Abstract: An absorbent article in which a longitudinal-direction compression groove is formed along a longitudinal direction of the absorbent article by a compression process performed from the top sheet side, width-direction compression grooves are formed along a width direction of the absorbent article by a compression process performed from the topsheet side, wherein the longitudinal-direction compression groove includes a high compression region, a medium compression region, and a low compression region and the width direction compression groove includes the high compression region and the medium compression region, and the low compression region is disposed over the longitudinal-direction compression groove in the width direction.

Abstract: An absorbent article that includes a first absorber. The first absorber is disposed over an excretion opening contact region in the absorbent article and a posterior region. In a width direction of the absorbent article, the first absorber is configured to be longer than a second absorber. The second absorber is not disposed in the excretion opening contact region but disposed in the posterior region. A liquid-penneable sheet is disposed farther inwardly of the skin contact surface side of the absorbent article than the second absorber over the excretion opening contact region and the posterior region. In the width direction, the liquid-penneable sheet is configured to be shorter than the first absorber.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.

Abstract: The invention provides an absorbent article that is small and that can be easily worn by a user and a method for producing the absorbent article. The absorbent article that is used in abutment against a user's body includes: an absorbent body for absorbing fluid; and an absorbent-article main body whose face on a side close to the user's body in use is joined to the absorbent body. The absorbent body has a longitudinal direction, a width direction, and a thickness direction. One end section of the absorbent body in the longitudinal direction is undetachably joined to the absorbent-article main body, and another end section of the absorbent body in the longitudinal direction is detachably joined to a portion inside an outer edge of the absorbent-article main body. The absorbent body has a non-joined section that is not joined to the absorbent-article main body, between the joined section on a side close to the other end section and the outer edge of the absorbent-article main body.

Abstract: An absorbent article includes a liquid-permeable topsheet, a liquid-impermeable backsheet, and an absorber provided in between the topsheet and the backsheet, such that a joint unit is formed in which at least the topsheet and the absorber are joined. The absorber comprises: a first region having a predetermined weight per unit area of an absorbent material configuring the absorber; and a second region having less weight per unit area of the absorbent material than the first region, the second region extends along the longitudinal direction of the absorbent article and is sandwiched between the first regions in the widthwise direction of the absorbent article, and the joint unit is formed in the second region.

Abstract: An absorbent article includes a front wing unit which is provided outside in a widthwise direction of the absorbent article more than an absorber, and extends to the outside in the widthwise direction of the absorber in an inside leg region which corresponds to an inside leg portion of a wearer; and a gather which is provided at each of edges of the absorber, which extends along a longitudinal direction of the absorbent article, and which prevents a bodily fluid of the wearer from leaking from the absorbent article. The front wing unit has a base part which is positioned at an innermost side in a widthwise direction of the absorbent article in the front wing unit; and the leakage gather extends to the outside in the widthwise direction of the absorbent article more than the base part as seen in plan view of the absorbent article.

Abstract: A nonvolatile semiconductor memory device according to an embodiment includes a semiconductor substrate, a memory cell transistor formed in a memory cell region, and a field-effect transistor formed in a peripheral circuit region. The memory cell transistor includes: a floating gate electrode; a first inter-electrode insulating film; and a control gate electrode. The field-effect transistor includes: a lower gate electrode; a second inter-electrode insulating film having an opening; and an upper gate electrode electrically connected to the lower gate electrode via the opening. The control gate electrode and the upper gate electrode are formed by a plurality of conductive films that are stacked. The control gate electrode and the upper gate electrode include a barrier film formed in one of interfaces between the stacked conductive films and configured to suppress diffusion of metal atoms. The control gate electrode and the upper gate electrode have a part that is silicided.

Abstract: An absorbent article includes an absorbent body that has a fluid-absorbent member for absorbing fluid, and has a longitudinal direction, a width direction, and a thickness direction. A main body section is overlapped with the absorbent body in the thickness direction. One end section in the longitudinal direction of the absorbent body is fixed to the main body section. The absorbent body has a portion that is closer to the main body section than the fluid-absorbent member in the thickness direction, and a portion that is closer to the human body than the fluid-absorbent member. The portion closer to the main body section, in another end section in the longitudinal direction of the absorbent body, is covered with a fluid-impermeable layer. The portion closer to the human body, in the other end section, has a portion in which the fluid-impermeable layer is not included.

