Abstract: A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers of which a main component is ceramic and each of three or more of internal electrode layers are alternately stacked. The three or more of internal electrode layers include Ni and Sn. An internal electrode layer having a larger Sn concentration is closer to an outermost edge in a stacking direction than an internal electrode layer having a smaller Sn concentration and being located on a center side of the stacking direction, in a relationship of at least two of the three or more of internal electrode layers.

Abstract: A manufacturing method of a multilayer ceramic electronic device includes: forming each of stack units by forming each of internal electrode patterns on each of dielectric green sheets, the each of internal electrode patterns including Ni, Sn and Au; forming a multilayer structure by stacking the each of stack units; and firing the multilayer structure, whereby each internal electrode layer is formed from the each of internal electrode patterns and each dielectric layer is formed from the each of the dielectric green sheets wherein, in the each internal electrode layer, an Au concentration near each interface between the each internal electrode layer and the each dielectric layer is larger than an Au concentration in each center portion in a thickness direction.

Abstract: A ceramic electronic device includes a multilayer chip in which a dielectric layer and an internal electrode layer are alternately stacked. Concentration peaks of two or more types of metals different from a main component metal of the internal electrode layer exist at different positions in a stacking direction of the dielectric layer and the internal electrode layer, between the dielectric layer and the internal electrode layer.

Abstract: A ceramic electronic device includes a multilayer chip in which a plurality of dielectric layers and a plurality of internal electrode layers are stacked. The plurality of internal electrode layers include Au. Each of the plurality of internal electrode layers includes an Au-containing layer of which an Au concentration with respect to all detected elements is 5 at % or more, on an interface between the each of the plurality of internal electrode layers and a dielectric layer next to the each of the plurality of internal electrode layers. A relationship of C?500×t/T is satisfied when a thickness of the each of the plurality of internal electrode layers is T nm, a thickness of the Au-containing layer is t nm, and an Au concentration with respect to a total of Ni and Au in a whole of the each of the plurality of internal electrode layers is C at %.

Abstract: The medium transporting device is arranged so as to face the feeder for feeding the medium in the transporting direction and the surface of the medium transported in the transporting direction, and detects the motion of the medium in the two-dimensional coordinate system including the first axis and the second axis. The two-dimensional sensor is provided in a state in which the first axis and the second axis are inclined with respect to the transporting direction.

Abstract: A manufacturing method of a multilayer ceramic electronic device includes: forming each of stack units by forming each of internal electrode patterns on each of dielectric green sheets, the each of internal electrode patterns including Ni, Sn and Au; forming a multilayer structure by stacking the each of stack units; and firing the multilayer structure, whereby each internal electrode layer is formed from the each of internal electrode patterns and each dielectric layer is formed from the each of the dielectric green sheets wherein, in the each internal electrode layer, an Au concentration near each interface between the each internal electrode layer and the each dielectric layer is larger than an Au concentration in each center portion in a thickness direction.

Abstract: A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked. There are a concentration peak of a first metal and a concentration peak of a second metal at different positions in a stacking direction of the plurality of internal electrode layers and the plurality of dielectric layers between a dielectric layer and an internal electrode layer next to the dielectric layer, the first metal and the second metal being different from a main component metal of the plurality of internal electrode layers. The second metal is easier to ionize than the first metal. The concentration peak of the second metal is closer to the dielectric layer than the concentration peak of the first metal.

Abstract: A ceramic electronic device includes a multilayer chip in which dielectric layers and internal electrode layers are alternately stacked. The internal electrode layers include a main component element and a sub-element. The dielectric layers include a plurality of crystal grains. A segregation portion, in which the sub-element is segregated in shell portions and a grain boundary of the plurality of crystal grains and a sub-element concentration is 1.5 times or more as that in an entire of each of the dielectric layers, is formed. near an interface between each of the internal electrode layers and each of the dielectric layers, each of the internal electrode layers has a high concentration layer, in which the sub-element concentration is 1.5 times or more as that in an entire of each of the internal electrode layers.

Abstract: A ceramic electronic device includes a multilayer chip in which a plurality of dielectric layers of which a main component is ceramic and a plurality of internal electrode layers are stacked. The plurality of internal electrode layers include Ni, Sn and Au.

Abstract: A ceramic electronic device includes a multilayer body in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked. In at least a part of a cover layer and side margins, a concentration of a specific metal of at least one of Ag, As, Au, Bi, Co, Cr, Cu, Fe, Ge, In, Ir, Mo, Os, Pd, Pt, Re, Rh, Ru, Se, Sn, Te, W or Zn is lower on an outer side than on a side of the multilayer body.

