Abstract: A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Abstract: [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness. [Means for Solving the Problems] A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.

Abstract: Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

Abstract: In a CVD apparatus (111), a reforming process is performed on a porous low dielectric constant film containing silicon, by heating a semiconductor wafer W by a heater, introducing 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), and performing heat treatment without applying a high frequency voltage. Then, in the same CVD apparatus (111), an insulation film having high density and hardness is formed on the porous low dielectric constant film, by heating the semiconductor wafer W, introducing TMCTS, and generating a plasma of a gas containing TMCTS while applying a high frequency voltage.

Abstract: A substrate mounting table includes a mounting table main body whose top surface and side surface are covered with an upper cover member. Surface treatment is performed partially to a substrate surrounding region disposed outside a substrate mounting region on a top surface of the upper cover member, so that the substrate surrounding region is smoother than the substrate mounting region. The substrate mounting region is covered by a wafer when the wafer is mounted thereon. Thus, for instance, a metal component generated upon removal of a metal oxide film from the substrate is not easily adhered on the mounting table, and is easily removed if adhered.

Abstract: A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.

Abstract: A semiconductor device having high reliability is provided by reducing fluorine remaining in a metal forming the semiconductor device. Specifically disclosed is a method for manufacturing a semiconductor device including a fluoride removal step for removing a metal fluoride produced on a metal forming an electrode or wiring of a semiconductor device which is formed on a substrate to be processed. This method for manufacturing a semiconductor device is characterized in that the metal fluoride is removed by supplying formic acid in a gaseous state to the substrate to be processed in the fluoride removal step.

Abstract: Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace 41, a step of supplying gaseous acetic anhydride into the heat treatment furnace 41, while controlling the flow rate using a mass flow controller 44d, and a step of heating the wafer W in the heat treatment furnace 41 supplied with gaseous acetic anhydride by using a heater 41b provided in the heat treatment furnace 41.

Abstract: A wafer W is arranged on a susceptor 22 in a chamber 21, and a metal film is formed on a surface of the wafer W by continuously supplying the chamber 21 with a metal compound gas from a metal compound gas supply unit 51 and a reducing organic compound gas from a reducing organic compound gas supply unit 52 of a gas supply mechanism 50.

Abstract: A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a —C6H5 group) and polymerizable group (a hydrogen atom, a hydroxyl group or a halogen atom) is allowed to undergo a gas-phase polymerization reaction, under reduced pressure (of not more than 30 kPa), in the presence of a raw porous silica film and to thus form a modified porous silica film wherein a hydrophobic polymer thin film is formed on the inner walls of holes present in the raw porous silica film. The resulting porous silica film has a low relative dielectric constant and a low refractive index and the silica film is likewise improved in the mechanical strength and hydrophobicity. A semiconductor device is produced using the porous silica film.

Abstract: A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target substrate while setting the target substrate to be kept at a first temperature, and a second step of sublimating the metal complex by heating the target substrate to maintain it at a second temperature higher than the first temperature.

Abstract: A semiconductor device manufacturing apparatus is disclosed. The semiconductor device manufacturing apparatus applies a process to a semiconductor wafer by supplying a vapor of a corrosive liquid source to a processing container. An electrode is immersed in a storing container which stores the corrosive liquid source. The main material of the electrode is a metal whose ionization tendency is less than that of a metal of the storing container, and a protection current is applied between them by a DC power source. Or another electrode is used. The main material of the electrode is a metal whose ionization tendency is greater than that of the metal of the storing container and the metal of the electrode does not damage the semiconductor wafer. A protection current is applied between the storing container and the electrode by utilizing the difference of the ionization tendency between them.

Abstract: Disclosed is a heat treatment unit 4 serving as a heat treatment apparatus, which includes a chamber 42 for containing a wafer W on which a low dielectric constant interlayer insulating film is formed, a formic acid supply device 44 for supplying gaseous formic acid into the chamber 42, and a heater 43 for heating the wafer W in the chamber 42 which is supplied with formic acid by the formic acid supply device 44.

Abstract: Substrate processing apparatus 100 includes supporting table 103 for not only supporting a target substrate W but also heating the target substrate W; processing chamber 101 having the supporting table 103 disposed therein; and gas supply unit 102 for supplying a processing gas into the processing chamber 101. The processing gas includes at least one of organic acid ammonium salt, organic acid amine salt, organic acid amide and organic acid hydrazide.

Abstract: Substrate processing apparatus 100 includes supporting table 103 for not only supporting a target substrate W but also heating the target substrate W; processing chamber 101 having the supporting table disposed therein; and gas supply unit 102 for supplying a processing gas into the processing chamber 101. The processing gas includes organic acid metal complex or organic acid metal salt.

Abstract: A copper re-deposition preventing method includes placing inside a chamber a target substrate with a film including a copper-containing substance and formed thereon, and performing removal of the copper-containing substance from the target substrate placed inside the chamber, by dry cleaning using an organic compound. Then, the method includes unloading from the chamber the target substrate processed by the removal of the copper-containing substance, and depositing a coating film inside the chamber, in which the target substrate processed by the removal of the copper-containing substance is no longer present, thereby covering copper-containing scattered particles left inside the chamber.

Abstract: A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Abstract: The semiconductor device manufacturing method includes forming an alloy film of copper and an additive metal along a wall surface of a recess portion of an interlayer insulating film in a surface of a substrate; forming a barrier layer made of a compound of the additive metal and a constituent element of the interlayer insulating film; heating the substrate under an atmosphere containing an organic acid, an organic acid anhydride, or ketones to precipitate surplus additive metal onto a surface of the alloy film; and burying copper in the recess portion after heating the substrate. Since the organic acid, the organic acid anhydride, and the ketones have a reducing power for Cu, an oxidation of Cu in the alloy film is suppressed while a barrier layer made of a compound of the additive metal and a constituent element of the insulating film is formed.

Abstract: A film formation method is arranged to react carboxylic acid with an oxygen-containing metal compound to produce carboxylate salt gas of a metal of the metal compound. The method then supplies the carboxylate salt gas of the metal onto a substrate. The method applies energy to the substrate to decompose the carboxylate salt of the metal supplied onto the substrate, thereby forming a metal film.

Abstract: In a CVD apparatus (111), a reforming process is performed on a porous low dielectric constant film containing silicon, by heating a semiconductor wafer W by a heater, introducing 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), and performing heat treatment without applying a high frequency voltage. Then, in the same CVD apparatus (111), an insulation film having high density and hardness is formed on the porous low dielectric constant film, by heating the semiconductor wafer W, introducing TMCTS, and generating a plasma of a gas containing TMCTS while applying a high frequency voltage.