Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.

Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.

Abstract: A powder material which can electrochemically store and release lithium ions rapidly in a large amount is provided. In addition, an electrode structure for an energy storage device which can provide a high energy density and a high power density and has a long life, and an energy storage device using the electrode structure are provided. In a powder material which can electrochemically store and release lithium ions, the surface of particles of one of silicon metal and tin metal and an alloy of any thereof is coated by an oxide including a transition metal element selected from the group consisting of W, Ti, Mo, Nb, and V as a main component. The electrode structure includes the powder material. The battery device includes a negative electrode having the electrode structure, a lithium ion conductor, and a positive electrode, and utilizes an oxidation reaction of lithium and a reduction reaction of lithium ion.

Abstract: A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Abstract: A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.

Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.

Abstract: A plating apparatus includes a plating vessel for holding a plating bath containing at least metal ions, a conveying device for conveying a long conductive substrate and immersing the long conductive substrate in the plating bath, a facing electrode disposed in the plating bath so as to face one surface of the conductive substrate, a voltage application device for performing plating on the one surface of the conductive substrate by applying a voltage between the conductive substrate and the facing electrode, and a film-deposition suppression device fixedly disposed in the plating vessel so that at least a portion of the film-deposition suppression means is close to shorter-direction edges of the conductive substrate. At least a portion of the film-deposition suppression device close to the shorter-direction edges of the conductive substrate is conductive.