Patents by Inventor Hideki Uochi

Hideki Uochi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210011317
    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
    Type: Application
    Filed: September 24, 2020
    Publication date: January 14, 2021
    Inventors: Hajime KIMURA, Hideki UOCHI
  • Publication number: 20200395486
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 17, 2020
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • Publication number: 20200350308
    Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Inventors: Shunpei YAMAZAKI, Kengo AKIMOTO, Shigeki KOMORI, Hideki UOCHI, Tomoya FUTAMURA, Takahiro KASAHARA
  • Publication number: 20200286554
    Abstract: Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.
    Type: Application
    Filed: May 20, 2020
    Publication date: September 10, 2020
    Inventors: Hideki UOCHI, Koichiro KAMATA
  • Patent number: 10770596
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: September 8, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Publication number: 20200279595
    Abstract: A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.
    Type: Application
    Filed: October 2, 2018
    Publication date: September 3, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshiaki OIKAWA, Atsushi MIYAGUCHI, Hideki UOCHI
  • Patent number: 10756080
    Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: August 25, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Shigeki Komori, Hideki Uochi, Tomoya Futamura, Takahiro Kasahara
  • Patent number: 10726913
    Abstract: Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: July 28, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideki Uochi, Koichiro Kamata
  • Publication number: 20200150474
    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
    Type: Application
    Filed: January 7, 2020
    Publication date: May 14, 2020
    Inventors: Hajime KIMURA, Hideki UOCHI
  • Publication number: 20200111816
    Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
    Type: Application
    Filed: December 5, 2019
    Publication date: April 9, 2020
    Inventors: Shunpei YAMAZAKI, Kengo AKIMOTO, Shigeki KOMORI, Hideki UOCHI, Rihito WADA, Yoko CHIBA
  • Publication number: 20200111913
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: October 11, 2019
    Publication date: April 9, 2020
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • Publication number: 20200091202
    Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 19, 2020
    Inventors: Shunpei YAMAZAKI, Kengo Akimoto, Shigeki Komori, Hideki Uochi, Tomoya Futamura, Takahiro Kasahara
  • Patent number: 10559599
    Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: February 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Shigeki Komori, Hideki Uochi, Rihito Wada, Yoko Chiba
  • Patent number: 10559598
    Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: February 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Shigeki Komori, Hideki Uochi, Tomoya Futamura, Takahiro Kasahara
  • Patent number: 10539847
    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: January 21, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Hideki Uochi
  • Patent number: 10488887
    Abstract: An electronic device with favorable reliability is provided. The electronic device can be folded in half and includes a bendable display device. In the electronic device, a first space is provided in the neighborhood of a hinge that connects two housings. Part of the display device is stored in a second space when the electronic device is folded, which prevents excessing bending of the display device and increases reliability. The display device may be provided on a side surface of the housings, which increases visibility. The side surface of the housings preferably includes a curved surface. The display device may include a first pixel reflecting visible light and a second pixel emitting visible light, which increases the visibility and decreases power consumption of the electronic device.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: November 26, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideki Uochi
  • Patent number: 10452218
    Abstract: A display device with less power consumption. The display device operates in a still image display period and a moving image display period, and includes a receiving circuit having a function of receiving an image signal, a driver circuit having a function of driving a display portion, and the display portion having a function of displaying an image. The display portion displays an image at a frame frequency of less than or equal to 1 Hz in the still image display period. The receiving circuit stops receiving an image signal in the still image display period. Switching from the still image display period to the moving image display period is accurately performed by an external signal.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: October 22, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Roh Yamamoto, Hideki Uochi
  • Patent number: 10446693
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: October 15, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Publication number: 20190302501
    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
    Type: Application
    Filed: June 10, 2019
    Publication date: October 3, 2019
    Inventors: Hajime KIMURA, Hideki UOCHI
  • Patent number: 10367006
    Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: July 30, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Shigeki Komori, Hideki Uochi, Tomoya Futamura, Takahiro Kasahara