Patents by Inventor Hideshi Kuwabara
Hideshi Kuwabara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20160013224Abstract: A photoelectric conversion device includes an element surrounding an active region including first and second areas verging each other at a virtual line, a charge accumulation region arranged in the first area, a floating diffusion region arranged across the first and second areas, a transfer gate electrode, and a first semiconductor region including a portion arranged between the charge accumulation region and the element isolation so as to surround at least part of the charge accumulation region, and a portion arranged in the second area. A width of the second area in a direction parallel to the virtual line is smaller than a width of the first area in the direction.Type: ApplicationFiled: July 1, 2015Publication date: January 14, 2016Inventors: Hideshi Kuwabara, Mari Isobe
-
Patent number: 9171880Abstract: A photoelectric conversion device, comprising a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided adjacent to the first semiconductor region, a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region, and a gate electrode provided between the second semiconductor region and the third semiconductor region, wherein the second semiconductor region is provided at a position away from the gate electrode, and the semiconductor substrate includes a region of a second conductivity type within a region extending from an edge of the second semiconductor region to below the gate electrode.Type: GrantFiled: July 1, 2014Date of Patent: October 27, 2015Assignee: Canon Kabushiki KaishaInventors: Shinji Kodaira, Hideshi Kuwabara, Tomohisa Kinugasa
-
Patent number: 9093346Abstract: A photoelectric conversion device including a photoelectric conversion element including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided in contact with the first semiconductor region, a third semiconductor region of the first conductivity type provided apart from the second semiconductor region, a fourth semiconductor region of a second conductivity type provided between the second and the third semiconductor region, and a fifth semiconductor region of the first conductivity type provided apart from the third semiconductor region, wherein an impurity concentration of the third semiconductor region is lower than that of the fifth semiconductor region, and a depth of a lower-edge of the third semiconductor region from a surface of the semiconductor substrate is larger than that of a lower-edge of the fifth semiconductor region.Type: GrantFiled: July 2, 2014Date of Patent: July 28, 2015Assignee: Canon Kabushiki KaishaInventor: Hideshi Kuwabara
-
Publication number: 20150029363Abstract: A photoelectric conversion device, comprising a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided adjacent to the first semiconductor region, a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region, and a gate electrode provided between the second semiconductor region and the third semiconductor region, wherein the second semiconductor region is provided at a position away from the gate electrode, and the semiconductor substrate includes a region of a second conductivity type within a region extending from an edge of the second semiconductor region to below the gate electrode.Type: ApplicationFiled: July 1, 2014Publication date: January 29, 2015Inventors: Shinji Kodaira, Hideshi Kuwabara, Tomohisa Kinugasa
-
Publication number: 20150028401Abstract: A photoelectric conversion device including a photoelectric conversion element including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided in contact with the first semiconductor region, a third semiconductor region of the first conductivity type provided apart from the second semiconductor region, a fourth semiconductor region of a second conductivity type provided between the second and the third semiconductor region, and a fifth semiconductor region of the first conductivity type provided apart from the third semiconductor region, wherein an impurity concentration of the third semiconductor region is lower than that of the fifth semiconductor region, and a depth of a lower-edge of the third semiconductor region from a surface of the semiconductor substrate is larger than that of a lower-edge of the fifth semiconductor region.Type: ApplicationFiled: July 2, 2014Publication date: January 29, 2015Inventor: Hideshi Kuwabara
-
Patent number: 8917984Abstract: A photoelectric conversion apparatus includes a first line sensor unit in which a plurality of pixels are arranged in a first direction, a second line sensor unit in which a plurality of pixels are arranged in a second direction, and a third line sensor unit in which a plurality of pixels are arranged in a third direction. Each of the pixels includes a photoelectric conversion portion and a transistor. The second direction is perpendicular to the first direction and the third direction is not perpendicular to the first and the second directions. A channel of the transistor is provided in the first direction or the second direction.Type: GrantFiled: February 22, 2013Date of Patent: December 23, 2014Assignee: Canon Kabushiki KaishaInventor: Hideshi Kuwabara
