Patents by Inventor Hidetoshi Fujimoto

Hidetoshi Fujimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5740192
    Abstract: A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
    Type: Grant
    Filed: December 17, 1996
    Date of Patent: April 14, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ako Hatano, Yasuo Ohba, Hidetoshi Fujimoto, Kazuhiko Itaya, Johji Nishio
  • Patent number: 5693963
    Abstract: A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: December 2, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hidetoshi Fujimoto, Koichi Nitta, Masayuki Ishikawa, Hideto Sugawara, Yoshihiro Kokubun, Masahiro Yamamoto
  • Patent number: 5281831
    Abstract: AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.
    Type: Grant
    Filed: October 30, 1991
    Date of Patent: January 25, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Uemoto, Atsushi Kamata, Hidetoshi Fujimoto, Hiroshi Mitsuhashi
  • Patent number: 4812980
    Abstract: In a map display system, map-forming data necessary for display of a display area and character data representing display areas are stored in a map data memory. A display area commander reads map-forming data indicating a specified display area out of the map data memory, and produces a display area instruction. A display character commander selects character data for a given point of the specified display area designated by the display area designation commander, and produces a display character instruction. On the basis of the display area instruction from the display area commander and the display character instruction from the display character commander, a map of the specified display area and characters in the specified display area are displayed on a display.
    Type: Grant
    Filed: May 15, 1986
    Date of Patent: March 14, 1989
    Assignee: Nippondenso Co., Ltd.
    Inventors: Takeshi Yamada, Hidetoshi Fujimoto, Kenzo Ito, Kazunori Hanabusa
  • Patent number: D376793
    Type: Grant
    Filed: January 4, 1996
    Date of Patent: December 24, 1996
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Keiichiro Satoh, Hidetoshi Fujimoto
  • Patent number: D386490
    Type: Grant
    Filed: August 23, 1996
    Date of Patent: November 18, 1997
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Hidetoshi Fujimoto