Abstract: The invention includes an absorbent article 1 in which an undergarment 90 can be prevented from getting dirty with fluid that has been absorbed by an absorbent body 20, without a decrease in the amount of fluid that can be absorbed.

Abstract: An absorbent article has a top layer, a bottom layer, an absorbent core and a pair of leak-barrier walls. Each leak-barrier wall has a proximal wall section, a first elastic overhang section extending outward in a transverse direction from around the upper end of the proximal wall section, and a second elastic overhang section formed below the first overhang section so as to extend outward in the transverse direction from around the upper end of the proximal wall section. The second overhang section has a stiffness higher than that of the first overhang section.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.

Abstract: An absorbent article is provided that is likely to be in close contact with user's body.

Abstract: A method for manufacturing a semiconductor device has forming a first insulating film on a semiconductor substrate, forming an electrode layer on said first insulating film, etching said electrode layer, said first insulating film and said semiconductor substrate of a first predetermined region to form a trench, burying an element-isolating insulating film in said trench, forming a second insulating film on said element-isolating insulating film and above said electrode layer, etching said second insulating film, said electrode layer and said element-isolating insulating film of a second predetermined region to form a gate pattern and a dummy pattern, forming a third insulating film for covering said gate pattern and said dummy pattern, and planarizing said third insulating film using said second insulating film as a stopper.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.

Abstract: A NAND-type non-volatile semiconductor memory device has a semiconductor substrate, an element isolation insulating film which is formed on a surface of the semiconductor substrate spaced apart at a predetermined distance from each other, a first insulating film which is formed between the element isolation insulating films on the semiconductor substrate, a floating gate which is formed on the first insulating films, a second insulating gate which is formed on an end region of the floating gate, a control gate which is formed on the second insulating film, and a contact plug which is formed on a surface of the floating gate so that one end of the contact plug is electrically connected to the control gate.

Abstract: A manufacturing method of a semiconductor device disclosed herein, comprises: forming a first member to be patterned on a semiconductor substrate; forming a second member to be patterned on the first member; forming a third member to be patterned on the second member; patterning the third member to form a first line pattern and a first connecting portion in the third member, the first line pattern having a plurality of parallel linear patterns and the first connecting portion connecting the linear patterns on at least one end side of the linear patterns of the first line pattern; etching the second member with the third member as a mask to form a second line pattern and a second connecting portion in the second member, the second line pattern being the same pattern as the first line pattern and the second connecting portion being the same pattern as the first connecting portion; removing the second connecting portion of the second member; and etching the first member with the second member as a mask.

Abstract: The invention provides an absorbent article that can be easily worn. This absorbent article is an absorbent article that is worn by a user, comprising: a main body section of the absorbent article; and an absorbent body that has an absorbent member absorbing fluid, that has a longitudinal direction, a width direction, and a thickness direction, that is superposed on a face of the main body section on a user side, whose one end section in the longitudinal direction is joined to the main body section on a first joined section, and whose another end section in the longitudinal direction is joined to the main body section on a second joined section, wherein a length of the absorbent body between the first joined section and the second joined section is equal to or more than a length of the main body section between the first joined section and the second joined section.

Abstract: An absorbent article that is worn by a user, including: a main body section of the absorbent article; an absorbent body that includes an absorbent member absorbing liquid, that has a longitudinal direction, a width direction, and a thickness direction, that is superposed on a user side of the main body section, whose one end section of the longitudinal direction is joined to the main body section at a first joined section, and whose another end section of the longitudinal direction is joined to the main body section at a second joined section; and a restricting member that is disposed between the first joined section and the second joined section in the longitudinal direction, and that restricts relative shifting between the main body section and the absorbent body when the main body section and the absorbent body that are superposed are folded.

Abstract: To provide an absorbent article or the like including an absorbent body with a large absorption capacity and that is easy to place in the buttocks or the like.