Abstract: Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Abstract: In order to simplify the operation during a call, a communication terminal includes: a radio circuit and a wireless LAN circuit; a flash ROM storing user identification information for identifying a target to communicate and telephone book data in which the user identification information and multiple pieces of access information respectively corresponding to the radio circuit and the wireless LAN circuit are associated with each other; and a control portion to search the telephone book data, if the wireless LAN circuit becomes incommunicable with the other party's mobile phone during communication, to extract a mobile phone number which is related with the user identification information of the user of the other party's mobile phone and corresponds to the radio circuit, and to originate a call to the other party's mobile phone by the radio circuit using the extracted mobile phone number.

Abstract: In order to reduce power consumption while an incoming call is detected by each of a plurality of communication methods, a mobile phone includes a radio circuit, a wireless LAN circuit, and a control portion to control power supply to them. The control portion cuts off power supply to the radio circuit when communication for a call by the wireless LAN circuit is established when power is supplied to both the radio circuit and the wireless LAN circuit.

Abstract: A production method for preparing a porous film of a poly(vinylidene fluoride) based resin which has a microstructure providing a satisfactory mechanical strength and permeation performance and is improved in hydrophilic property, without the precise control of temperature before cooling, as well as a porous film prepared by the above method is provided. The above method for producing a porous film wherein a porous film of a poly(vinylidene fluoride) based resin is prepared by dissolving the poly(vinylidene fluoride) based resin in a poor solvent through heating to form a liquid raw material for a film, and then cooling the liquid raw material to bring about a phase separation is characterized in that an organized clay being organized by a hydrophilic compound is dispersed in said liquid raw material for a film in an amount of 1 to 25 parts by weight relative to 100 parts by weight of the poly(vinylidene fluoride) based resin.

Abstract: A tuner extracts a digital broadcasting wave on a channel tuned in to, and demodulates the extracted digital broadcasting wave, to output a transport stream. A demultiplexer acquires various types of data from the transport stream. A CPU performs channel search processing when the timing of execution previously set has arrived (e.g., 4:00 a.m. on Thursday every week), and performs processing for acquiring channel information included in the digital broadcasting wave and storing, when a new channel is found, for example, channel information related to the new channel in a non-volatile memory.

Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

Abstract: A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

Abstract: A tuner extracts a digital broadcasting wave on a channel tuned in to, and demodulates the extracted digital broadcasting wave, to output a transport stream. A demultiplexer acquires various types of data from the transport stream. A CPU performs channel search processing when the timing of execution previously set has arrived (e.g., 4:00 a.m. on Thursday every week), and performs processing for acquiring channel information included in the digital broadcasting wave and storing, when a new channel is found, for example, channel information related to the new channel in a non-volatile memory.

Abstract: A sputtering apparatus includes a process chamber for accommodating a semiconductor wafer. A susceptor is disposed on the bottom of the interior of the process chamber, and a sputter target is disposed at the top of the process chamber. A cylindrical ion reflecting plate is disposed along the inner wall of the process chamber. A lower grounded component, which forms a path along which electrons are released, is disposed below the ion reflecting plate so as to surround the susceptor. A magnet is disposed behind the target outside the process chamber. Negative potentials are applied to the target and semiconductor wafer, and a positive potential is applied to the ion reflecting plate. The magnet forms a closed magnetic field for trapping electrons in a plasma on the surface of the target, and a divergent magnetic field for directing the electrons in the plasma to the lower grounded component.

Abstract: A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

Abstract: A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

Abstract: A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.