Abstract: Provided is a hollow inorganic particle having excellent strength despite having high porosity. Provided is a hollow inorganic particle including an outer shell, the thinnest part of the outer shell/the thickest part of the outer shell being 0.80 or more. The hollow inorganic particle according to the present technology can be produced by a production method including: a coating step of coating core particles made of an organic polymer with a silicone-based compound; and a core particle removal step of removing the core particles. The coating step includes: a dispersant addition step of adding a dispersant to a core particle dispersion; and, after the dispersant addition step, a surfactant addition step of adding a cationic surfactant.

Abstract: Disclosed is a black powder comprising silica particles that contain carbon. Each of the silica particles is single-layered. The content of carbon contained in the surfaces of the silica particles measured by an X-ray photoelectron spectroscopy is 1% by mass or less.

Abstract: Disclosed is a black powder comprising silica particles that contain carbon. Each of the silica particles is single-layered. The content of carbon contained in the surfaces of the silica particles measured by an X-ray photoelectron spectroscopy is 1% by mass or less.

Abstract: There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

Abstract: Disclosed is a black powder comprising silica particles that contain carbon. Each of the silica particles is single-layered. The content of carbon contained in the surfaces of the silica particles measured by an X-ray photoelectron spectroscopy is 1% by mass or less.

Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.

Abstract: Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound.

Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

Abstract: A method for forming a conductive film on a substrate includes forming a precursor-containing film on the substrate; and irradiating plasma of a treatment gas to the precursor-containing film by an atmospheric pressure plasma treatment device, removing the organic substances and forming a conductive film from the metallic fine particles or the metallic compounds, the atmospheric pressure plasma treatment device including: a microwave generator, a hollow waveguide, a gas supply device, and an antenna portion configured to discharge to the outside, whereby the treatment gas being converted to plasma by the microwaves, the plasma thus generated being irradiated to the precursor-containing film on the substrate, and a hydrogen radical density of the plasma at a position spaced apart 7 mm from the slot holes being equal to or higher than 2×1014/cm3.

Abstract: A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

Abstract: The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

Abstract: A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.

Abstract: A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess is provided. The processing system comprises: a processing apparatus configured to form a first-metal-containing film containing a first metal on a surface of the target object; a processing apparatus configured to form a second-metal-containing film containing Mn as a second metal having a barrier property against a filling metal to be filled in the recess; a processing apparatus configured to form a thin film made of a third metal as the filling metal to be filled; a common transfer chamber connected with each of the processing apparatuses; a transfer unit for transferring the target object into each of the processing apparatuses; and a system controller that controls the whole processing system so as to perform a film forming method.

Abstract: A method for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air includes: hydrophobizing a surface of the processing chamber by introducing a hydrophobic gas into the processing chamber without the object to be processed accommodated in the processing chamber; and forming the thin film by introducing the organic metal raw material gas into the processing chamber with the object to be processed accommodated in the processing chamber.