Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.

Abstract: Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.

Abstract: Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39?(Nb/(Ti+Nb))?0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter.

Abstract: A sputtering target of sintered Ti—Nb based oxide is provided. The sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39?(Nb/(Ti+Nb))?0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference or protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting or antireflection film, or an interference filter.

Abstract: A ferromagnetic sputtering target having a composition comprising 5 to 50 mol % of Pt, 5 to 15 mol % of SiO2, 0.05 to 0.60 mol % of Sn, and Fe as the balance, wherein the Sn is contained in SiO2 grains (B) dispersed in a metal base (A). Provided is a nonmagnetic grain-dispersed ferromagnetic sputtering target which can suppress abnormal electric discharge of the oxide that may cause particle generation during sputtering.

Abstract: A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

Abstract: Provided is a sputtering target for a magnetic recording film containing SiO2, wherein the sputtering target for a magnetic recording film contains B (boron) in an amount of 10 to 1000 wtppm. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, and realizing a stable discharge with a magnetron sputtering device.

Abstract: A thin film comprising titanium oxide as its main component, wherein the thin film includes titanium, oxygen and copper, content of Ti is 29.0 at % or higher and 34.0 at % or less and content of Cu is 0.003 at % or higher and 7.7 at % or less with remainder being oxygen and unavoidable impurities, and ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher.

Abstract: Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO2, 0.05 to 0.60 mol % of Sn, with Co as a remainder thereof, wherein the Sn is contained in SiO2 particles (B) dispersed in a metal substrate (A). The method yields a ferromagnetic sputtering target containing dispersed nonmagnetic particles. The target can prevent the abnormal electrical discharge of oxides which causes the generation of particles during sputtering.

Abstract: A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84?x?0.98, 0<y?0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Abstract: A ferromagnetic material sputtering target which is a sintered compact sputtering target made of a metal having Co as its main component, and nonmetallic inorganic material particles, wherein a plurality of metal phases having different saturated magnetization exist, and the nonmetallic inorganic material particles are dispersed in the respective metal phases. By increasing the pass-through flux of the sputtering target, it is possible to obtain a stable discharge. Moreover, it is also possible to obtain a ferromagnetic material sputtering target capable of obtaining a stable discharge in a magnetron sputtering device and which has a low generation of particles during sputtering. Thus, this invention aims to provide a ferromagnetic material sputtering target for use in the deposition of a magnetic thin film of a magnetic recording medium, and particularly of a magnetic recording layer of a hard disk adopting the perpendicular magnetic recording system.

Abstract: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

Abstract: The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure.

Abstract: A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn1?xGaxSe2?y (provided that x and y respectively represent atomic ratios), a composition range of 0<x?0.5, 0?y?0.04, and a relative density of 90% or higher. Specifically, a CIGS quaternary alloy sputtering target of high density and low oxygen concentration, and a CIGS quaternary alloy sputtering target comprising the intended bulk resistance.

Abstract: A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 m?·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low.

Abstract: A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2 Ti+0.5 Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter.

Abstract: A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter.

Abstract: An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.