, NYLES WYNN CODY, ABHISHEK RAOL
  • Publication number: 20250081475
    Abstract: A memory device may include an array of memory cells on a semiconductor substrate. Each memory cell may include a first well on the semiconductor substrate having a first conductivity type, a second well adjacent the first well and having a second conductivity type and defining a depletion layer with the first well, and a superlattice within the depletion layer. The superlattice may include stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and a non-semiconductor monolayer(s) constrained within a crystal lattice of adjacent base semiconductor portions. Trap source atoms may also be within the stacked groups of layers. Each memory cell may further include spaced apart source and drain regions adjacent the second well and defining a channel therebetween, and a gate overlying the channel.
    Type: Application
    Filed: August 30, 2024
    Publication date: March 6, 2025
    Inventors: HIDEKI TAKEUCHI, NYLES WYNN CODY, ABHISHEK RAOL
  • Publication number: 20250079164
    Abstract: A method for making a memory device may include forming an array of memory cells on a semiconductor substrate. Each memory cell may include a first well on the semiconductor substrate having a first conductivity type, a second well adjacent the first well and having a second conductivity type and defining a depletion layer with the first well, and a superlattice within the depletion layer. The superlattice may include stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and a non-semiconductor monolayer(s) constrained within a crystal lattice of adjacent base semiconductor portions, and trap source atoms within the stacked groups of layers. Each memory call may also include spaced apart source and drain regions adjacent the second well and defining a channel therebetween, and a gate overlying the channel.
    Type: Application
    Filed: August 30, 2024
    Publication date: March 6, 2025
    Inventors: HIDEKI TAKEUCHI, NYLES WYNN CODY, ABHISHEK RAOL
  • Publication number: 20250081566
    Abstract: A method for making a memory device may include forming an array of memory cells on a semiconductor substrate. Each memory cell may include a first well in the semiconductor substrate having a first conductivity type, a second well adjacent the first well and having a second conductivity type and defining a depletion layer with the first well, and nanocrystals within the depletion region, with each nanocrystal comprising a semiconductor material and carbon. The memory device may further include spaced apart source and drain regions adjacent the second well and defining a channel therebetween, and a gate overlying the channel.
    Type: Application
    Filed: August 30, 2024
    Publication date: March 6, 2025
    Inventors: HIDEKI TAKEUCHI, NYLES WYNN CODY, ABHISHEK RAOL
  • Publication number: 20250048701
    Abstract: A method for making a semiconductor gate-all-around (GAA) device may include forming source and drain regions on a semiconductor substrate, forming a plurality of semiconductor nanostructures extending between the source and drain regions, and forming a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, the method may include forming at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
    Type: Application
    Filed: October 23, 2024
    Publication date: February 6, 2025
    Inventors: KEITH DORAN WEEKS, Nyles Wynn CODY, Marek HYTHA, Robert J. MEARS, Robert John STEPHENSON, Hideki TAKEUCHI
  • Patent number: 12199180
    Abstract: A semiconductor device may include a substrate and spaced apart first and second doped regions in the substrate. The first doped region may be larger than the second doped region to define an asymmetric channel therebetween. The semiconductor device may further include a superlattice extending between the first and second doped regions to constrain dopant therein. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A gate may overly the asymmetric channel.
    Type: Grant
    Filed: November 21, 2023
    Date of Patent: January 14, 2025
    Assignee: ATOMERA INCORPORATED
    Inventors: Hideki Takeuchi, Richard Burton, Yung-Hsuan Yang
  • Publication number: 20250014896
    Abstract: A method for making a semiconductor device may include forming a superlattice gettering layer on a substrate. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include forming a memory device above the superlattice gettering layer including a metal induced crystallization (MIC) channel adjacent the semiconductor substrate, and a gate associated with the MIC channel. The superlattice gettering layer may further include gettered metal particles from the MIC channel.
    Type: Application
    Filed: July 2, 2024
    Publication date: January 9, 2025
    Inventor: Hideki Takeuchi
  • Publication number: 20250015137
    Abstract: A semiconductor device may include a semiconductor substrate and a memory device on the semiconductor substrate including a metal induced crystallization (MIC) channel adjacent the semiconductor substrate, and a gate associated with the MIC channel. The semiconductor device may further include a superlattice gettering layer between the substrate and the MIC channel. The superlattice gettering layer may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The superlattice gettering layer may further include gettered metal particles from the MIC channel.
    Type: Application
    Filed: July 2, 2024
    Publication date: January 9, 2025
    Inventor: Hideki Takeuchi
  • Publication number: 20250006794
    Abstract: A method for making a semiconductor device may include forming a superlattice adjacent a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.
