Patents by Inventor Hidetami Yaegashi
Hidetami Yaegashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11467497Abstract: A method of forming a mask includes forming a base film containing a treatment agent on an object, forming a photosensitive organic film on the base film, forming an infiltrated portion by infiltrating the treatment agent into a lower portion of the photosensitive organic film, selectively exposing the photosensitive organic film to form a first region soluble in an alkaline solution and a second region insoluble in the alkaline solution, forming a third region insoluble in the alkaline solution in the infiltrated portion in the first region by causing a reaction between the first region and the treatment agent, developing the photosensitive organic film to remove a fourth region that is in the first region and other than the third region while leaving intact the second region and the third region, and etching the photosensitive organic film to remove one of the second region and the third region.Type: GrantFiled: August 16, 2019Date of Patent: October 11, 2022Assignee: Tokyo Electron LimitedInventor: Hidetami Yaegashi
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Patent number: 11205571Abstract: There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.Type: GrantFiled: September 19, 2019Date of Patent: December 21, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Hidetami Yaegashi, Soichiro Okada
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Publication number: 20210325780Abstract: A method of producing a resist film includes: a laminating step of fabricating a workpiece by laminating the resist film on an etching target film; and an infiltration step of exposing the workpiece to a gas of a precursor containing a metal having a higher EUV light absorption rate than carbon to infiltrate the metal into the resist film.Type: ApplicationFiled: August 22, 2019Publication date: October 21, 2021Inventors: Kazuki YAMADA, Kyohei KOIKE, Masatoshi YAMATO, Hidetami YAEGASHI
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Publication number: 20210318618Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, performing a treatment of decreasing a polarity of the base film when the polarity of the base film is higher than a polarity of the resist solution, and performing a treatment of increasing the polarity of the base film when the polarity of the base film is lower than the polarity of the resist solution.Type: ApplicationFiled: August 21, 2019Publication date: October 14, 2021Inventors: Satoru SHIMURA, Soichiro OKADA, Masashi ENOMOTO, Hidetami YAEGASHI
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Patent number: 10741444Abstract: In a method according to an exemplary embodiment, a substrate is prepared in a chamber. A patterned resist mask has been formed on a first region of the substrate. A surface of the substrate in a second region is exposed. A film is formed on the substrate in the chamber by sputtering. The film is formed on the substrate in a manner that particles emitted obliquely downward from a target are caused to be incident onto the substrate.Type: GrantFiled: May 8, 2019Date of Patent: August 11, 2020Assignee: TOKYO ELECTRON LIMITEDInventor: Hidetami Yaegashi
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Publication number: 20200090927Abstract: There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.Type: ApplicationFiled: September 19, 2019Publication date: March 19, 2020Inventors: Hidetami Yaegashi, Soichiro Okada
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Publication number: 20200066536Abstract: A method of forming a mask includes forming a base film containing a treatment agent on an object, forming a photosensitive organic film on the base film, forming an infiltrated portion by infiltrating the treatment agent into a lower portion of the photosensitive organic film, selectively exposing the photosensitive organic film to form a first region soluble in an alkaline solution and a second region insoluble in the alkaline solution, forming a third region insoluble in the alkaline solution in the infiltrated portion in the first region by causing a reaction between the first region and the treatment agent, developing the photosensitive organic film to remove a fourth region that is in the first region and other than the third region while leaving intact the second region and the third region, and etching the photosensitive organic film to remove one of the second region and the third region.Type: ApplicationFiled: August 16, 2019Publication date: February 27, 2020Inventor: Hidetami YAEGASHI
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Patent number: 10573530Abstract: Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer; forming a patterned EUV resist layer on the intermediate layer; forming a pattern on the acrylic resin layer by etching the intermediate layer and the acrylic resin layer with the EUV resist layer as an etching mask; removing the EUV resist layer and the intermediate layer after the pattern is formed on the acrylic resin layer; and smoothing a surface of the acrylic resin layer after the EUV resist layer and the intermediate layer are removed.Type: GrantFiled: February 13, 2017Date of Patent: February 25, 2020Assignee: Tokyo Electron LimitedInventor: Hidetami Yaegashi
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Patent number: 10539876Abstract: Provided is a method for forming a hole pattern in a resist film. The method includes forming a resist film on a workpiece; exposing the resist film using a bright field mask; removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film; modifying a sidewall portion of the resist film after the removing the unexposed portion of the resist film; and removing an exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film. The modifying the sidewall portion of the resist film is a processing of reducing solubility of the sidewall portion of the resist film in the second developer.Type: GrantFiled: December 16, 2016Date of Patent: January 21, 2020Assignee: Tokyo Electron LimitedInventor: Hidetami Yaegashi