Abstract: A ceramic electronic device includes a multilayer chip in which a dielectric layer and an internal electrode layer are alternately stacked. Concentration peaks of two or more types of metals different from a main component metal of the internal electrode layer exist at different positions in a stacking direction of the dielectric layer and the internal electrode layer, between the dielectric layer and the internal electrode layer.

Abstract: A ceramic electronic device includes a multilayer chip in which a plurality of dielectric layers and a plurality of internal electrode layers are stacked. The plurality of internal electrode layers include Au. Each of the plurality of internal electrode layers includes an Au-containing layer of which an Au concentration with respect to all detected elements is 5 at % or more, on an interface between the each of the plurality of internal electrode layers and a dielectric layer next to the each of the plurality of internal electrode layers. A relationship of C?500×t/T is satisfied when a thickness of the each of the plurality of internal electrode layers is T nm, a thickness of the Au-containing layer is t nm, and an Au concentration with respect to a total of Ni and Au in a whole of the each of the plurality of internal electrode layers is C at %.

Abstract: A capacitor that can make a failure mode into an open mode even when a short circuit caused by insulation breakdown occurs in a dielectric layer is provided. The capacitor includes: a substrate; an MIM structure disposed on the Substrate, the MIM structure including a dielectric layer, a bottom electrode layer disposed on one side of the dielectric layer and composed of a first conductive material, and a top electrode layer disposed on the other side of the dielectric layer; a first external electrode disposed on the substrate; a second external electrode disposed on the substrate; and a connection conductor connecting between the bottom electrode layer and the first external electrode, the connection conductor including a first contact portion contacting the substrate.

Abstract: A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers of which a main component is ceramic and each of three or more of internal electrode layers are alternately stacked. The three or more of internal electrode layers include Ni and Sn. An internal electrode layer having a larger Sn concentration is closer to an outermost edge in a stacking direction than an internal electrode layer having a smaller Sn concentration and being located on a center side of the stacking direction, in a relationship of at least two of the three or more of internal electrode layers.

Abstract: A control portion performs a predetermined detection process on a first image from a first reading portion and a second image from a second reading portion. When the detection process on the each image is successful, the control portion performs, based on a value of an image processing variable specified from a detection result, predetermined image processing on the each image, When the detection process on the image of one side fails, a value of an image processing variable for the image of one side is specified based on a value of an image processing variable specified from the detection result for the image of the other side for which detection is successful. Based on the specified value of the image processing variable, image processing is performed on the image of one side.

Abstract: A ceramic electronic device includes a multilayer chip in which a plurality of dielectric layers of which a main component is ceramic and a plurality of internal electrode layers are stacked. The plurality of internal electrode layers include Ni, Sn and Au.

Abstract: The medium transporting device is arranged so as to face the feeder for feeding the medium in the transporting direction and the surface of the medium transported in the transporting direction, and detects the motion of the medium in the two-dimensional coordinate system including the first axis and the second axis. The two-dimensional sensor is provided in a state in which the first axis and the second axis are inclined with respect to the transporting direction.

Abstract: A medium transporting apparatus includes a feeding roller that rotates to transport a medium along a transportation path, an electrode installed downstream of the feeding roller on the transportation path and having conductivity, and an electric charge detecting circuit that outputs a signal having a magnitude corresponding to an amount of an electric charge, which moves from the medium to the electrode after the medium being transported along the transportation path comes into contact with the electrode.

Abstract: A trench capacitor according to one embodiment of the present invention includes a base member with an upper surface having a plurality of trenches provided therein and an MIM structure provided on the base member so as to be embedded in the plurality of trenches. In the embodiment, the plurality of trenches include a first trench and a second trench adjacent to the first trench in a first direction orthogonal to a depth direction of the plurality of trenches. The base member includes a first wall separating the first trench from the second trench. The first wall includes a first portion having an acute angle at a distal end thereof in a section including the first direction and the depth direction.

Abstract: There is provided a medium transporting device including: a medium placement section on which a medium is placed, a feeding roller feeding a medium from the medium placement section, a motion detection sensor detects a motion of a medium, and a controller that stops feeding of a medium based on a detection value received from the motion detection sensor, in which the motion detection sensor is a two-dimensional sensor including a light emitting section and a light receiving section and detecting a motion of a medium, the medium placement section is provided with a placement detector that acquires information relating to a presence/absence of a medium on the medium placement section, and the controller sets a state of the light emitting section to a non-light emitting state when detection information of the placement detector indicates that a medium is absent on the medium placement section.