-
Patent number: 7247899Abstract: In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.Type: GrantFiled: September 10, 2004Date of Patent: July 24, 2007Assignee: Canon Kabushiki KaishaInventors: Hideshi Kuwabara, Hiroshi Yuzurihara, Takayuki Kimura, Mahito Shinohara
-
Publication number: 20050056905Abstract: In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.Type: ApplicationFiled: September 10, 2004Publication date: March 17, 2005Applicant: Canon Kabushiki KaishaInventors: Hideshi Kuwabara, Hiroshi Yuzurihara, Takayuki Kimura, Mahito Shinohara
-
Patent number: 6156657Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.Type: GrantFiled: April 25, 1996Date of Patent: December 5, 2000Assignee: Canon Kabushiki KaishaInventors: Hideshi Kuwabara, Yasushi Kawasumi, Tetsuo Asaba, Kenji Makino, Yuzo Kataoka, Yasuhiro Sekine, Shigeru Nishimura
-
Ink jet recording head having an oriented p-n junction diode, and recording apparatus using the head
Patent number: 5975685Abstract: An ink jet head provided with discharging orifices for discharging ink, which includes a substrate having a supporting member having at least a surface having substantially insulating properties and a plurality of diodes provided on the supporting member, the diodes each comprising a polycrystalline silicon layer and at least one metal silicide layer, wherein the polycrystalline silicon layer has a p-n junction surface therein.Type: GrantFiled: December 15, 1997Date of Patent: November 2, 1999Assignee: Canon Kabushiki KaishaInventors: Tetsuo Asaba, Shigeyuki Matsumoto, Hideshi Kuwabara -
Patent number: 5963812Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.Type: GrantFiled: March 10, 1997Date of Patent: October 5, 1999Assignee: Canon Kabushiki KaishaInventors: Yuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
-
Patent number: 5760421Abstract: A semiconductor device having a plurality of elements arranged in a one-dimensional or a two-dimensional array includes indices for identifying positions of elements in the device formed in at least one of a horizontal direction and a vertical direction on a semiconductor layer externally of the array of the elements. The indices comprise contact sections connecting different layers of different configurations. The indices can be through-holes or contacts of different shapes, which are different in shape at every 10n-th row and every 100m-th column of the array of the semiconductor elements for use as the addresses of the elements.Type: GrantFiled: October 28, 1996Date of Patent: June 2, 1998Assignee: Canon Kabushiki KaishaInventors: Hidekazu Takahashi, Hideshi Kuwabara
-
Patent number: 5610435Abstract: A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.Type: GrantFiled: June 18, 1996Date of Patent: March 11, 1997Assignee: Canon Kabushiki KaishaInventors: Hidenori Watanabe, Junichi Hoshi, Yutaka Yuge, Akira Okita, Hideshi Kuwabara
-
Patent number: 5580808Abstract: A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.Type: GrantFiled: October 24, 1994Date of Patent: December 3, 1996Assignee: Canon Kabushiki KaishaInventors: Yuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
-
Patent number: 5569614Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.Type: GrantFiled: May 5, 1995Date of Patent: October 29, 1996Assignee: Canon Kabushiki KaishaInventors: Yuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
-
Patent number: 5534069Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.Type: GrantFiled: July 19, 1993Date of Patent: July 9, 1996Assignee: Canon Kabushiki KaishaInventors: Hideshi Kuwabara, Yasushi Kawasumi, Tetsuo Asaba, Kenji Makino, Yuzo Kataoka, Yasuhiro Sekine, Shigeru Nishimura
-
Patent number: 5527730Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.Type: GrantFiled: April 19, 1995Date of Patent: June 18, 1996Assignee: Conon Kabushiki KaishaInventors: Yuzo Kayaoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
-
Patent number: 5433813Abstract: In a semiconductor device manufacturing apparatus of a reactive ion etching apparatus or the like, only a DC signal in a high frequency electric field can be accurately detected in a real-time manner without any noise, thereby enabling a temperature, a potential, or another parameter of a substrate (wafer) to be accurately measured. For this purpose, according to this manufacturing apparatus, a transmission line filter (coaxial cable) 8 having an electric length ((2n+1).lambda./4) that is an odd-number times as long as 1/4 of the wavelength .lambda. of a high frequency power source 1 is connected between a thermocouple or electrode 7 and a voltmeter 10 to measure a temperature or another parameter of a wafer (substrate) 5. A high frequency signal is separated by the transmission line filter, and a high frequency impedance is short-circuited by a capacitance 9 resulting in the high frequency component being removed, and only a DC signal being provided to the voltmeter 10.Type: GrantFiled: November 3, 1993Date of Patent: July 18, 1995Assignee: Canon Kabushiki KaishaInventor: Hideshi Kuwabara