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Publication number: 20190355613Abstract: In a method according to an exemplary embodiment, a substrate is prepared in a chamber. A patterned resist mask has been formed on a first region of the substrate. A surface of the substrate in a second region is exposed. A film is formed on the substrate in the chamber by sputtering. The film is formed on the substrate in a manner that particles emitted obliquely downward from a target are caused to be incident onto the substrate.Type: ApplicationFiled: May 8, 2019Publication date: November 21, 2019Applicant: Tokyo Electron LimitedInventor: Hidetami YAEGASHI
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Patent number: 10366888Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.Type: GrantFiled: June 14, 2018Date of Patent: July 30, 2019Assignees: Tokyo Electron Limited, TOKYO OHKA KOGYO CO., LTD.Inventors: Kazuki Yamada, Masatoshi Yamato, Hidetami Yaegashi, Yoshitaka Komuro, Takehiro Seshimo, Katsumi Ohmori
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Patent number: 10317797Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.Type: GrantFiled: November 20, 2017Date of Patent: June 11, 2019Assignees: Tokyo Electron Limited, TOKYO OHKA KOGYO CO., LTD.Inventors: Hidetami Yaegashi, Kenichi Oyama, Katsumi Ohmori, Yoshitaka Komuro, Takehiro Seshimo
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Patent number: 10211050Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.Type: GrantFiled: August 16, 2016Date of Patent: February 19, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Hidetami Yaegashi, Kenichi Oyama, Masatoshi Yamato, Tomohiro Iseki, Toyohisa Tsuruda
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Publication number: 20180374695Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.Type: ApplicationFiled: June 14, 2018Publication date: December 27, 2018Inventors: Kazuki YAMADA, Masatoshi YAMATO, Hidetami YAEGASHI, Yoshitaka KOMURO, Takehiro SESHIMO, Katsumi OHMORI
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Patent number: 10074557Abstract: A first film having a repetitive line pattern is formed on an under film. A second film is formed on a side surface of the first film. The second film has an etching selectivity different from that of the first film. A third film is formed on an upper surface and a side surface of the second film. The third film has an etching selectivity different from those of the first and second films. A resist pattern with an opening is formed on the third film. A recess that exposes upper surfaces of the first, second and third films is formed by etching the third film by using the resist pattern as an etching mask. An upper surface of the under film is exposed by etching the first and third films. A through hole that penetrates through the under film is formed by etching the under film.Type: GrantFiled: May 23, 2017Date of Patent: September 11, 2018Assignee: Tokyo Electron LimitedInventor: Hidetami Yaegashi
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Publication number: 20180143536Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.Type: ApplicationFiled: November 20, 2017Publication date: May 24, 2018Inventors: Hidetami YAEGASHI, Kenichi OYAMA, Katsumi OHMORI, Yoshitaka KOMURO, Takehiro SESHIMO
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Publication number: 20170352584Abstract: A first film having a repetitive line pattern is formed on an under film. A second film is formed on a side surface of the first film. The second film has an etching selectivity different from that of the first film. A third film is formed on an upper surface and a side surface of the second film. The third film has an etching selectivity different from those of the first and second films. A resist pattern with an opening is formed on the third film. A recess that exposes upper surfaces of the first, second and third films is formed by etching the third film by using the resist pattern as an etching mask. An upper surface of the under film is exposed by etching the first and third films. A through hole that penetrates through the under film is formed by etching the under film.Type: ApplicationFiled: May 23, 2017Publication date: December 7, 2017Inventor: Hidetami YAEGASHI
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Patent number: 9818612Abstract: Disclosed is a method for manufacturing a semiconductor device. The method includes: a first pattern forming step of forming, on a pattern forming target film, a first film that is patterned to have a first pattern that includes lines which are aligned with each other with spaces of a predetermined interval being interposed therebetween, and include a portion separated by using a first cut mask; a step of forming a second film to cover a surface of the first film; and a second pattern forming step of forming a pattern forming target film that is patterned to have a second pattern, by separating a portion of the space of the first step using a second cut mask. The first and second cut mask includes a plurality of openings or light shielding portions that have equal shapes, respectively.Type: GrantFiled: January 28, 2016Date of Patent: November 14, 2017Assignee: TOKYO ELECTRON LIMITEDInventor: Hidetami Yaegashi
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Publication number: 20170236720Abstract: Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer; forming a patterned EUV resist layer on the intermediate layer; forming a pattern on the acrylic resin layer by etching the intermediate layer and the acrylic resin layer with the EUV resist layer as an etching mask; removing the EUV resist layer and the intermediate layer after the pattern is formed on the acrylic resin layer; and smoothing a surface of the acrylic resin layer after the EUV resist layer and the intermediate layer are removed.Type: ApplicationFiled: February 13, 2017Publication date: August 17, 2017Inventor: Hidetami Yaegashi
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Publication number: 20170184972Abstract: Provided is a method for forming a hole pattern in a resist film. The method includes forming a resist film on a workpiece; exposing the resist film using a bright field mask; removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film; modifying a sidewall portion of the resist film after the removing the unexposed portion of the resist film; and removing an exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film. The modifying the sidewall portion of the resist film is a processing of reducing solubility of the sidewall portion of the resist film in the second developer.Type: ApplicationFiled: December 16, 2016Publication date: June 29, 2017Inventor: Hidetami Yaegashi