Patents by Inventor Hideo Kido
Hideo Kido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140151533Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.Type: ApplicationFiled: November 18, 2013Publication date: June 5, 2014Applicant: Sony CorporationInventors: Taiichiro Watanabe, Akihiro Yamada, Hideo Kido, Hiromasa Saito, Keiji Mabuchi, Yuko Ohgishi
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Patent number: 8723999Abstract: A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.Type: GrantFiled: January 6, 2011Date of Patent: May 13, 2014Assignee: Sony CorporationInventors: Hideo Kido, Atsuhiko Yamamoto, Akihiro Yamada
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Publication number: 20140002704Abstract: There is provided a solid-state imaging device including a plurality of photoelectric conversion units, a signal line that is wired along the plurality of photoelectric conversion units, and an output transistor that is electrically connected to each of the photoelectric conversion units and includes a gate electrode and two impurity regions, the two impurity regions being disposed on both sides of the gate electrode and being different in sizes in terms of at least one of a dimension in a channel width direction and a depth, the signal line being connected to one of the two impurity regions that has a smaller size.Type: ApplicationFiled: June 17, 2013Publication date: January 2, 2014Inventor: Hideo Kido
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Patent number: 8614759Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.Type: GrantFiled: June 8, 2009Date of Patent: December 24, 2013Assignee: Sony CorporationInventors: Taiichiro Watanabe, Akihiro Yamada, Hideo Kido, Hiromasa Saito, Keiji Mabuchi, Yuko Ohgishi
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Publication number: 20130264389Abstract: A laser scanning system with sufficient power to drill very small holes or marks in materials. The holes or marks are so small that they cannot be seen with the human eye. These holes and marks can be arranged in an ID matrix barcode or other barcode that can be detected with a specially designed barcode reader.Type: ApplicationFiled: April 5, 2013Publication date: October 10, 2013Inventors: Wayne Shaffer, Hideo Kido
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Publication number: 20130015513Abstract: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than imType: ApplicationFiled: July 3, 2012Publication date: January 17, 2013Applicant: SONY CORPORATIONInventors: Hideo Kido, Takayuki Enomoto, Hideaki Togashi
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Patent number: 8288770Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.Type: GrantFiled: December 24, 2009Date of Patent: October 16, 2012Assignee: Sony CorporationInventors: Hideo Kido, Hiroaki Ishiwata
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Patent number: 8097486Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: GrantFiled: February 19, 2010Date of Patent: January 17, 2012Assignee: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Patent number: 8093635Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: GrantFiled: March 24, 2008Date of Patent: January 10, 2012Assignee: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20110180860Abstract: A solid-state imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and pixel transistors, which are formed on a semiconductor substrate; a floating diffusion unit in the pixel; a first-conductivity-type ion implantation area for surface pinning, which is formed over the surface on the side of the photoelectric conversion unit and the surface of the semiconductor substrate; and a second-conductivity-type ion implantation area for forming an overflow path serving as an overflow path for the floating diffusion unit, the second-conductivity-type ion implantation area being formed below the entire area of the first-conductivity-type ion implantation area. An overflow barrier is formed using the second-conductivity-type ion implantation area. A charge storage area is formed using an area in which the second-conductivity-type semiconductor area and the second-conductivity-type ion implantation area superpose each other.Type: ApplicationFiled: December 22, 2010Publication date: July 28, 2011Applicant: Sony CorporationInventors: Akihiro Yamada, Atsuhiko Yamamoto, Hideo Kido
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Publication number: 20110181747Abstract: A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.Type: ApplicationFiled: January 6, 2011Publication date: July 28, 2011Applicant: Sony CorporationInventors: Hideo Kido, Atsuhiko Yamamoto, Akihiro Yamada
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Publication number: 20100167450Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: ApplicationFiled: February 19, 2010Publication date: July 1, 2010Applicant: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20100091156Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.Type: ApplicationFiled: December 24, 2009Publication date: April 15, 2010Applicant: Sony CorporationInventors: Hideo KIDO, Hiroaki ISHIWATA
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Patent number: 7638804Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.Type: GrantFiled: March 16, 2007Date of Patent: December 29, 2009Assignee: Sony CorporationInventors: Hideo Kido, Hiroaki Ishiwata
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Publication number: 20090303371Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.Type: ApplicationFiled: June 8, 2009Publication date: December 10, 2009Applicant: SONY CORPORATIONInventors: Taiichiro Watanabe, Akihiro Yamada, Hideo Kido, Hiromasa Saito, Keiji Mabuchi, Yuko Ohgishi
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Publication number: 20080237666Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: ApplicationFiled: March 24, 2008Publication date: October 2, 2008Applicant: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20070215912Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.Type: ApplicationFiled: March 16, 2007Publication date: September 20, 2007Inventors: Hideo Kido, Hiroaki Ishiwata