Abstract: A vehicle management system includes an imaging device provided in a shared vehicle to capture a plurality of passengers on the vehicle, a detection unit that detects that a user, who is one of the passengers, has performed a predetermined motion which is a motion registered in advance, based on a capturing result by the imaging device, and a controller that controls the vehicle based on a predetermined command, which is a command registered in advance as a command corresponding to the predetermined motion, when the predetermined motion is detected.

Abstract: A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×108 cm?2.

Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.

Abstract: A fall prevention system includes an image capturing unit that captures an image of a space to be monitored; a skeleton model generating unit that generates a skeleton model representing a person in the image captured by the image capturing unit; a determination unit that determines a state of a person corresponding to the skeleton model generated by the skeleton model generating unit, by distinguishing between the person standing up and the person sitting down, based on the skeleton model; and an operation processing unit capable of executing a fall prevention process that is a process according to a determination result by the determination unit, and that prevents the person from falling over, based on the determination result.

Abstract: An in-vehicle device includes a camera, a passenger detector, a goods detector, an association unit, and an in-vehicle controller. The camera images the inside of a vehicle. The passenger detector detects the passenger inside the vehicle based on an image captured by the camera. The goods detector detects the goods inside the vehicle based on the image captured by the camera. The association unit generates association information. The association information is obtained by associating specific goods detected by the goods detector with a specific passenger detected by the passenger detector based on the goods detected by the goods detector and the passenger detected by the passenger detector. The in-vehicle controller performs predetermined control based on the association information generated by the association unit.

Abstract: A passenger support system includes a speaker, cameras, a vibrator, a seat switch, and a control device. The control device issues destination approach information by the speaker before the vehicle arrives at the destination based on results from comparing the current location information of the vehicle with the destination information of passenger. After issuing the destination approach information, the control device identifies the seat position based on the images captured by the cameras and performs awakening action by the vibrator at the seat corresponding to the specified seat position. The control device stops the awakening action by the vibrator when a stop operation is received from the seat switch.

Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer.

Abstract: An in-vehicle device includes an odor sensor, an odor type determination unit, and an operation decision unit. The odor sensor is mounted on a vehicle and detects an odor in the interior of the vehicle. The odor type determination unit determines the type of the odor detected by the odor sensor. The operation decision unit decides the operation of the vehicle based on the type of the odor determined by the odor type determination unit. The operation decision unit decides either a first operation of driving a power window of a host vehicle to deodorize the odor of the interior or a second operation of driving a traveling system actuator that makes the host vehicle travel to direct the host vehicle to an external cleaning center, for example, based on the type of the odor.

Abstract: An in-vehicle device includes a camera, a passenger detector, a goods detector, an association unit, and an in-vehicle controller. The camera images the inside of a vehicle. The passenger detector detects the passenger inside the vehicle based on an image captured by the camera. The goods detector detects the goods inside the vehicle based on the image captured by the camera. The association unit generates association information. The association information is obtained by associating specific goods detected by the goods detector with a specific passenger detected by the passenger detector based on the goods detected by the goods detector and the passenger detected by the passenger detector. The in-vehicle controller performs predetermined control based on the association information generated by the association unit.

Abstract: A passenger support system includes a speaker, cameras, a vibrator, a seat switch, and a control device. The control device issues destination approach information by the speaker before the vehicle arrives at the destination based on results from comparing the current location information of the vehicle with the destination information of passenger. After issuing the destination approach information, the control device identifies the seat position based on the images captured by the cameras and performs awakening action by the vibrator at the seat corresponding to the specified seat position. The control device stops the awakening action by the vibrator when a stop operation is received from the seat switch.

Abstract: A vehicle management system includes an imaging device provided in a shared vehicle to capture a plurality of passengers on the vehicle, a detection unit that detects that a user, who is one of the passengers, has performed a predetermined motion which is a motion registered in advance, based on a capturing result by the imaging device, and a controller that controls the vehicle based on a predetermined command, which is a command registered in advance as a command corresponding to the predetermined motion, when the predetermined motion is detected.

Abstract: A method for manufacturing a nitride semiconductor substrate includes: a preparation step of preparing a sapphire substrate; and a buffer layer forming step of forming an AlN buffer layer on the sapphire substrate, wherein the buffer layer forming step includes: a group III nitride semiconductor forming step of forming a precursor of an AlN buffer layer on the sapphire substrate; and an annealing step of annealing the sapphire substrate on which the precursor of the AlN buffer layer is formed in a gas-tight state in which a principal surface of the precursor of the AlN buffer layer is covered with a cover member (such as a sapphire substrate) for inhibiting a component of the group III nitride semiconductor from dissociating from the principal surface of the formed precursor of the AlN buffer layer.

Abstract: A method for manufacturing a nitride semiconductor substrate includes: a preparation step of preparing a sapphire substrate; and a buffer layer forming step of forming an AlN buffer layer on the sapphire substrate, wherein the buffer layer forming step includes: a group III nitride semiconductor forming step of forming a precursor of an AlN buffer layer on the sapphire substrate; and an annealing step of annealing the sapphire substrate on which the precursor of the AlN buffer layer is formed in a gas-tight state in which a principal surface of the precursor of the AlN buffer layer is covered with a cover member (such as a sapphire substrate) for inhibiting a component of the group III nitride semiconductor from dissociating from the principal surface of the formed precursor of the AlN buffer layer.

Abstract: A method for manufacturing a nitride semiconductor substrate includes: a preparation step of preparing a sapphire substrate (2); and a buffer layer forming step of forming an AlN buffer layer on the sapphire substrate, wherein the buffer layer forming step includes: a group III nitride semiconductor forming step of forming a precursor of an AlN buffer layer on the sapphire substrate; and an annealing step of annealing the sapphire substrate on which the precursor of the AIN buffer layer is formed in a gas-tight state in which a principal surface of the precursor of the AlN buffer layer is covered with a cover member (such as a sapphire substrate) for inhibiting a component of the group III nitride semiconductor from dissociating from the principal surface of the formed precursor of the AlN buffer layer.

Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer.

Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.

Abstract: A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.

Abstract: A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.

Abstract: A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).

Abstract: A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).