Abstract: An upper circuit board body has a first upper main surface and a first lower main surface. A lower circuit board body has a second upper main surface and a second lower main surface. A lower circuit board first mounting electrode and one or more lower circuit board second mounting electrodes are disposed on the second upper main surface. A first component is mounted on the one or more lower circuit board second mounting electrodes. A first conductor member is mounted on the lower circuit board first mounting electrode and is disposed on the left of the first component. A second conductor member is disposed on the first lower main surface, is connected to the upper end of the first conductor member, and overlaps at least a part of the first component as viewed in the downward direction.

Abstract: An electronic component package includes: a resin portion having a first surface; one or more electronic components each having a plurality of external electrodes; and a plurality of extraction electrodes electrically connected to the plurality of external electrodes. Only each of the plurality of extraction electrodes is exposed from the resin portion on the first surface. The plurality of external electrodes are covered with the resin portion.

Abstract: The present disclosure is directed to an electronic component module including: a substrate; an electronic component mounted on the substrate; and a sub-module mounted on the substrate, the sub-module including a wiring board, a first electronic component disposed on one of two main surfaces of the wiring board, a second electronic component disposed on the other of the two main surfaces of the wiring board, and a first sealing member that covers the wiring board, the first electronic component, and the second electronic component.

Abstract: A substrate structure comprises a substrate having a first surface, a first electrode disposed on the first surface, a bump connected to the first electrode, and a protective member that covers the first surface and covers a portion of the bump. The protective member has an opening. The bump includes a portion exposed through the opening. The bump includes a first portion that is connected to the first electrode, and a second portion that is located farther from the first electrode than the first portion and is connected to the first portion. The bump has a constriction at a boundary between the first portion and the second portion. When viewed in a direction perpendicular to the first surface, a maximum diameter of the second portion is smaller than a maximum diameter of the first portion.

Abstract: A vacuum device includes a processing target placement unit that is arranged inside a vacuum chamber and a vacuum evacuation unit that is connected to the vacuum chamber. The processing target placement unit has one main surface on which processing targets are placed and a side surface that is connected to the one main surface. The processing target placement unit is provided with a plurality of grooves that have openings at the one main surface. When the processing target placement unit is viewed from the one main surface side thereof, the smallest width of the opening of each groove in the one main surface is equal to or less than half the smallest width of the processing target.

Abstract: The present disclosure improves the adhesive strength of a shield film in a high-frequency module that includes a shield film that shields components from unwanted electromagnetic waves from the outside. A high-frequency module is provided with: a sealing body that includes a multilayer wiring substrate, components that are mounted on an upper surface of the multilayer wiring substrate, and a sealing resin layer that is stacked on the upper surface of the multilayer wiring substrate and covers the components; and a shield film that covers a surface of the sealing resin layer. A side surface of the sealing body has curved surface portions formed so as to have a curved surface shape, and the curved surface portions are roughened with a plurality of grooves.

Abstract: A module includes a wiring board, a plurality of components mounted on an upper surface of the wiring board, a sealing resin layer which seals the components provided on the upper surface of the wiring board, and a shield layer provided so as to cover a surface of the sealing resin layer. The shield layer includes an adhesion layer which is stacked on the surface of the sealing resin layer and includes a first adhesion film composed of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl, a conductive layer which is stacked on the adhesion layer, and a protective layer which is stacked on the conductive layer and includes a protective film composed of a nitride, oxide, or oxynitride of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl.

Abstract: The present disclosure improves the adhesive strength of a shield film in a high-frequency module that includes a shield film that shields components from unwanted electromagnetic waves from the outside. A high-frequency module is provided with: a sealing body that includes a multilayer wiring substrate, components that are mounted on an upper surface of the multilayer wiring substrate, and a sealing resin layer that is stacked on the upper surface of the multilayer wiring substrate and covers the components; and a shield film that covers a surface of the sealing resin layer. A side surface of the sealing body has curved surface portions formed so as to have a curved surface shape, and the curved surface portions are roughened with a plurality of grooves.

Abstract: A module includes a wiring board, a plurality of components mounted on an upper surface of the wiring board, a sealing resin layer which seals the components provided on the upper surface of the wiring board, and a shield layer provided so as to cover a surface of the sealing resin layer. The shield layer includes an adhesion layer which is stacked on the surface of the sealing resin layer and includes a first adhesion film composed of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl, a conductive layer which is stacked on the adhesion layer, and a protective layer which is stacked on the conductive layer and includes a protective film composed of a nitride, oxide, or oxynitride of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl.

Abstract: A vacuum device includes a processing target placement unit that is arranged inside a vacuum chamber and a vacuum evacuation unit that is connected to the vacuum chamber. The processing target placement unit has one main surface on which processing targets are placed and a side surface that is connected to the one main surface. The processing target placement unit is provided with a plurality of grooves that have openings at the one main surface. When the processing target placement unit is viewed from the one main surface side thereof, the smallest width of the opening of each groove in the one main surface is equal to or less than half the smallest width of the processing target.

Abstract: A plating layer of a Cu-M-based alloy (M represents Ni and/or Mn) is formed on an end surface of a connection terminal member at an exposed side, the Cu-M-based alloy being capable of generating an intermetallic compound with an Sn-based low-melting-point metal contained in a bonding material forming a bonding portion and having a lattice constant different from that of the intermetallic compound by 50% or more. In the reflow process, even if the bonding material is about to flow out by re-melting thereof, since the bonding material is brought into contact with the Cu-M-based plating layer, a high-melting-point alloy of the intermetallic compound is formed so as to block the interface between the connection terminal member and the resin layer.

Abstract: A bonding method that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu—Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more.

Abstract: A plating layer of a Cu—M-based alloy (M represents Ni and/or Mn) is formed on an end surface of a connection terminal member at an exposed side, the Cu—M-based alloy being capable of generating an intermetallic compound with an Sn-based low-melting-point metal contained in a bonding material forming a bonding portion and having a lattice constant different from that of the intermetallic compound by 50% or more. In the reflow process, even if the bonding material is about to flow out by re-melting thereof, since the bonding material is brought into contact with the Cu—M-based plating layer, a high-melting-point alloy of the intermetallic compound is formed so as to block the interface between the connection terminal member and the resin layer.

Abstract: An elastic material, in which at least the surface thereof is adhesive and conductive, is provided on a plate, and while a substrate constituting a component of an electronic part is held on the surface of the elastic material by the adhesiveness of the elastic material, an element such as a semiconductor chip is mounted at a fixed location on the substrate.

Abstract: In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu—Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more.

Abstract: A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: A semiconductor element is provided with a heat dissipating path defined by a non-through hole in a first principal surface and that is filled with a conductive material. The semiconductor element is bonded to a heat sink with the conductive material disposed therebetween. Solder can be used as the conductive material, for example. By introducing molten solder into the non-through hole while having solder disposed between the semiconductor element and the heat sink, the heat dissipating path is provided and the heat sink is bonded to the semiconductor element.