Abstract: A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

Abstract: A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

Abstract: A porous hollow fiber membrane that is suitable for treatment of liquid containing an inorganic substance and/or an organic substance, is obtained at a low cost performance, and has high water permeability performance, fretting resistance, and drying resistance. A deformed porous hollow fiber membrane according to the present invention is composed of a thermoplastic resin and includes a continuous asperity provided on the periphery in the longitudinal direction of the membrane, in which the periphery of the hollow fiber membrane in the circumferential direction includes continuous projected and depressed parts.

Abstract: In order to simplify the operation during a call, a communication terminal includes: a radio circuit and a wireless LAN circuit; a flash ROM storing user identification information for identifying a target to communicate and telephone book data in which the user identification information and multiple pieces of access information respectively corresponding to the radio circuit and the wireless LAN circuit are associated with each other; and a control portion to search the telephone book data, if the wireless LAN circuit becomes incommunicable with the other party's mobile phone during communication, to extract a mobile phone number which is related with the user identification information of the user of the other party's mobile phone and corresponds to the radio circuit, and to originate a call to the other party's mobile phone by the radio circuit using the extracted mobile phone number.

Abstract: Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Abstract: A hollow fiber membrane is produced through a thermally induced phase separation process by dissolving a highly hydrophilic polyamide resin in a high-boiling-point solvent such as an aprotic polar solvent at a temperature of not lower than 100° C. The hollow fiber membrane has a membrane surface having a water contact angle of not greater than 80 degrees, and has a water permeability of not less than 100 L/m2·atm·h and a 0.1-?m particle rejection percentage of not less than 90%.

Abstract: A hydrophilic filtration membrane having high chemical resistance, high strength, high water permeability and high blocking performance, and being superior in fouling resistance is provided. A hydrophilic filtration membrane containing a hydrophilic polyethersulfone having a contact angle of 65 to 74 degree, a molecular weight of 10,000 to 100,000, and the number of hydroxy groups of 0.6 to 1.4 per 100 polymerization repeating units. The hydrophilic filtration membrane may additionally contain a polyvinylpyrrolidone having a molecular weight of 10,000 to 1,300,000.

Abstract: A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate; making a hole in the stacked unit to pass through electrode layers and insulating layers of the stacked unit; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insulating layers; forming a metal film on a side wall of the trench; forming a cap film to cover the metal film and fill into the trench; performing heat treatment to form a compound on the side wall of the trench.

Abstract: A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.

Abstract: A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

Abstract: [Problem] A dope solution for membrane production comprising polyethersulfone having high strength, high water permeability, a high rejecting ability and excellent contamination resistance, a separation membrane, and a process for producing the separation membrane are provided. [Means for Resolution] A dope solution for membrane production comprising polyethersulfone, and a solvent for thermally induced phase separation, in which a member selected from the group consisting of 3-pyridinemethanol, 4-methyl-1,3-dioxolane-2-one, 4-benzylpiperidine, trimethyl phosphate, 1,3-dioxolane-2-one and mixtures thereof is used as the solvent.

Abstract: A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate, the stacked unit including a plurality of insulating layers alternately stacked with a plurality of electrode layers, the electrode layers being formed of a semiconductor; making a hole in the stacked unit to pass through the electrode layers and the insulating layers; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string by multiply connecting memory cells in the stacking direction, the memory cell including the electrode layer, the charge storage layer opposing the electrode layer, and the semiconductor layer opposing the charge storage layer; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insul

Abstract: A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed.

Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

Abstract: A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.

Abstract: A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed.

Abstract: A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.

Abstract: Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.