Abstract: NMOS transistors which are provided adjacently to each other in the direction of the formation of bit lines between word lines are paired. The drains of the NMOS transistors are connected in common through a common node to form a memory cell. Between the common node and the bit line is provided a region where a contact is placed. Furthermore, regions where the contact is placed in the respective NMOS transistors are provided on a layout. By these combinations, data are stored.

Abstract: An address generator circuit (21A) includes a shift register (28) for storing therein address data (AD) to be outputted. A plurality of memory circuits which are equal in one of the numbers of bits of X and Y addresses for specifying rows or columns of memory cell arrays and different in the other number, apply data to scan paths so that less significant bits of the addresses having the same number of bits are stored in a position closer to an input terminal. An XOR gate (27A) in the address generator circuit (21A) generates write data (DI) for writing RAMs (31, 32) from data (X0, Y0) stored in predetermined registers of the shift register (28).

Abstract: The scale of a pseudo-random number generating circuit that can select normal or reverse order in which pseudo-random numbers are generated is reduced. The outputs of first and second NOR circuits are selected by a selecting circuit and sent to a parity check circuit. The output of the parity check circuit is directly sent to the right and left shift input terminals of a bidirectional shift register.

Abstract: It is an object to enable access orders for a memory circuit used in the digital image compression technology only with counting-up operation by a counter circuit. The correspondence between outputs of first and second decoders (4, 5) forming a two-port RAM (3) is made different according to two operation modes. That is to say, while outputs 0, 1, 2, . . . , 63 of the first decoder (4) are arranged corresponding to an access order of increment, outputs 0, 1, 2, . . . , 63 of the second decoder (5) are arranged in correspondence with the outputs of the first decoder (4) on the basis of an access order in the zig-zag scan, here. An address generating circuit (7) as a counter circuit supplies common addresses to the two decoders (4, 5). Thus, while the two-port memory cells are respectively accessed in the increment order by outputs of the first decoder (4), they are also accessed in the operation mode for the zig-zag scan by outputs of the second decoder (5).

Abstract: Memory cells having a stable write operation are formed in an array on a CMOS gate array semiconductor substrate. Each memory cell includes mutually adjacent transistors from a first pair of complementary conductivity type MOS transistor rows. These transistors are used to form a flip-flop and first and second access gates. The memory cell further includes mutually adjacent MOS transistors from a second pair of complementary conductivity type MOS transistor rows. These transistors are used to form an inverter and a third access gate connected to the output of the inverter. The input of the inverter is connected to one end of the flip-flop. The inputs of the first and second access gates are connected to bit lines through which complementary data signals are applied. The gates of the first and second access gate transistors are connected to a write word line.

Abstract: A semiconductor integrated circuit device easily finds whether an error is located in an X decoder or a Y decoder. Circuit generating full cyclic sequences (36) and (38) are disposed which correspond to an X decoder (32) and a Y decoder (33), respectively, of a memory circuit (21). A specific state detection circuit (37) detects a specific address state of the circuit generating full cyclic sequence (36) so that one of an X address and a Y address is changed only after the other one of the X address and the Y address is thoroughly changed. Since when the error was created is known, which one of the X decoder and the Y decoder is responsible for the error is easily found.

Abstract: Memory cells having a stable write operation are formed in an array on a CMOS gate array semiconductor substrate. Each memory cell includes mutually adjacent transistors from a first pair of complementary conductivity type MOS transistor rows. These transistors are used to form a flip-flop and first and second access gates. The memory cell further includes mutually adjacent MOS transistors from a second pair of complementary conductivity type MOS transistor rows. These transistors are used to form an inverter and a third access gate connected to the output of the inverter. The input of the inverter is connected to one end of the flip-flop. The inputs of the first and second access gates are connected to bit lines through which complementary data signals are applied. The gates of the first and second access gate transistors are connected to a write word line.

Abstract: A scan path composed of a plurality of scan registers comprises a first test mode for testing a RAM, a second test mode for testing a logic circuit and a normal mode. In the first test mode, expected value data is set in each of latch circuits of the scan register. The expected value data held by the latch circuits are determined whether their logics coincide with data read from the RAM in a determination circuit. As a result of this determination, when a fault is occurring in the RAM, the logic of the data held by the latch circuit is inverted. In the second test mode, test data is set in each of latch circuits of the scan register, and the test data set are supplied to the logic circuit. In the normal mode, data read from the RAM is supplied to the logic circuit through the selector circuit without passing through the shift register.

Abstract: An IC card comprises an integrated circuit having a memory circuit and a shift register formed thereon in a package. The memory circuit is selectively disabled by an external signal. The memory circuit comprises a plurality of data terminals for inputting and outputting data, one of which connected to a serial input terminal of the shift register. Address information is serially applied bit by bit from outside to the data terminal when the memory circuit is in the disabled state. The address information is converted into parallel address signals by the shift register to be applied to the address terminals of the memory circuit, so that the number of the external terminals can be reduced. A binary digit string in accordance with an exhaustive random sequence is used as the address information applied in series, thereby increasing the speed of the data transfer.

Abstract: A scan-path comprises a plurality of scan registers connected in series. Expected value data are inputted to the plurality of scan registers by a serial shift operation. Data read out from a RAM which is a circuit under test are applied to parallel input terminals of the scan registers, respectively. If the data applied to the parallel input terminals are different from the expected value data, the data held in the scan registers are inverted. After data of all addresses in the RAM are read out, the data held in the scan registers are read out by the serial shift operation. If any of the data as read out is inverted, it is determined that the RAM is defective.

Abstract: A semiconductor integrated circuit for use in, for example, computers, electronic control systems and the like, is provided. The integrated circuit contains a plurality of tested circuits which need be tested, prior to actual use, as to whether they can perform their assigned logic functions. A pair of shift registers are connected to the input and output of each tested circuit, respectively. An externally applied selection signal selects only one pair of shift registers at a time so that a particular tested circuit is specified and the application of a test signal and the derivation of a test result to and from the specified tested circuit become possible. The structure and testing method enables reduction of the number of clock signals required for testing and, hence, the number of clock signal input terminals on the integrated circuit.

Abstract: A semiconductor test device including a function test algorithmic pattern generator which comprises: an ALU unit with shift-in function for conducting a predetermined arithmetical and logical operation against the base data or the output of an ALU output register; the ALU output register being designed to store the output of the ALU and output a function test algorithmic pattern; and a parity detection circuit which conducts a parity detection against an arbitrary group of bits of the ALU output register, and the detection output is input into a shift-in input of the ALU.

Abstract: A connection of each of the terminals of a semiconductor device under test (DUT) with a test signal provided from a tester and a connection of each of the above stated terminals with a power supply system in the tester are selected in an arbitrary manner based on the serial data for designating connections provided from the tester.

Abstract: Memory cells having a stable write operation are formed in an array on a CMOS gate array semiconductor substrate. Each memory cell includes mutually adjacent transistors from a first pair of complementary conductivity type MOS transistor rows. These transistors are used to form a flip-flop and first and second access gates. The memory cell further includes mutually adjacent MOS transistors from a second pair of complementary conductivity type MOS transistor rows. These transistors are used to form an inverter and a third access gate connected to the output of the inverter. The input of the inverter is connected to one end of the flip-flop. The inputs of the first and second access gates are connected to bit lines through which complementary data signals are applied. The gates of the first and second access gate transistors are connected to a write word line.