Abstract: Provided is a polyurethane-based decorative film that combines multiple functions such as coloring and paint protection in a single product. Solution Means A decorative film according to an embodiment includes: a transparent top layer containing a transparent thermoplastic polyurethane elastomer film; and a colored acrylic pressure-sensitive adhesive layer. The decorative film has a tensile strength at 2% strain of 20 N/25 mm or less and an elongation of 150% or greater.

Abstract: A decorative film including a transparent surface layer, a colored polyurethane layer, and an adhesive layer, wherein the colored polyurethane layer includes a water-based polyether-based polyurethane and a pigment, and the transparent surface layer and the colored polyurethane layer are disposed adjacent to each other. The polyurethane-based decorative film is excellent in strength, shape followability, weather resistance, and dimensional stability and can be colored in various colors.

Abstract: A decorative film of an embodiment includes a transparent surface layer including polycarbonate-based polyurethane, a transparent ink-receiving layer including polyether-based polyurethane, a printed layer disposed on the transparent ink-receiving layer, and a pressure-sensitive adhesive layer in this order.

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

Abstract: A transparent solvent-based acrylic pressure-sensitive adhesive agent is described. Such agent contains: an adhesive (meth)acrylic polymer having a weight average molecular weight of 350000 or less; a high Tg (meth)acrylic polymer having a glass transition temperature of 40° C. or higher; a covalent bonding crosslinking agent that can form a covalent bond with the adhesive (meth)acrylic polymer; and at least one type of non-covalent bonding crosslinking agent selected from the group consisting of a benzotriazole compound, a piperidyl compound having at least two piperidyl groups, and an aluminum chelate compounds. Such solvent-based adhesive agent may exhibit a high constant load shear peeling force and maintain good appearance for an adhesive article to which it has been applied.

Abstract: Adhesive sheets that can adhere to both a smooth surface and a rough surface with sufficient adhesive force and that exhibits smooth visual appearance after adhesion regardless of a surface to be applied are described. In particular, adhesive sheets including a rigid sheet having a thickness of 80 ?m or greater and 2 mm or less; and a first pressure-sensitive adhesive layer disposed on one surface of the rigid sheet, the first pressure-sensitive adhesive layer having a thickness of 40 ?m or greater and 1.2 mm or less and including a microstructured surface including irregularities are described.

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

Abstract: A decorative film for a vehicle interior of one embodiment includes a biaxially stretched polyethylene terephthalate film layer and a colored adhesive layer, in which the colored adhesive layer contains a carboxy group-containing (meth)acrylic polymer, an amino group-containing (meth)acrylic polymer, and a colorant, a pencil hardness on a side of the biaxially stretched polyethylene terephthalate film layer of the decorative film is B or greater, a tensile strength at 2% elongation of the decorative film is 50 N/25 mm or more, an elongation of the decorative film is 60% or greater, and a total calorific value for 20 minutes after the start of heating measured in accordance with an ISO 5660-1 cone calorie meter heat resistance test is 8 MJ/m2 or less.

Abstract: According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 ?m or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 ?m or more.

Abstract: An article with a film adhered includes a film layer, a glass particle-containing layer, and an adherend in this order to facilitate high flame retardance. A laminate used to produce such article.

Abstract: The present disclosure provides a positive electrode which includes a positive electrode current collector and a positive electrode mixture layer, wherein the positive electrode mixture layer contains sulfur and/or a sulfur compound, a ceramic material that is oxidized and reduced in a potential range of 1.0V (vs. Li/Li+) to 3.0V (vs. Li/Li+), a binder, and a proportion of the sulfur and/or the sulfur compound in the positive electrode mixture layer is 40% by mass to 80% by mass.

Abstract: A semiconductor device includes a semiconductor element and a first terminal electrically connected to the semiconductor element. The first terminal includes a first portion at least a portion of which extends in a first direction and a second portion extending in the first direction. The second portion overlaps with the first portion as viewed in a second direction orthogonal to the first direction. The first terminal may include a third portion connecting the first portion and the second portion. The third portion may protrude beyond the first portion and the second portion as viewed in the first direction. The second section may be spaced apart from the first section.

Abstract: A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.

Abstract: An image capturing apparatus comprises an image capture device configured to capture an object image, a rotation device capable of rotating the image capture device, a first calculation unit configured to calculate a first rotation amount of the rotation unit for correcting image blur based on shaking of the image capturing apparatus, a second calculation unit configured to calculate a second rotation amount for searching for an object from an image captured by the image capture unit, and a stopping unit configured to stop the rotation unit in a case where the first rotation amount and the second rotation amount are both less than threshold values respectively set for the first rotation amount and the second rotation amount.

Abstract: According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 ?m or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 ?m or more.

Abstract: A method for producing a semiconductor power device, includes forming a gate trench from a surface of a semiconductor layer toward an inside thereof. A first insulation film is formed on an inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

Abstract: A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

Abstract: A construction member of one embodiment of the present disclosure includes a decorative film and a pre-mask: that is laminated to the decorative film and removed alter application of the decorative film is described. The decorative film includes: a transparent resin film having, an embossed first surface and a second surface opposite the first surface; a printed layer disposed on the second surface of the transparent resin: film; and a colored adhesive layer disposed on or above the printed layer. The pre-mask includes: a support film having a first surface and a second, surface opposite: the first surface; and a pressure-sensitive adhesive layer that has an uneven surface and: is disposed on the first, surface of the support film. The first surface of the transparent resin film of the decorative film and the uneven surface of the pressure-sensitive adhesive layer of the pre-mask face each other.

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the leadframe, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.