Abstract: When receiving a request for a write, write data is added by identifier information for confirming the normality of the data and then written to a storage apparatus, with the identifier information being added to format information, of a writing track, which is recorded in a track format table. And when receiving a request for a read, the requester is notified of a data abnormality if identifier information of data read from a storage apparatus does not identify with that of format information, of the reading track, which is recorded in the track format table.

Abstract: In the present invention, for each set of blocks [#(0) to #(N?1)] storing update data, a history block [#(N)] storing an update state value, for example, a generation, time or check code, showing an update state is provided, constituting a set of management data as a check object. When writing update data on a disk, a new update state value is calculated for the same set of management data and stored in memory as update state confirmation value. The new update state value is also set as write data in the history block in the same set of management data, and the entire of the set of management data including update data and update state value are written onto a disk. The history block is read and disk write omissions are detected by comparing the update state value and the update state confirmation value stored in memory.

Abstract: In the present invention, for each set of blocks [#(0) to #(N-1)] storing update data, a history block [#(N)] storing an update state value, for example, a generation, time or check code, showing an update state is provided, constituting a set of management data as a check object. When writing update data on a disk, a new update state value is calculated for the same set of management data and stored in memory as update state confirmation value. The new update state value is also set as write data in the history block in the same set of management data, and the entire of the set of management data including update data and update state value are written onto a disk. The history block is read and disk write omissions are detected by comparing the update state value and the update state confirmation value stored in memory.

Abstract: The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a <110> orientation on the main surface.

Abstract: In a work skill estimating device, an item information receiving unit receives, as item information, duration information of each dealing sequence in a customer call. A dealing duration estimating unit estimates a dealing duration of an item based on the item information received. A work skill estimating unit estimates an operator's work skill based on the dealing duration estimated. A skill map creating unit creates a skill map to comprehend the operator's work skill estimated.

Abstract: Information such as status of each operator that is information about whether the operator is engaged in processing a transaction or he is standby, how long it will take the operator to complete the transaction he is processing at this time, and when the operator started processing the transaction is stored. If a plurality of the operators are standby when a transaction is received, one operator is selected from among the standby operators as an operator to process the transaction. If no operator is standby, it is estimated when each operator is going to be standby and one operator is selected, from among the operators who are going to be standby in not more than a predetermined time, as the operator to process the transaction.

Abstract: There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (°C./mm) at the center of a crystal and the temperature gradient Ge (°C./mm) at the circumferential portion of the crystal, namely &Dgr;G=(Ge−Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C.

Abstract: A watch dog timer capable of detecting a runaway state of a system including a CPU and DMAC has a watch dog timer and a count clock controller. The watch dog timer counts the number of clock and stores a count result, and transmits a watch dog time out signal to other devices in the system if the number of clocks is over a predetermined value. The count clock controller receives the clock and transmits the clock to the watch dog timer, and halts the transmission of the clock to the watch dog timer when the CPU transmits a bus permission signal to the DMAC.

Abstract: In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface ±5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (=Ge−Gc) is not greater than 5° C./cm, where Ge is a temperature gradient (° C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (° C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420° C. and 1350° C. or between a melting point of silicon and 1400° C.

Abstract: An application protocol of a connection between a server and a client is converted into a multiplexing protocol having a huge communication window. The resultant connection is repeated. Since an agent relaying device receives data from the server using a large buffer, a throughput assigned by the server to the connection is increased.

Abstract: There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (° C./mm) at the center of a crystal and the temperature gradient Ge (° C./mm) at the circumferential portion of the crystal, namely &Dgr;G=(Ge−Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C.

Abstract: There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (° C./mm) at the center of a crystal and the temperature gradient Ge (° C./mm) at the circumferential portion of the crystal, namely &Dgr;G=(Ge−Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C.

Abstract: A method for producing a silicon monocrystal according to Czochralski method characterized in growing crystal with controlling a pulling rate between a transition pulling rate Pc at which there is caused a transition from a region where excess vacancies are present, but grown-in defect is not present to a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present, and a transition pulling rate Pi from a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present to a region where an agglomerate of interstitial silicon atoms is present. There are provided a method for producing a silicon monocrystal having no defect through the whole area of the wafer and having high quality wherein a deviation of amount of precipitated oxygen is small by pulling a crystal with controlling a pulling rate P as a general and interoperable valuable, and the silicon monocrystal produced thereby.

Abstract: In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C.

Abstract: A first image is formed with at least a first color included in a first coloring system and corresponding to first color signal data converted from second signal data corresponding to at least a second color included in a second coloring system and related to an original image. At least a color modification parameter corresponding to a difference between the first color and a third color related to the original image. The color modification parameter is optimized to calculate a first area to be modified and a first amount to be modified with respect to the original image. A second image is formed using the second color signal data on the basis of the first area and amount to be modified and another first image already formed. Next, a third image is formed using the first color signal data, the third image corresponding to the second color. And, the second and third images are synthesized to form the first image.

Abstract: In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C.

Abstract: In a stator for an electric motor, insulating members are formed on laminated iron cores divided for each pole-tooth unit in the direction of the output shaft and windings are applied perpendicularly to the pole-tooth portions in a high-density alignment. After a predetermined number of the laminated iron cores are combined so as to form a cylindrical configuration, they are welded at the outer end portions of the dividing surfaces in the direction of lamination so as to construct an integral structure stator with rigidity, thereby enabling high densification of the windings (conductor space factor of 70%) and space-savings in the winding end portions. Further, as any joint portions between the pole-tooth portions are not necessary, reduction (5 to 10%) in motor efficiency due to such joint portions can be prevented, and, as any integrally forming by resinous members is not necessary, inter-winding short-circuiting is not caused. Welding may be replaced by adhesive bonding.

Abstract: An improved drive apparatus for a LC display screen is provided. The inventioned drive apparatus includes a programmable time setting means for changing drive currents in accordance with the size of the LC display screen. Depending upon the size of the LC display screen, it is necessary to change the drive current for charging up the display as promptly as possible at an initial stage of operation. The inventioned drive apparatus includes at least one time setting register means for programmably pre-setting a time according to the size of the display screen and a circuit selection means for providing a low resistor selection signal and a high resistor selection signal in accordance with the pre-set time of the time setting means.

Abstract: A dielectric resonator of a folded strip line type structure in which an electrode is formed on the outer circumferential portion of a cutout-carrying U-shaped dielectric substrate exclusive of the upper and lower surfaces thereof and either one of two end surfaces at the opened portion of the cutout. An island electrode formed in the vicinity of a non-electrode-carrying end surface out of the two end surfaces at the opened portion of the cutout is used as an input-output coupling electrode. The inner wall surface of the cutout can be formed wavily, and a separate dielectric member can be fitted into the cutout.