Abstract: An organic device includes a pixel region which is disposed above a first main surface of a substrate and in which a plurality of pixels are disposed, a peripheral region disposed outside the pixel region above the first main surface, an external connection electrode disposed in the peripheral region above the first main surface, a first sealing film disposed above the external connection electrode, and a second sealing film which is disposed above the external connection electrode and a material of which is different from a material of the first sealing film, wherein the second sealing film is disposed above the first sealing film, and in the peripheral region, the organic device is provided with, in the first sealing film, an opening which exposes the external connection electrode and, between the opening and the pixel region, a first groove in which the second sealing film is disposed.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: An organic light emitting element includes a reflection layer, a first electrode, an organic layer including a light emitting layer, and a second electrode, arranged in this order from a side of a substrate. The reflection layer includes a first portion having a first thickness and a second portion having a second thickness smaller than the first thickness. The first electrode overlaps with the second portion, and at least part of an edge of the first electrode overlaps with the second portion in a planar view with respect to the substrate.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: The present disclosure provides a light-emitting element having an emission region and a contact region. In the emission region the light-emitting element has, a wiring layer, an interlayer insulating layer, a reflective layer, an optical adjustment layer, a first electrode, a light-emitting layer, and a second electrode, in this order from a substrate side; and in the contact region has, the wiring layer, a conductor, the first electrode, the light-emitting layer, and the second electrode, in this order from the substrate side. The conductor is electrically connected to both the first electrode and the wiring layer. A shortest distance between the first electrode and the substrate in the contact region is equal to or greater than a shortest distance between the reflective layer and the substrate in the emission region.

Abstract: A semiconductor apparatus comprises a first semiconductor region including a first surface and a second surface, in which a semiconductor of a first conductivity type is arranged, a second semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface, a third semiconductor region of a second conductivity type, which is arranged in a region between the second semiconductor region and the second surface and on a side portion of the second semiconductor region, a fourth semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface; and a fifth semiconductor region of the second conductivity type, which is arranged in a region between the fourth semiconductor region and the second surface and on a side portion of the fourth semiconductor region.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A semiconductor apparatus comprises a first semiconductor region including a first surface and a second surface, in which a semiconductor of a first conductivity type is arranged, a second semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface, a third semiconductor region of a second conductivity type, which is arranged in a region between the second semiconductor region and the second surface and on a side portion of the second semiconductor region, a fourth semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface; and a fifth semiconductor region of the second conductivity type, which is arranged in a region between the fourth semiconductor region and the second surface and on a side portion of the fourth semiconductor region.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.