Abstract: A nonlinear resistive coating material 20 in an embodiment includes: a matrix resin 22 made of an epoxy resin which is cured by adding a curing agent thereto; ZnO-containing particles 21 dispersedly contained in the matrix resin 22 and made of a sintered compact containing ZnO as a main component; and semiconductive surface-treated whiskers 10 dispersedly contained in the matrix resin 22 and made of ZnO subjected to titanate coupling surface modification treatment.

Abstract: A nonlinear resistive coating material 20 in an embodiment includes: a matrix resin 22 made of an epoxy resin which is cured by adding a curing agent thereto; ZnO-containing particles 21 dispersedly contained in the matrix resin 22 and made of a sintered compact containing ZnO as a main component; and semiconductive surface-treated whiskers 10 dispersedly contained in the matrix resin 22 and made of ZnO subjected to titanate coupling surface modification treatment.

Abstract: A current-voltage non-linear resistor (10) comprises a sintered body (20) of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 ?m; and the average grain size of the zinc oxide grains in the sintered body (20) is no more than 7.5 ?m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body (20) is no more than 15% of the average grain size of the zinc oxide grains.

Abstract: The present invention provides method of DLC film coating a plastic container by DLC film coating the container in an apparatus, where the apparatus comprises a container side electrode which forms one portion of a pressure-reducing chamber and a facing electrode, where the container side electrode is formed so that the average inner hole diameter (R2) of the inner wall surrounding a neck portion is smaller than the average inner hole diameter (R1) of the inner wall surrounding the body portion, and the average distance (d2) between the outer wall of the container and the inner wall of the container side electrode in a horizontal cross section with respect to the vertical direction of the container at the neck portion becomes longer than the average distance (d1) between the outer wall of the container and the inner wall of the container side electrode.

Abstract: A ZnO varistor powder can be obtained with high operating voltage and excellent current-voltage nonlinear resistance characteristics. In the ZnO varistor powder, the main ingredient is zinc oxide (ZnO); and at least bismuth (Bi), cobalt (Co), manganese (Mn), antimony (Sb), nickel (Ni), and aluminum (Al), calculated as Bi2O3, CO2O3, MnO, Sb2O3, NiO, and Al3+, are contained as accessory ingredients in amounts of 0.3 to 1.5 mol % Bi2O3, 0.3 to 2.0 mol % Co2O3, 0.3 to 3 mol % MnO, 0.5 to 4 mol % Sb2O3, 0.5 to 4 mol % NiO, and 0.0005 to 0.02 mol % Al3+. ZnO content is greater than or equal to 90 mol %; the bulk density is greater than or equal to 2.5 g/cc; the powder is a spherical powder in which the 50% particle diameter in the particle size distribution is 20 ?m to 120 ?m.

Abstract: The present invention provides a plastic container having a inner wall surface coated with DLC film which has same level of oxygen barrier property as prior art and can prevent a coloring of the DLC film formed on a neck portion of the container, manufacturing apparatus therefor and manufacturing method thereof.

Abstract: The present invention provides a plastic container or bottle having an inner wall surface coated with a DLC film which has the same level of oxygen barrier property as prior art DLC coated containers while at the same time preventing the coloration of the neck portion found in the containers of the prior art. The DLC film formed on the neck portion of the inventive bottle has a lower graphite mixing proportion than the DLC film formed on body portion, and the oxygen permeability of the container is less than or equal to 0.0050 ml/container (500 ml PET container)/day. The apparatus and the method of producing such a bottle are also described.

Abstract: A current-voltage non-linear resistor (10) comprises a sintered body (20) of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 ?m, and the average grain size of the zinc oxide grains in the sintered body (20) is no more than 7.5 ?m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body (20) is no more than 15% of the average grain size of the zinc oxide grains.

Abstract: A ZnO varistor powder can be obtained with high operating voltage and excellent current-voltage nonlinear resistance characteristics. In the ZnO varistor powder, the main ingredient is zinc oxide (ZnO); and at least bismuth (Bi), cobalt (Co), manganese (Mn), antimony (Sb), nickel (Ni), and aluminum (Al), calculated as Bi2O3, CO2O3, MnO, Sb2O3, NiO, and Al3+, are contained as accessory ingredients in amounts of 0.3 to 1.5 mol % Bi2O3, 0.3 to 2.0 mol % Co2O3, 0.3 to 3 mol % MnO, 0.5 to 4 mol % Sb2O3, 0.5 to 4 mol % NiO, and 0.0005 to 0.02 mol % Al3+. ZnO content is greater than or equal to 90 mol %; the bulk density is greater than or equal to 2.5 g/cc; the powder is a spherical powder in which the 50% particle diameter in the particle size distribution is 20 ?m to 120 ?m.

Abstract: A non-linear resistor comprises a sintered body having zinc oxide as a main component, a side-surface high resistance layer arranged at a side-surface of the sintered body, and an electrode arranged at upper and lower surfaces of the sintered body. The side-surface high resistance layer is formed of a specifically selected material. The end-to-end distance between an end portion of the electrode and a nonlinear resistor end portion including the side-surface high resistance layer falls within a range of 0 mm to the thickness of the side-surface high resistance layer+0.01 mm.

Abstract: The present invention provides a plastic container having a inner wall surface coated with DLC film which has same level of oxygen barrier property as prior art and can prevent a coloring of the DLC film formed on a neck portion of the container, manufacturing apparatus therefor and manufacturign method thereof.

Abstract: A non-linear resistor comprises a sintered body having zinc oxide as a main component, a side-surface high resistance layer arranged at a side-surface of the sintered body, and an electrode arranged at upper and lower surfaces of the sintered body. The side-surface high resistance layer is formed of a specifically selected material. The end-to-end distance between an end portion of the electrode and a nonlinear resistor end portion including the side-surface high resistance layer falls within a range of 0 mm to the thickness of the side-surface high resistance layer+0.01 mm.

Abstract: A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containing, as auxiliary components, Bi, Co, Mn, Sb, Ni and Al, and the contents of the auxiliary components are respectively expressed as Bi2O3, Co2O3, MnO, Sb2O3, NiO and Al3+, of Bi2O3: 0.3 to 2 mol %, Co2O3: 0.3 to 1.5 mol %, MnO: 0.4 to 6 mol %, Sb2O3: 0.8 to 7 mol %, NiO: 0.5 to 5 mol % and Al3+: 0.001 to 0.02 mol %; a Bi2O3 crystalline phase in the sintered body including an &agr;-Bi2O3 phase representing at least 80% of the total Bi2O3 phase.

Abstract: A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containing, as auxiliary components, Bi, Co, Mn, Sb, Ni and Al, and the contents of the auxiliary components are respectively expressed as Bi2O3, Co2O3, MnO, Sb2O3, NiO and Al3+, of Bi2O3: 0.3 to 2 mol %, Co2O3: 0.3 to 1.5 mol %, MnO: 0.4 to 6 mol %, Sb2O3: 0.8 to 7 mol %, NiO: 0.5 to 5 mol % and Al3+: 0.001 to 0.02 mol %; a Bi2O3 crystalline phase in the sintered body including an &agr;-Bi2O3 phase representing at least 80% of the total Bi2O3 phase.

Abstract: The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.

Abstract: The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.