Abstract: A substrate for biochips, which does not induce autofluorescence, which can immobilize a biologically relevant substance(s) easily, which can prevent the undesirable spread of a liquid spot which is added dropwise on the biochips when using the biochips, in which the adhesion between a carbon-containing layer and an aluminum material is high, and which can be produced at lower cost than the known substrate for biochips; a method for producing the substrate; and a biochip including the substrate are disclosed. The substrate for biochips comprises a carbon-coated aluminum material, wherein the carbon-coated aluminum material comprises an aluminum material and a carbon-containing layer formed on at least one surface of the aluminum material, and further comprises an interposing layer which is formed between the aluminum material and the carbon-containing layer, and which interposing layer contains aluminum element and carbon element.

Abstract: The present invention provides a method for preventing the reduction of a desired polypeptide during purification in order to purify the polypeptide in high yield from a culture solution which contains recombinant host cells and the polypeptide.

Abstract: An aluminum material, a dielectric layer and an interposing layer formed in at least one part of a region of the surface of the aluminum material between the aluminum material and the dielectric layer and includes aluminum and carbon, wherein the dielectric layer includes dielectric particles including a valve metal, and an organic substance layer formed on at least one part of a surface of the dielectric particle.

Abstract: An aluminum material, a dielectric layer and an interposing layer formed in at least one part of a region of the surface of the aluminum material between the aluminum material and the dielectric layer and includes aluminum and carbon, wherein the dielectric layer includes dielectric particles including a valve metal, and an organic substance layer formed on at least one part of a surface of the dielectric particle.

Abstract: A substrate for biochips, which does not induce autofluorescence, which can immobilize a biologically relevant substance(s) easily, which can prevent the undesirable spread of a liquid spot which is added dropwise on the biochips when using the biochips, in which the adhesion between a carbon-containing layer and an aluminum material is high, and which can be produced at lower cost than the known substrate for biochips; a method for producing the substrate; and a biochip including the substrate are disclosed. The substrate for biochips comprises a carbon-coated aluminum material, wherein the carbon-coated aluminum material comprises an aluminum material and a carbon-containing layer formed on at least one surface of the aluminum material, and further comprises an interposing layer which is formed between the aluminum material and the carbon-containing layer, and which interposing layer contains aluminum element and carbon element.

Abstract: A hydrogen storage alloy is provided which has an extremely low Co content, and can maintain the drain (power) performance (especially pulse discharge characteristics), activity (degree of activity), and life performance at high levels. The hydrogen storage alloy is manufactured by weighing and mixing every material for the hydrogen storage alloy so as to provide an alloy composition represented by the general formula MmNiaMnbAlcCod or MmNiaMnbAlcCodFee, and controlling the manufacturing method and manufacturing conditions so that both the a-axis length and the c-axis length of the crystal lattice are in a predetermined range. Although it is sufficient if the a-axis length of the crystal lattice is 499 pm or more and the c-axis length is 405 pm or more, by further specifying the a-axis length and c-axis length depending on the values of ABx, a hydrogen storage alloy having high durability can be provided.

Abstract: Provided are an electrically conductive layer coated aluminum material having properties which can withstand long term use; and a method for manufacturing the electrically conductive layer coated aluminum material. The electrically conductive layer coated aluminum material includes: an aluminum material (1); a first electrically conductive layer (2); an interposing layer (3); and a second electrically conductive layer (4). The first electrically conductive layer (2) is formed on a surface of the aluminum material (1) and includes an organic substance having electrical conductivity. The interposing layer (3) is formed between the aluminum material (1) and the first electrically conductive layer (2) and includes a carbide of aluminum. The second electrically conductive layer (4) is formed on a surface of the first electrically conductive layer (2) and includes carbon-containing particles (41).