    Type: Application
    Filed: September 13, 2024
    Publication date: January 2, 2025
    Inventors: KEITH DORAN WEEKS, NYLES WYNN CODY, MAREK HYTHA, ROBERT J. MEARS, ROBERT JOHN STEPHENSON, HIDEKI TAKEUCHI
  • Patent number: 12142641
    Abstract: A method for making a semiconductor gate-all-around (GAA) device may include forming source and drain regions on a semiconductor substrate, forming a plurality of semiconductor nanostructures extending between the source and drain regions, and forming a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, the method may include forming at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: November 12, 2024
    Assignee: ATOMERA INCORPORATED
    Inventors: Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi
  • Publication number: 20240371943
    Abstract: A semiconductor device may include a semiconductor substrate, buried spaced-apart insulator regions in the substrate, and a monocrystalline semiconductor layer on the semiconductor substrate defining respective localized semiconductor on insulator (SOI) regions above the buried insulator regions, and respective localized bulk semiconductor regions laterally between adjacent SOI regions. The semiconductor device may also include a superlattice in the monocrystalline semiconductor layer. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
    Type: Application
    Filed: May 3, 2024
    Publication date: November 7, 2024
    Inventors: DONGHUN KANG, HIDEKI TAKEUCHI, KEITH DORAN WEEKS, YI-ANN CHEN
  • Publication number: 20240371883
    Abstract: A method for making a semiconductor device may include forming buried spaced-apart insulator regions in a semiconductor substrate, and forming a monocrystalline semiconductor layer on the semiconductor substrate defining respective localized semiconductor on insulator (SOI) regions above the buried insulator regions, and respective localized bulk semiconductor regions laterally between adjacent SOI regions. The method may also include forming a superlattice in the monocrystalline semiconductor layer. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
    Type: Application
    Filed: May 3, 2024
    Publication date: November 7, 2024
    Inventors: DONGHUN KANG, HIDEKI TAKEUCHI, KEITH DORAN WEEKS, YI-ANN CHEN
  • Patent number: 12119380
    Abstract: A method for making a semiconductor device may include forming a superlattice adjacent a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.
    Type: Grant
    Filed: November 3, 2023
    Date of Patent: October 15, 2024
    Assignee: ATOMERA INCORPORATED
    Inventors: Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi
  • Publication number: 20240339319
    Abstract: A method for making a semiconductor device may include forming a first single crystal silicon layer having a first percentage of silicon 28, and forming a superlattice above the first single crystal silicon layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions. The method may further include forming a second single crystal silicon layer above the superlattice having a second percentage of silicon 28 higher than the first percentage of silicon 28.
    Type: Application
    Filed: June 20, 2024
    Publication date: October 10, 2024
    Inventors: MAREK HYTHA, KEITH DORAN WEEKS, NYLES WYNN CODY, HIDEKI TAKEUCHI
  • Publication number: 20240321575
    Abstract: A radio frequency (RF) semiconductor device may include a semiconductor-on-insulator substrate, and an RF ground plane layer on the semiconductor-on-insulator substrate including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers comprising stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The RF semiconductor device may further include a body above the RF ground plane layer, spaced apart source and drain regions adjacent the body and defining a channel region in the body, and a gate overlying the channel region.
    Type: Application
    Filed: May 20, 2024
    Publication date: September 26, 2024
    Inventors: HIDEKI TAKEUCHI, ROBERT J. MEARS
  • Publication number: 20240304443
    Abstract: A method for making a radio frequency (RF) semiconductor device may include forming an RF ground plane layer on a semiconductor-on-insulator substrate and including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers including stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The method may further include forming a body above the RF ground plane layer, forming spaced apart source and drain regions adjacent the body and defining a channel region in the body, and forming a gate overlying the channel region.
    Type: Application
    Filed: May 20, 2024
    Publication date: September 12, 2024
    Inventors: Hideki TAKEUCHI, Robert J. MEARS
  • Publication number: 20240304493
    Abstract: A semiconductor processing method may include forming a superlattice layer on a donor semiconductor wafer, the superlattice including a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include performing ion implantation on the donor semiconductor wafer to create a separation layer below the superlattice layer, forming an oxide layer on a base semiconductor wafer, performing ion beam treatment on the oxide layer, bonding the donor semiconductor wafer to the base semiconductor wafer so that the superlattice layer is adjacent the oxide layer, removing portions of the donor wafer at the separation layer from the donor wafer to define an active semiconductor layer above the superlattice layer, and forming an electronic device(s) in the active layer.
    Type: Application
    Filed: March 7, 2024
    Publication date: September 12, 2024
    Inventors: HIDEKI TAKEUCHI, SUSUMU KUWABARA