Abstract: The invention provides a non-aqueous electrolyte secondary cell that has high capacity and excels in cycle characteristics. The non-aqueous electrolyte secondary cell functions stably at a high potential of from 4.4 to 4.6 V with respect to lithium and inhibits the decomposition of the electrolytic solution at high potential. This is accomplished as follows. The non-aqueous electrolyte secondary cell has a positive electrode having a positive electrode active material; a negative electrode having a negative electrode active material; and a non-aqueous electrolyte having a non-aqueous solvent and electrolytic salt. The positive electrode active material has: lithium cobalt compound oxide having added therein at least zirconium and magnesium; and lithium-nickel-manganese compound oxide having a layered structure. The positive electrode active material has a potential of from 4.4 to 4.6 V with respect to lithium. The non-aqueous solvent contains diethyl carbonate of 10 vol. % or higher at 25° C.

Abstract: A hydrogen storage alloy is provided which, when used in a battery, has high drain (power) performance and charge acceptance that are excellent, and in addition, cracks are few, and cycle life performance are excellent, to be used in large batteries, in particular for electric vehicles, hybrid electric vehicles, high-power use, and the like. The hydrogen storage alloy is a hydrogen storage alloy having phase conversion accompanying the variation of hydrogen storage capacity (H/M) and is in a single phase or in a state close to a single phase when the above-mentioned hydrogen storage capacity (H/M) is in a range of 0.3 to 0.7 or 0.4 to 0.6.

Abstract: A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

Abstract: A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

Abstract: There can be provided a positive electrode active material for a secondary battery which is excellent in the charging and discharging cycle characteristics so that it retains high battery capacity that is comparable to the hitherto known LiNiO2 even by increasing the number of cycle, which has an improved cycle property (stability) at high temperature and which is a complex oxide represented by the general formula (I) LiyNi1−xCox1Mx2O2  (I) (wherein M represents at least one element selected from the group consisting of Al, Fe, Mn and B, y represents 0.9≦y≦1.3, x represents 0<x≦0.5, x1 represents 0<x1<0.5, x1+x2 x, when M is at least one element of Al, Fe and Mn, x2 represents 0<x2≦0.3, when M is B, x2 is 0<x2≦0.1, when M is the combination of B and at least one element of Al, Fe and Mn, x2 represents 0<x2<0.3 but the ratio occupied by B therein is in a range of from 0 to 0.1).

Abstract: A process for preparing a spinel lithium manganese complex oxide having the general formula LixMn2−yAlyO4 (wherein 0.9≦x≦1.1, and 0.002≦y≦0.5) the process comprising the steps of reacting a manganese complex hydroxide represented by the general formula (IIa) Mn2+(1−a)Al3+a(OH)[2+a−nz](An−)2·mH2O (wherein An− is an anion having a valence n, 0.001≦a≦0.25, 0.03<z<0.3 and 0<m) with a water-soluble lithium compound in a molar ratio of Li/(Mn+Al) of 0.45˜0.55 in an aqueous medium to obtain a slurry, spray- or freeze-drying the obtained slurry, and heating the resultant dry material at a temperature of 600˜900° C.

Abstract: A method of making a semiconductor device including: a ceramic base board formed of AlN; a CPU chip and a CMU chip which are flip-chip bonded on a circuit board which includes the ceramic base board; SRAM chips which are die-bonded to the lower major surface of the circuit board; first heat conductive blocks adhesively attached to the CPU chip and the CMU chip; second heat conductive blocks adhesively attached to the upper major surface of the AlN ceramic base board; a resin package; and a heat sink which, adhesively attached on the upper major surface of the resin package, is in close contact with the first heat conductive blocks and the second heat conductive blocks. The heat generated by the CPU chip and the CMU chip is transferred to the heat sink via the first heat conductive blocks and is radiated from the heat sink.

Abstract: A semiconductor device including: a ceramic base board formed of A1N; a CPU chip and a CMU chip which are flip-chip bonded on a circuit board which includes the ceramic base board; SRAM chips which are die-bonded to the lower major surface of the circuit board; first heat conductive blocks adhesively attached to the CPU chip and the CMU chip; second heat conductive blocks adhesively attached to the upper major surface of the A1N ceramic base board; a resin package; and a heat sink which, adhesively attached on the upper major surface of the resin package, is in close contact with the first heat conductive blocks and the second heat conductive blocks. The heat generated by the CPU chip and the CMU chip is transferred to the heat sink via the first heat conductive blocks and is radiated from the heat sink. The heat generated by the SRAM chips is transferred to the heat sink via the A1N ceramic base board and the second heat conductive blocks and is radiated from the heat sink.

Abstract: A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide.

Abstract: When a portable terminal apparatus such as a radiotelephone malfumctions, such status can be detected, and it is diagnosed whether the portable terminal apparatus is out of order. Thus, the portable terminal apparatus can be maintained efficiently. The portable terminal apparatus includes a reception state detecting unit for analyzing a reception state of a receiving unit, and a display unit for displaying a message on the basis of an analyzed state at the reception state detecting unit, thereby when a failure of connection or maintenance of the communication network is detected, a predetermined message is displayed on the display unit. Further, the portable terminal apparatus includes a memory for storing log data concerning communication with a base station when the control circuitry detects a failure of communication.

Abstract: Stable facsimile communications and reduced deterioration in image quality are achieved, when standard facsimile apparatuses communicate using a communication network composed a subnetwork with relatively good transmission quality such as a wire system and a subnetwork with relatively bad transmission quality such a mobile system subnetwork, both subnetworks being interspersed between the facsimile apparatuses, by inserting a pair of FAX signal converting apparatuses into the communication channel between the facsimile apparatuses for error control responsive to the quality of the channel in use.

Abstract: Al-based alloys comprising predetermined amounts of Cr and Ti with the balance being Al and inevitable impurities. The alloys are made by powder metallurgy by which the additive elements are finely dispersed in an Al matrix. The alloys may further comprise up to 5 wt. %. of Fe.

Abstract: In a telephone apparatus comprising a locking arrangement for holding a handset on a base unit, protrusion members are provided on the base unit so as to confront and outer inner sides of the receiver part of the handset. When the handset is mounted on the base unit, one of the protrusion members being movable, engagement parts provided on the outer and the inner sides of the receiver part engage the protrusion members. The movable protrusion member is resiliently held and retracted by abutment and sliding with the receiver part as the handset is lifted off the base unit and as the handset is mounted onto the base unit.