Abstract: An occupant restraint system comprises a seat belt tension application device; a longitudinal acceleration detector; a lateral acceleration detector; and a control device that controls the tension applied by the seat belt tension application device based upon a longitudinal acceleration detection value and a lateral acceleration detection value and the control device engages the seat belt tension application device to apply the tension to the seat belt if a point on the map determined in conformance to the longitudinal acceleration detection value and the lateral acceleration detection value obtained as the vehicle decelerates is outside a range enclosed by the operation decision-making threshold line and the other axis.

Abstract: The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

Abstract: To reduce the connection resistance between copper wirings, and to improve the reliability of the wiring such as anti-electromigration characteristics.

Abstract: A rear end collision sensor is designed to detect the possibility of a rear end collision of a vehicle in advance. Upon detection, a controller drives a seat belt system to restrain the head of a seat occupant toward a headrest of the seat or to straighten the spine of the seat occupant to protect the neck against impending impact.

Abstract: A vehicle body structure is provided to ensure a sufficient space in a passenger's room of a vehicle and bear an impact load inputted to the vehicle's part higher than a floor tunnel. The vehicle body structure includes a center pillar 1, a front door, a rear door, a floor panel 4 arranged at the bottom of the passenger's room, a floor tunnel 5 formed to project upward at the center of the floor panel 4 of the vehicle's width direction and also extend in the fore-and-aft direction of the vehicle body, and a passenger's seat 7 arranged on the floor panel 4. The structure further includes a load-direction converting member 28 for transmitting the impact load toward the floor tunnel 5. The load-direction converting member 28 is formed with a lower frame 21a of a seat back frame 21 as the framework of the passenger's seat 7.

Abstract: A side structure is provided to restrict the rotation of a seat when a side impact is exerted on a vehicle body. In order to reinforce the passenger's seat 7 in a vehicle's width direction, the side structure includes a load-direction converting member 24 arranged in the passenger's seat 7 to extend in the vehicle's width direction. A center pillar 1 has an engagement member 25 attached to an inner pillar member 12. When a side impact is applied on the vehicle body, the engagement member 25 engages with an outermost end 24a of the member 24 to prevent the passenger's seat from rotating.

Abstract: A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5×1015 cm−2; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film.

Abstract: A semiconductor device manufacturing method having a copper wiring, comprises the steps of forming a second insulating film for covering the wiring on a first insulating film, forming a third insulating film which is made of material different from the second insulating film on the second insulating film, coating a resist on the third insulating film and then forming an opening over the wiring by exposing and developing the resist, forming a hole or groove in the third insulating film by etching the third insulating film via the opening, removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove, and forming a metal film in the hole or groove.

Abstract: A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.

Abstract: The semiconductor device manufacturing method includes the step of forming a second tungsten film on a first tungsten film, which is formed by using a reduction gas not-containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film after the first tungsten film has been exposed to the gas containing the diborane.

Abstract: A manufacturing method of a semiconductor device of the present invention comprises the steps of forming an amorphous layer on an upper layer of the impurity diffusion layer made of silicon by virtue of ion-implantation, forming a cobalt film on the impurity diffusion layer, forming a cobalt silicide layer made of Co.sub.2 Si or CoSi on an upper layer of the amorphous layer at a low temperature by reacting the cobalt film to silicon in the impurity diffusion layer in virtue of first annealing, then removing the cobalt film which has not reacted, and changing Co.sub.2 Si or CoSi constituting the cobalt silicide layer into CoSi.sub.2 to have low resistance and also rendering the cobalt silicide layer to enter into a depth identical to or deeper than an initial depth of the amorphous layer in virtue of second annealing.

Abstract: A monitored state display unit for a monitoring system which has an object of improving the response to information request and easily determining fault point/fault condition. The display unit comprises event state information processing means which requests a collecting device to collect event information, and gives instructions as to the screen display method according to the state on receipt of the response notification to collection request or the state change information from the collecting device, screen information control means which controls the output of updating/displaying of displayed screen to a display means and receives the instruction input from an instruction input means, and screen transmission information control means which requests information necessary for the screen to be displayed next from the event state information processing means on receipt of the notification of input of instruction information.

Abstract: The surface of a barrier layer interposed between a silicon substrate and aluminum wiring connected thereto is oxidized by heat treatment at 350.degree. to 450.degree. C. in an atmosphere having substantially the same composition as that of air or immersion in an oxidizing chemical to form an oxide film on the surface, and a wiring layer is then formed thereon. The presence of the oxide film inhibits interdiffusion between the silicon substrate and the aluminum wiring and reaction between the aluminum wiring and the barrier layer. Since this oxide film is formed by oxidation at the atmospheric pressure, the oxide film is not excessively oxidized even if it is exposed in air at a relatively high temperature of about 300.degree. C. The oxide film having a thickness and properties which produce the tunnel effect can be formed with good reproducibility.

Abstract: A first layer-wiring formed of a material soluble in a solution containing hydrofluoric acid (HF) is protected in an insulating layer. A second layer-wiring insulatingly overlying the first layer is connected with the first layer-wiring via a third layer-wiring which is resistant to a solution containing HF. When contact holes are opened through the insulating layer so as to lead out the first layer-wiring and/or a part of the semiconductor substrate, the first layer-wiring is not exposed to HF containing solution for cleaning the exposed materials in the opened holes. Accordingly, a material having small electrical conductivity but soluble by the HF can be employed for the layer-wiring allowing a high density integration as well good electrical contact with the Si substrate and with other multi-layer wirings.

Abstract: Compounds of the general formula ##STR1## wherein Xn is 2-Cl, 3-Cl, 2,3-Cl.sub.2 or 3-CF.sub.3, andR is hydrogen or acetyl,with the proviso that Xn is 2,3-Cl.sub.2 in the case of R being hydrogen, are outstanding effective fungicides.

Abstract: A novel protein adsorbent having a group of the general formula ##STR1## wherein X is hydrogen, halogen, amino, lower alkyl or lower alkoxycarbonyl as a ligand, is useful for the purification of urokinase by hydrophobic chromatography, particularly for the removal of the kinds of pyrogen that can only be removed with great difficulty by affinity chromatography on the ordinal adsorbent of urokinase.

Abstract: Compounds of the general formula ##STR1## wherein X is halogen, lower alkyl or lower haloalkyl, andn is 0, 1 or 2;are outstanding effective fungicides.