Abstract: Provided are an electrode structure which is excellent in adhesiveness between an aluminum material as a base material and a dielectric layer and adhesiveness between the dielectric layers and allows a higher capacitance than the conventional one to be obtained, even when a thickness of the dielectric layer is thick; a method for manufacturing the above-mentioned electrode structure; and a capacitor and a battery, each of which includes the above-mentioned electrode structure. An electrode structure comprises: an aluminum material; a dielectric layer formed on a surface of the aluminum material; and an interposing layer formed in at least one part of a region of the surface of the aluminum material between the aluminum material and the dielectric layer and including aluminum and carbon, the dielectric layer includes dielectric particles including valve metal, and an organic substance layer is formed on at least one part of a surface of the dielectric particle.

Abstract: Provided are an electrode structure capable of suppressing a leakage current, having a high capacitance, allowing an electrical short circuit caused through contact with an electrolyte to be suppressed, and operable to be applied as an anode of a capacitor; a method for manufacturing the electrode structure; and a capacitor including the electrode structure. The method for manufacturing the electrode structure includes: a covering layer formation step of forming on a surface of an aluminum material a covering layer of a dielectric precursor including valve metal; and a reduction heating step of heating in a reducing atmosphere including no carbon the aluminum material having the covering layer formed thereon.

Abstract: In a 2-shunt system, accurate sensorless vector control can be realized without increasing shunt resistors. There is disclosed an inverter device including an inverter main circuit obtained by connecting, in a three-phase bridge-like manner, three arms formed by coupling, in series with a direct-current power source, two switching elements which perform mutually opposite on/off operations, to apply three-phase pseudo alternating-current voltages of a three-phase PWM system to an electric motor; shunt resistors connected to the direct-current power source in series with at least two of the three arms of the inverter main circuit; and a controller for detecting currents flowing through the shunt resistors in a predetermined cycle to control the on/off operations of the switching elements of the inverter main circuit based on the detected currents.

Abstract: Provided are an electrode structure which is excellent in adhesiveness between an aluminum material as a base material and a dielectric layer and adhesiveness between the dielectric layers and allows a higher capacitance than the conventional one to be obtained, even when a thickness of the dielectric layer is thick; a method for manufacturing the above-mentioned electrode structure; and a capacitor and a battery, each of which includes the above-mentioned electrode structure. An electrode structure comprises: an aluminum material; a dielectric layer formed on a surface of the aluminum material; and an interposing layer formed in at least one part of a region of the surface of the aluminum material between the aluminum material and the dielectric layer and including aluminum and carbon, the dielectric layer includes dielectric particles including valve metal, and an organic substance layer is formed on at least one part of a surface of the dielectric particle.

Abstract: Provided are an electrically conductive substance coated aluminum material in which an electrically conductive substance ensuring electrical conductivity of a surface is not exfoliated from an aluminum material due to moisture even in a case where the electrically conductive substance coated aluminum material is used under a high humidity condition and which can be favorably used as a material for a current collector and an electrode; and a method for manufacturing the electrically conductive substance coated aluminum material.

Abstract: In a semiconductor package, at least two of connection pads are formed into different-shape pads which are different in planar shape from other connection pads, and one different-shape pad and another different-shape pad are disposed in a manner that, when the position of the one different-shape pad is rotated about the center point of the semiconductor package, the position does not coincide with the disposition position of the other different-shape pad.

Abstract: Provided are a carbon-coated aluminum material capable of improving properties of adhesion between a carbon-containing layer and an aluminum material and properties of mutual adhesion among carbon-containing particles included in the carbon-containing layer; and a method for manufacturing the carbon-coated aluminum material. The carbon-coated aluminum material comprises: aluminum foil (1); a carbon-containing layer (2) formed on a surface of the aluminum foil (1); and an interposing layer(s) (3) formed between the aluminum foil (1) and the carbon-containing layer (2) and on at least one region of the surface of the aluminum foil (1), the interposing layer (3) including a carbide of aluminum. The carbon-containing layer (2) includes a plurality of the carbon-containing particles (22) and an organic layer (23) is formed on a surface of each of the carbon-containing particles (22).

Abstract: In a 2-shunt system, accurate sensorless vector control can be realized without increasing shunt resistors. There is disclosed an inverter device including an inverter main circuit obtained by connecting, in a three-phase bridge-like manner, three arms formed by coupling, in series with a direct-current power source, two switching elements which perform mutually opposite on/off operations, to apply three-phase pseudo alternating-current voltages of a three-phase PWM system to an electric motor; shunt resistors connected to the direct-current power source in series with at least two of the three arms of the inverter main circuit; and a controller for detecting currents flowing through the shunt resistors in a predetermined cycle to control the on/off operations of the switching elements of the inverter main circuit based on the detected currents.

Abstract: In a semiconductor package, at least two of connection pads are formed into different-shape pads which are different in planar shape from other connection pads, and one different-shape pad and another different-shape pad are disposed in a manner that, when the position of the one different-shape pad is rotated about the center point of the semiconductor package, the position does not coincide with the disposition position of the other different-shape pad.

Abstract: The invention provides a non-aqueous electrolyte secondary cell that has high capacity and excels in cycle characteristics. The non-aqueous electrolyte secondary cell functions stably at a high potential of from 4.4 to 4.6 V with respect to lithium and inhibits the decomposition of the electrolytic solution at high potential. This is accomplished as follows. The non-aqueous electrolyte secondary cell has a positive electrode having a positive electrode active material; a negative electrode having a negative electrode active material; and a non-aqueous electrolyte having a non-aqueous solvent and electrolytic salt. The positive electrode active material has: lithium cobalt compound oxide having added therein at least zirconium and magnesium; and lithium-nickel-manganese compound oxide having a layered structure. The positive electrode active material has a potential of from 4.4 to 4.6 V with respect to lithium. The non-aqueous solvent contains diethyl carbonate of 10 vol. % or higher at 25° C.

Abstract: In a method of manufacturing a semiconductor device, the method includes: a) preparing one type of an ASIC chip; b) preparing memory chips which are different from each other; c) preparing a common circuit substrate; d) preparing a pedestal terminal chip including wiring patterns having memory chip terminals and external connection terminals; e) mounting the ASIC chip on the common circuit substrate by flip-chip bonding; f) securing the pedestal terminal chip on the ASIC chip; g) mounting one of the memory chips on the pedestal terminal chip; h) electrically connecting terminals on the one of the memory chips to the memory chip terminals using a first wire; and i) electrically connecting the external connection terminals to terminals on the common circuit substrate using a second wire.

Abstract: A hydrogen storage alloy is provided which, when used in a battery, has high drain (power) performance and charge acceptance that are excellent, and in addition, cracks are few, and cycle life performance are excellent, to be used in large batteries, in particular for electric vehicles, hybrid electric vehicles, high-power use, and the like. The hydrogen storage alloy is a hydrogen storage alloy having phase conversion accompanying the variation of hydrogen storage capacity (H/M) and is in a single phase or in a state close to a single phase when the above-mentioned hydrogen storage capacity (H/M) is in a range of 0.3 to 0.7 or 0.4 to 0.6.

Abstract: A hydrogen storage alloy is provided which has an extremely low Co content, and can maintain the drain (power) performance (especially pulse discharge characteristics), activity (degree of activity), and life performance at high levels. The hydrogen storage alloy is manufactured by weighing and mixing every material for the hydrogen storage alloy so as to provide an alloy composition represented by the general formula MmNiaMnbAlcCod or MmNiaMnbAlcCodFee, and controlling the manufacturing method and manufacturing conditions so that both the a-axis length and the c-axis length of the crystal lattice are in a predetermined range. Although it is sufficient if the a-axis length of the crystal lattice is 499 pm or more and the c-axis length is 405 pm or more, by further specifying the a-axis length and c-axis length depending on the values of ABx, a hydrogen storage alloy having high durability can be provided.