Abstract: A substrate processing method performs a photolithography processing on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.

Abstract: A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.

Abstract: A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract: Disclosed is a method for manufacturing a semiconductor device. The method includes: a first pattern forming step of forming, on a pattern forming target film, a first film that is patterned to have a first pattern that includes lines which are aligned with each other with spaces of a predetermined interval being interposed therebetween, and include a portion separated by using a first cut mask; a step of forming a second film to cover a surface of the first film; and a second pattern forming step of forming a pattern forming target film that is patterned to have a second pattern, by separating a portion of the space of the first step using a second cut mask. The first and second cut mask includes a plurality of openings or light shielding portions that have equal shapes, respectively.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.

Abstract: A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.

Abstract: A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract: Disclosed is a semiconductor device manufacturing method that manufactures a semiconductor device having a resist pattern which is excellent in roughness property and line width property. The method includes forming a film which is elastic and incompatible with a resist patterned on an object to be processed to cover the surface of the resist, and heating the object to be processed formed with the film.

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract: Provided is a pattern forming method which includes forming fine lines and spaces in a thin film on a substrate; forming a first pattern which is a reverse pattern of a trench pattern for forming wiring by cutting the lines; and forming a second pattern which will become the trench pattern by reversing the first pattern.

Abstract: A disclosed method of forming a mask pattern includes forming a first resist film on a film to be etched, opening portions on the first resist film at a predetermined pitch, a first film on the first resist film so as to cover sidewalls of the first opening portions, a second resist film, second opening portions alternately arranged with the first opening portions on the second resist film, and a second film on the second resist film so as to cover sidewalls of the second opening portions, and removing a part of the second film so that the second film is left as first sidewall portions, a part of the first resist film using the first sidewall portions as a mask to form third opening portions, and a part of the first film while leaving the first film as second sidewall portions to form fourth opening portions.

Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.

Abstract: A method of forming a mask pattern includes a first pattern forming step of etching an anti-reflection coating film by using as a mask a first line portion made up of a photo resist film formed on the anti-reflection film to form a pattern including a second line portion made up of the photo resist film and the anti-reflection film; an irradiation step of irradiating the photo resist film with electrons; a silicon oxide film forming step to cover the second line portion isotropically; and an etch back step of etching back the silicon oxide film such that the silicon oxide film is removed from the top of the second line portion as sidewalls of the second line portion. The method further includes a second pattern forming step of ashing the second line portion to form a mask pattern including a third line portion made up of the silicon oxide film and remains.

Abstract: A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a boundary layer forming unit for forming a boundary layer at sidewall portions and top portions of the first pattern; a second mask material layer forming unit for forming a second mask material layer so as to cover a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; a boundary layer etching unit for forming a second pattern by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths.