Abstract: A cell observation container includes a first container configured to accommodate a culture solution, and a second container having one or more wells that are able to be put in and taken out of the first container while retaining one or both of cells and cell masses cultured in the culture solution. One or more wells each include a bottom portion that is able to retain the culture solution, and a side wall that extends from a peripheral portion of the bottom portion. A liquid passage portion through which the culture solution accommodated in the first container is able to pass is provided in the side wall.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a variable magnetization direction, a third magnetic layer having a fixed magnetization direction and a nonmagnetic layer, the first magnetic layer being provided between the second and third magnetic layers, and the nonmagnetic layer being provided between the first and third magnetic layers. The second magnetic layer has a superlattice structure in which first element layers and second element layers are alternately stacked. The first element is Co, and the second element is selected from Pt, Ni and Pd, and the second magnetic layer contains Cr as a third element.

Abstract: The present invention provides a heterocyclic compound having a HDAC6 inhibitory action, which is useful for the treatment of central nervous system diseases including neurodegenerative diseases, and the like, and a medicament comprising the compound. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line, a plurality of second wiring lines, a plurality of first memory cells each including a first magnetoresistance effect element and a first selector connected in series, and a first switch. A respective one of the first memory cells is connected between the first wiring line and a respective one of the second wiring lines, a first voltage is applied to the second wiring line connected to a selected first memory cell, and a second voltage is applied to the second wiring line connected to a non-selected first memory cell, a first terminal of the first switch is connected to the first wiring line, and a third voltage is applied to a second terminal of the first switch.

Abstract: A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.

Abstract: A non-aqueous electrolyte secondary battery of the present invention includes: a positive electrode in which an olivine-type compound is used as a positive electrode active material; a negative electrode in which amorphous-based carbon is used as a negative electrode active material; a separator sandwiched between the positive electrode and the negative electrode; a non-aqueous electrolyte; and a casing which houses the positive electrode, the negative electrode, the separator, and the non-aqueous electrolyte. The positive electrode, the negative electrode, and the non-aqueous electrolyte are configured to satisfy an inequality: (Rn/(Rp+Rn))?0.

Abstract: A switching element includes a first conductive layer, a second conductive layer, and a switching material layer provided between the first conductive layer and the second conductive layer and formed of an insulating material containing an additional element. The switching material layer includes a first interface region including a first interface between the first conductive layer and the switching material layer and a second interface region including a second interface between the second conductive layer and the switching material layer. A concentration of the additional element in the switching material layer has a first peak in the first interface region.

Abstract: The present invention provides a heterocyclic compound having a HDAC6 inhibitory action, which is useful for the treatment of central nervous system diseases including neurodegenerative diseases, and the like, and a medicament comprising the compound. The present invention relates to a compound represented by the formula (I) wherein each symbol is as defined in the description, or a salt thereof.

Abstract: According to one embodiment, a memory device includes a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a third memory cell adjacent to the first memory cell in a second direction, each of the first, second, and third memory cells including a resistance change memory element and a switching element. The switching element includes first and second electrodes, and a switching material layer between the first and second electrodes, the first and second electrodes overlap each other when viewed from the first direction, the first electrodes in the first and second memory cells are apart from each other, and the switching material layers in the first and second memory cells are continuously provided.

Abstract: The present invention provides a power storage device capable of preventing rain water, washing water, and the like from entering a casing. The power storage device of the present invention includes a secondary battery, the casing having a sealed structure, a safety valve, and a drainage through hole, the casing includes an external container configured to accommodate the secondary battery and an upper lid disposed above the external container, the upper lid has an upper surface having a concave portion formed therein, the safety valve is disposed in the concave portion, and the drainage through hole is provided to pass through a side wall of the concave portion.

Abstract: The present invention provides a heterocyclic compound having a HDAC6 inhibitory action, which is useful for the treatment of central nervous system diseases including neurodegenerative diseases, and the like, and a medicament comprising the compound. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.

Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.

Abstract: The present invention provides a heterocyclic compound having a HDAC inhibitory action, which is useful for the treatment of central nervous system diseases including neurodegenerative diseases, and the like, and a medicament comprising the compound. The present invention relates to a compound represented by the formula (I): wherein each symbol is as described in the description, or a salt thereof.

Abstract: A magnetic storage device includes a first stacked structure in which first electrode layers and first insulating layers are alternately stacked in a first direction, a first common electrode, and a first intermediate structure between the first stacked structure and the first common electrode and includes first element portions and first non-element portions that are alternately stacked in the first direction. Each of the first element portions includes a first magnetoresistance effect element that includes a first variable magnetization portion having a variable magnetization direction, a first fixed magnetization portion having a fixed magnetization direction, and a first tunnel barrier layer between the first variable magnetization portion and the first fixed magnetization portion. Each of the first non-element portions includes a first demagnetized portion adjacent to the first variable magnetization portion of one of the first element portions that is adjacent in the first direction.

Abstract: A lithium ion secondary battery includes: a positive electrode having a positive electrode active material layer on a surface of a positive electrode collector; a negative electrode a having a negative electrode active material layer on a surface of a negative electrode collector; and a nonaqueous electrolyte. The positive electrode, the negative electrode, and the nonaqueous electrolyte are accommodated in a battery case. The nonaqueous electrolyte contains ?-butyrolactone as a main component of a nonaqueous solvent. A monoalkyl sulfate ion-derived coat is formed on the surface of the positive electrode active material layer. A VC-derived coat is formed on the surface of the negative electrode active material layer.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a variable magnetization direction, a third magnetic layer having a fixed magnetization direction and a nonmagnetic layer, the first magnetic layer being provided between the second and third magnetic layers, and the nonmagnetic layer being provided between the first and third magnetic layers. The second magnetic layer has a superlattice structure in which first element layers and second element layers are alternately stacked. The first element is Co, and the second element is selected from Pt, Ni and Pd, and the second magnetic layer contains Cr as a third element.

Abstract: The present invention provides a compound having an MAGL inhibitory action, and expected to be useful as an agent for the prophylaxis or treatment of neurodegenerative diseases (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis etc.), anxiety disorder, pains (e.g., inflammatory pain, cancerous pain, neurogenic pain etc.), epilepsy, depression and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.

Abstract: The present invention provides a compound having an MAGL inhibitory action, and expected to be useful as an agent for the prophylaxis or treatment of neurodegenerative diseases (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis etc.), anxiety disorder, pains (e.g., inflammatory pain, cancerous pain, neurogenic pain etc.), epilepsy, depression and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.

Abstract: According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.

Abstract: The present invention relates to a compound represented by the formula wherein ring A is a nitrogen-containing heterocycle; ring B is an aromatic ring optionally having substituent(s); ring D is an aromatic ring optionally having substituent(s); L is a group represented by the formula R2, R3, R4a ? and R4b are each independently a hydrogen atom, an optionally halogenated C1-6 alkyl group or an optionally halogenated C3-6 cycloalkyl group, or R2 and R3 are optionally bonded via an alkylene chain or an alkenylene chain, or R4a and R4b are optionally bonded via an alkylene chain or an alkenylene chain; R1 is a hydrogen atom or a substituent; m and n are each independently an integer of 0 to 5; m+n is an integer of 2 to 5; and is a single bond or double bond, or a salt thereof; and the like.